{"598624":{"#nid":"598624","#data":{"type":"news","title":"Transfer Technique Produces Wearable Gallium Nitride Gas Sensors","body":[{"value":"\u003Cp\u003EA transfer technique based on thin sacrificial layers of boron nitride could allow high-performance gallium nitride gas sensors to be grown on sapphire substrates and then transferred to metallic or flexible polymer support materials. The technique could facilitate the production of low-cost wearable, mobile and disposable sensing devices for a wide range of environmental applications.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ETransferring the gallium nitride sensors to metallic foils and flexible polymers doubles their sensitivity to nitrogen dioxide gas, and boosts response time by a factor of six. The simple production steps, based on metal organic vapor phase epitaxy (MOVPE), could also lower the cost of producing the sensors and other optoelectronic devices.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ESensors produced with the new process can detect ammonia at parts-per-billion levels and differentiate between nitrogen-containing gases. The gas sensor fabrication technique was reported November 9 in the journal \u003Cem\u003EScientific Reports\u003C\/em\u003E.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026ldquo;Mechanically, we just peel the devices off the substrate, like peeling the layers of an onion,\u0026rdquo; explained \u003Ca href=\u0022https:\/\/www.ece.gatech.edu\/faculty-staff-directory\/abdallah-ougazzaden\u0022\u003EAbdallah Ougazzaden\u003C\/a\u003E, director of Georgia Tech Lorraine in Metz, France and a professor in Georgia Tech\u0026rsquo;s \u003Ca href=\u0022http:\/\/www.ece.gatech.edu\u0022\u003ESchool of Electrical and Computer Engineering\u003C\/a\u003E (ECE). \u0026ldquo;We can put the layer on another support that could be flexible, metallic or plastic. This technique really opens up a lot of opportunity for new functionality, new devices \u0026ndash; and commercializing them.\u0026rdquo;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe researchers begin the process by growing monolayers of boron nitride on two-inch sapphire wafers using an MOVPE process at approximately 1,300 degrees Celsius. The boron nitride surface coating is only a few nanometers thick, and produces crystalline structures that have strong planar surface connections, but weak vertical connections.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EAluminum gallium nitride (AlGaN\/GaN) devices are then grown atop the monolayers at a temperature of about 1,100 degrees Celsius, also using an MOVPE process. Because of the boron nitride crystalline properties, the devices are attached to the substrate only by weak Van der Waals forces, which can be overcome mechanically. The devices can be transferred to other substrates without inducing cracks or other defects. The sapphire wafers can be reused for additional device growth.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026ldquo;This approach for engineering GaN-based sensors is a key step in the pathway towards economically viable, flexible sensors with improved performances that could be integrated into wearable applications,\u0026rdquo; the authors wrote in their paper.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ESo far, the researchers have transferred the sensors to copper foil, aluminum foil and polymeric materials. In operation, the devices can differentiate between nitrogen oxide, nitrogen dioxide, and ammonia. Because the devices are approximately 100 by 100 microns, sensors for multiple gases can be produced on a single integrated device.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026ldquo;Not only can we differentiate between these gases, but because the sensor is very small, we can detect them all at the same time with an array of sensors,\u0026rdquo; said Ougazzaden, who expects that the devices could be modified to also detect ozone, carbon dioxide and other gases.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe gallium nitride sensors could have a wide range of applications from industry to vehicle engines \u0026ndash; and for wearable sensing devices. The devices are attractive because of their advantageous materials properties, which include high thermal and chemical stability.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026ldquo;The devices are small and flexible, which will allow us to put them onto many different types of support,\u0026rdquo; said Ougazzaden, who also directs the International Joint Research Lab at Georgia Tech CNRS.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ETo assess the effects of transferring the devices to a different substrate, the researchers measured device performance on the original sapphire wafer and compared that to performance on the new metallic and polymer substrates. They were surprised to see a doubling of the sensor sensitivity and a six-fold increase in response time, changes beyond what could be expected by a simple thermal change in the devices.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026ldquo;Not only can we have flexibility in the substrate, but we can also improve the performance of the devices just by moving them to a different support with appropriate properties,\u0026rdquo; he said. \u0026ldquo;Properties of the substrate alone makes the different in the performance.\u0026rdquo;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EIn future work, the researchers hope to boost the quality of the devices and demonstrate other sensing applications. \u0026ldquo;One of the challenges ahead is to improve the quality of the materials so we can extend this to other applications that are very sensitive to the substrates, such as high-performance electronics.\u0026rdquo;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe Georgia Tech researchers have previously used a similar technique to produce light-emitting diodes and ultraviolet detectors that were transferred to different substrates, and they believe the process could also be used to produce high-power electronics. For those applications, transferring the devices from sapphire to substrates with better thermal conductivity could provide a significant advantage in device operation.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EOugazzaden and his research team have been working on boron-based semiconductors since 2005. Their work has attracted visits from several industrial companies interested in exploring the technology, he said.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026ldquo;I am very excited and lucky to work on such hot topic and top-notch technology at GT-Lorraine,\u0026rdquo; said Taha Ayari, a Ph.D. student in the Georgia Tech School of ECE and the paper\u0026rsquo;s first author.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EIn addition to Ougazzaden, the research team includes Georgia Tech Ph.D. students Taha Ayari, Matthew Jordan, Xin Li and Saiful Alam; Chris Bishop and Youssef ElGmili, researchers at Institut Lafayette; Suresh Sundaram, a researcher at Georgia Tech Lorraine; Gilles Patriarche, a researcher at the Centre de Nanosciences et de Nanotechnologies (C2N) at CNRS; Paul Voss, an associate professor in the Georgia Tech School of ECE; and Jean Paul Salvestrini, a professor at Georgia Tech Lorraine and adjunct professor in the Georgia Tech School of ECE.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe research was supported by ANR (Agence Nationale de Recherche), the National Agency of Research in France through the \u0026ldquo;GANEX\u0026rdquo; Project.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003ECITATION\u003C\/strong\u003E: Taha Ayari, et al., \u0026ldquo;Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications,\u0026rdquo; (Scientific Reports, 2017). http:\/\/dx.doi.org\/10.1038\/s41598-017-15065-6\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EResearch News\u003Cbr \/\u003E\r\nGeorgia Institute of Technology\u003Cbr \/\u003E\r\n177 North Avenue\u003Cbr \/\u003E\r\nAtlanta, Georgia\u0026nbsp; 30332-0181\u0026nbsp; USA\u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EMedia Relations Contacts\u003C\/strong\u003E: John Toon (404-894-6986) (jtoon@gatech.edu).\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EWriter\u003C\/strong\u003E: John Toon\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026nbsp;\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EA transfer technique based on thin sacrificial layers of boron nitride could allow high-performance gallium nitride gas sensors to be grown on sapphire substrates and then transferred to metallic or flexible polymer support materials. The technique could facilitate the production of low-cost wearable, mobile and disposable sensing devices for a wide range of environmental applications.\u003C\/p\u003E\r\n","format":"limited_html"}],"field_summary_sentence":[{"value":"A new technique allows gallium nitride gas sensors to be grown on a standard substrate and then transferred to a different support."}],"uid":"27303","created_gmt":"2017-11-09 19:35:37","changed_gmt":"2017-11-09 19:49:47","author":"John Toon","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2017-11-09T00:00:00-05:00","iso_date":"2017-11-09T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"598619":{"id":"598619","type":"image","title":"Studying samples","body":null,"created":"1510255636","gmt_created":"2017-11-09 19:27:16","changed":"1510255636","gmt_changed":"2017-11-09 19:27:16","alt":"Studying samples","file":{"fid":"228210","name":"gas-sensor028.jpg","image_path":"\/sites\/default\/files\/images\/gas-sensor028.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/gas-sensor028.jpg","mime":"image\/jpeg","size":1407107,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/gas-sensor028.jpg?itok=C0ACT1Ps"}},"598621":{"id":"598621","type":"image","title":"Testing AlGaN\/GaN sensors","body":null,"created":"1510255755","gmt_created":"2017-11-09 19:29:15","changed":"1510255755","gmt_changed":"2017-11-09 19:29:15","alt":"Testing gas sensors","file":{"fid":"228211","name":"gas-sensor-probes.jpg","image_path":"\/sites\/default\/files\/images\/gas-sensor-probes.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/gas-sensor-probes.jpg","mime":"image\/jpeg","size":251107,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/gas-sensor-probes.jpg?itok=HQFigzSb"}}},"media_ids":["598619","598621"],"groups":[{"id":"1188","name":"Research Horizons"}],"categories":[{"id":"135","name":"Research"},{"id":"141","name":"Chemistry and Chemical Engineering"}],"keywords":[{"id":"167066","name":"sensors"},{"id":"173500","name":"Gallium nitride"},{"id":"4017","name":"transfer"},{"id":"176224","name":"boron nitride"},{"id":"176225","name":"gas sensor"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[{"id":"71881","name":"Science and Technology"}],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EJohn Toon\u003C\/p\u003E\r\n\r\n\u003Cp\u003EResearch News\u003C\/p\u003E\r\n\r\n\u003Cp\u003E(404) 894-6986\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["jtoon@gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"669507":{"#nid":"669507","#data":{"type":"news","title":"Claire Berger Receives one of France\u2019s Highest Civilian Honors in Science, Scientific Diplomacy","body":[{"value":"\u003Cp\u003E\u003Ca href=\u0022https:\/\/physics.gatech.edu\/user\/claire-berger\u0022\u003EClaire Berger\u003C\/a\u003E is a professor of the practice in the \u003Ca href=\u0022https:\/\/physics.gatech.edu\/\u0022\u003ESchool of Physics\u003C\/a\u003E, a research pioneer who has helped to establish deeper collaboration between the U.S. and French scientific communities, and now, she\u2019s the latest recipient of one of the oldest and highest honors from the French government.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe \u003Ca href=\u0022https:\/\/atlanta.consulfrance.org\/-english-\u0022\u003EConsulate General of France in Atlanta\u003C\/a\u003E has announced that Berger has been awarded the \u003Ca href=\u0022https:\/\/amopa.asso.fr\/lordre-des-palmes-academiques\/\u0022\u003EChevalier dans L\u0027Ordre des Palmes Acad\u00e9miques\u003C\/a\u003E for her \u201cexceptional dedication and significant accomplishments in the field of science and education,\u201d says \u003Ca href=\u0022https:\/\/atlanta.consulfrance.org\/the-consulate-general-welcomes-its-new-attache-for-science-and-technology\u0022\u003ERami Abi Akl\u003C\/a\u003E, French attach\u00e9 for science and technology in Atlanta.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe Palmes Acad\u00e9miques is presented to French citizens and non-citizens who have made significant contributions to French education, science, and culture. The first Palmes Acad\u00e9miques was presented by Napoleon in 1808.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EBerger\u2019s \u201cpioneering work in physics, particularly on graphene, has not only advanced scientific knowledge, but also served as an inspiration to others in her field,\u201d Abi Akl says.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EIn addition to her research and classes at Georgia Tech, Berger is Director of Research at the \u003Ca href=\u0022https:\/\/www.cnrs.fr\/en\/cnrs\u0022\u003EFrench National Center for Scientific Research (CNRS)\u003C\/a\u003E, which has been home to 12 Nobel Prize and 10 Fields Medal winners. Berger\u2019s affiliation is with the CNRS International Research Lab, with its main campus at \u003Ca href=\u0022https:\/\/europe.gatech.edu\/en\/campuses\/metz\u0022\u003EGeorgia Tech-Europe\u003C\/a\u003E in Metz, France, and an affiliated lab at Georgia Tech\u2019s Atlanta campus.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EApproximately 50 colleagues from both countries have conducted collaborative research at both Georgia Tech campuses, thanks to Berger\u2019s efforts.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u201cHer selection for this honor also reflects her remarkable impact on both the American and French scientific communities,\u201d Abi Akl says. \u201cHer collaborative efforts and contributions to scientific research have fostered strong ties between France and the United States, strengthening the bonds of scientific diplomacy.\u201d\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u201cA very big thank you to the French General Consulate in Atlanta for submitting my name for this distinctive honor,\u201d Berger recently shared.  \u201cAmong other funding agencies and foundations, I am particularly grateful to the French Embassy for their partnership grants that funded travel and helped collaboration between almost 60 faculty members, postdoctoral scholars, and students.\u201d\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u201cI also want to thank Georgia Tech and the School of Physics for their full support,\u201d she added. \u201cAll that travel and dedicated lab work wouldn\u2019t have happened without the love and support at home from my husband and our three sons.\u201d\u003C\/p\u003E\r\n\r\n\u003Ch4\u003EAbout Claire Berger\u003C\/h4\u003E\r\n\r\n\u003Cp\u003EBerger was born in Paris, France, and received her Ph.D. from the Universit\u00e9 Grenoble Alpes. She joined Georgia Tech in 2001, and she quickly established herself as a noted researcher of the electronic properties of graphene, a material with a flat, two-dimensional structure that is touted as a potential successor to silicon in computer processors.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EBerger and School of Physics Regents\u2019 Professor \u003Ca href=\u0022https:\/\/physics.gatech.edu\/user\/walter-de-heer\u0022\u003EWalter de Heer\u003C\/a\u003E are working on graphene discoveries that could lead to smaller, more energy-efficient processing that is expected to usher in a new era of quantum and high performance computing.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EWalter de Heer welcomed Berger into his lab when she arrived at Georgia Tech, she says. \u201cI want to thank him for being an incredible team leader in this adventure, for his continuous support, his insights, dedication and passion for science.\u201d\u003C\/p\u003E\r\n\r\n\u003Cp\u003EBerger co-authored the first article demonstrating the two-dimensional properties of graphene and a possible electronics platform for the material. Berger, de Heer, and School of Physics Professor \u003Ca href=\u0022https:\/\/physics.gatech.edu\/user\/phillip-first\u0022\u003EPhillip First\u003C\/a\u003E also co-authored the first patent for graphene electronics in 2003.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EShe is the co-author of more than 200 publications in international journals. From 2014 to 2019, she was among the top one percent \u003Ca href=\u0022https:\/\/cos.gatech.edu\/news\/georgia-tech-researchers-2018-highly-cited-researchers-list\u0022\u003Emost cited researchers\u003C\/a\u003E in physics.\u003C\/p\u003E\r\n\r\n\u003Ch4\u003EIn good company with another Atlanta Palmes winner\u003C\/h4\u003E\r\n\r\n\u003Cp\u003EBerger says she was given the letter by the General Consul of Atlanta announcing her award during an event at the Embassy. \u201cI was so surprised by the nomination that I was fumbling trying to find my words. This was a great \u2014 and a bit embarrassing \u2014 moment at the same time.\u201d\u003C\/p\u003E\r\n\r\n\u003Cp\u003EOne of her good friends, \u003Ca href=\u0022https:\/\/www.linkedin.com\/in\/bill-moon-95724a57\u0022\u003EBill Moon\u003C\/a\u003E, is a fellow Palmes Acad\u00e9miques winner for promoting French language instruction at private and public schools in Atlanta and Decatur. \u201cHe founded the \u003Ca href=\u0022https:\/\/icsgeorgia.org\/\u0022\u003EInternational Community School\u003C\/a\u003E in Clarkston, Georgia, a public charter elementary school serving the needs of U.S. and refugee families now living in DeKalb County, and he continues to be active in the service of communities,\u201d Berger says. \u201cTo be awarded the same medal as Bill is an incredible honor.\u201d\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003C\/p\u003E\r\n","summary":"","format":"limited_html"}],"field_subtitle":[{"value":"Physicist Claire Berger has been awarded the Chevalier dans L\u0027ordre des Palmes Acad\u00e9miques for her groundbreaking graphene research \u2014 and her work on strengthening ties between U.S. and French scientists."}],"field_summary":[{"value":"\u003Cp\u003EPhysicist Claire Berger has been awarded the Chevalier dans L\u0027ordre des Palmes Acad\u00e9miques for her groundbreaking graphene research \u2014 and her work on strengthening ties between U.S. and French scientists.\u003C\/p\u003E\r\n","format":"limited_html"}],"field_summary_sentence":[{"value":"Physicist Claire Berger has been awarded the Chevalier dans L\u0027ordre des Palmes Acad\u00e9miques for her groundbreaking graphene research \u2014 and her work on strengthening ties between U.S. and French scientists."}],"uid":"34434","created_gmt":"2023-09-07 14:12:56","changed_gmt":"2023-09-22 16:17:27","author":"Renay San Miguel","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2023-09-19T00:00:00-04:00","iso_date":"2023-09-19T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"671634":{"id":"671634","type":"image","title":"Claire Berger headshot.jpg","body":"\u003Cp\u003EClaire Berger\u003C\/p\u003E\r\n","created":"1694106640","gmt_created":"2023-09-07 17:10:40","changed":"1694106640","gmt_changed":"2023-09-07 17:10:40","alt":"Claire Berger","file":{"fid":"254734","name":"Claire Berger 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Hunt-Ralston)","file":{"fid":"254852","name":"Walter de Heer and Claire Berger with a model of how computer chip material is made (Photo Jess Hunt-Ralston).jpg","image_path":"\/sites\/default\/files\/2023\/09\/19\/Walter%20de%20Heer%20and%20Claire%20Berger%20with%20a%20model%20of%20how%20computer%20chip%20material%20is%20made%20%28Photo%20Jess%20Hunt-Ralston%29.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/2023\/09\/19\/Walter%20de%20Heer%20and%20Claire%20Berger%20with%20a%20model%20of%20how%20computer%20chip%20material%20is%20made%20%28Photo%20Jess%20Hunt-Ralston%29.jpg","mime":"image\/jpeg","size":8019542,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/2023\/09\/19\/Walter%20de%20Heer%20and%20Claire%20Berger%20with%20a%20model%20of%20how%20computer%20chip%20material%20is%20made%20%28Photo%20Jess%20Hunt-Ralston%29.jpg?itok=qs__L0wI"}},"671743":{"id":"671743","type":"image","title":"Chevalier dans 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Researchers List"},{"url":"https:\/\/cos.gatech.edu\/hg\/item\/599807","title":"Georgia Tech Faculty in 2017 Highly Cited Researchers List"}],"groups":[{"id":"1278","name":"College of Sciences"},{"id":"126011","name":"School of Physics"}],"categories":[{"id":"130","name":"Alumni"},{"id":"150","name":"Physics and Physical Sciences"},{"id":"135","name":"Research"},{"id":"134","name":"Student and Faculty"}],"keywords":[{"id":"4896","name":"College of Sciences"},{"id":"166937","name":"School of Physics"},{"id":"176495","name":"Claire Berger"},{"id":"176502","name":"Walter de Heer"},{"id":"193025","name":"Chevalier dans L\u0027Ordre des Palmes Acad\u00e9miques"},{"id":"429","name":"graphene"},{"id":"75301","name":"French Embassy"},{"id":"193026","name":"French National Center for Scientific Research"},{"id":"192249","name":"cos-community"},{"id":"192251","name":"cos-quantum"}],"core_research_areas":[{"id":"39471","name":"Materials"},{"id":"39501","name":"People and Technology"}],"news_room_topics":[{"id":"71881","name":"Science and Technology"}],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EWriter: Renay San Miguel\u003Cbr \/\u003E\r\nCommunications Officer II\/Science Writer\u003Cbr \/\u003E\r\nCollege of Sciences\u003Cbr \/\u003E\r\n404-894-5209\u003C\/p\u003E\r\n\r\n\u003Cp\u003EEditor: Jess Hunt-Ralston\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026nbsp;\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["renay.san@cos.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"671133":{"#nid":"671133","#data":{"type":"news","title":"Vice Provost Kippelen Honored with Prestigious French National Order of Merit ","body":[{"value":"\u003Cp\u003EBernard Kippelen, a professor in the \u003Ca href=\u0022https:\/\/ece.gatech.edu\/\u0022\u003EGeorgia Tech\u0026nbsp;School of Electrical and Computer Engineering\u003C\/a\u003E, has been honored with the title of Knight of the French National Order of Merit (Chevalier de l\u0027Ordre National du M\u00e9rite), acknowledging his outstanding commitment to enhancing Franco-American scientific and academic ties. The recognition extends to his contributions to the France-Atlanta series of events and the profound influence of his research.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Ca href=\u0022https:\/\/provost.gatech.edu\/leadership\/bernard-kippelen\u0022 rel=\u0022noreferrer noopener\u0022 target=\u0022_blank\u0022 title=\u0022https:\/\/provost.gatech.edu\/leadership\/bernard-kippelen\u0022\u003EKippelen\u003C\/a\u003E, the current vice provost for\u0026nbsp;\u003Ca href=\u0022https:\/\/global.gatech.edu\/\u0022 rel=\u0022noreferrer noopener\u0022 target=\u0022_blank\u0022 title=\u0022https:\/\/global.gatech.edu\/\u0022\u003EInternational Initiatives\u003C\/a\u003E\u0026nbsp;and the Steven A. Denning Chair for Global Engagement, received the award in a ceremony at the Residence of France in Atlanta on November 6, 2023.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe President of the French Republic had previously conferred the honor upon this year\u2019s civilian recipients on June 2, 2023. The National Order of Merit is the second national Order of France after the Legion of Honor. Its purpose is to, \u201creward \u2018distinguished merit\u2019 and encourage the lifeblood of the country.\u201d\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u201cOn behalf of the Georgia Tech community, I extend my heartfelt congratulations to Bernard, a true science diplomat, who has made extraordinary contributions to research and to strengthening ties between the United States and France\u201d said Georgia Tech President \u003Ca href=\u0022https:\/\/president.gatech.edu\/about\/biography\u0022 rel=\u0022noreferrer noopener\u0022 target=\u0022_blank\u0022\u003E\u00c1ngel Cabrera\u003C\/a\u003E. \u201cGeorgia Tech is indebted to him for all he has done and continues to do to enhance our reach, reputation, and impact on the global stage.\u0022\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDuring the award ceremony, \u003Ca href=\u0022https:\/\/www.scheller.gatech.edu\/directory\/faculty\/mcintyre\/index.html\u0022 rel=\u0022noreferrer noopener\u0022 target=\u0022_blank\u0022\u003EJohn McIntyre\u003C\/a\u003E, the founding executive director of the \u003Ca href=\u0022https:\/\/www.scheller.gatech.edu\/centers-and-initiatives\/center-for-international-business-edu-and-research\/index.html\u0022 rel=\u0022noreferrer noopener\u0022 target=\u0022_blank\u0022\u003EGeorgia Tech Center for International Business Education and Research\u003C\/a\u003E (CIBER), bestowed the medal upon Kippelen. President Cabrera and Anne-Laure Desjonqu\u00e8res, the consul general at Consulate of France in Atlanta, were joined by Kippelen\u0027s family, friends, and colleagues at the ceremony.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u201cProfessor Kippelen has been instrumental in fostering collaborations and partnerships and facilitating researcher and student mobility between France and the Southeast,\u201d said Desjonqu\u00e8res. \u201cThe French consulate is profoundly grateful to Bernard Kippelen for his invaluable support to our annual series of events France-Atlanta, as well as to our exchange and mobility programs.\u201d\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EKippelen joins \u003Ca href=\u0022https:\/\/provost.gatech.edu\/news\/yves-berthelot-vice-provost-international-initiatives-retire\u0022 rel=\u0022noreferrer noopener\u0022 target=\u0022_blank\u0022\u003EYves Berthelot\u003C\/a\u003E (vice provost for International Initiatives, retd.), \u003Ca href=\u0022https:\/\/development.gatech.edu\/who\/international\u0022 rel=\u0022noreferrer noopener\u0022 target=\u0022_blank\u0022\u003EMarta H. Garcia\u003C\/a\u003E (associate vice president for Development), and \u003Ca href=\u0022https:\/\/ece.gatech.edu\/directory\/steven-w-mclaughlin\u0022 rel=\u0022noreferrer noopener\u0022 target=\u0022_blank\u0022\u003ESteve McLaughlin\u003C\/a\u003E (provost and executive vice president for Academic Affairs) as fellow Georgia Tech recipients of the Knight of the French National Order of Merit distinction.\u202f\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EIn 2003, Bernard joined the Georgia Tech faculty and served as director of the\u202f\u003Ca href=\u0022https:\/\/cope.gatech.edu\/\u0022 rel=\u0022noreferrer noopener\u0022 target=\u0022_blank\u0022\u003ECenter for Organic Photonics and Electronics\u003C\/a\u003E (COPE) from 2011-2019.\u0026nbsp;He is a co-founder and co-president of the\u202f\u003Ca href=\u0022https:\/\/kippelengroup.gatech.edu\/institut-lafayette\/\u0022 rel=\u0022noreferrer noopener\u0022 target=\u0022_blank\u0022\u003EInstitut Lafayette\u003C\/a\u003E, an innovation platform located at \u003Ca href=\u0022https:\/\/europe.gatech.edu\/en\u0022 rel=\u0022noreferrer noopener\u0022 target=\u0022_blank\u0022\u003EGeorgia Tech-Europe\u003C\/a\u003E in Metz, France.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EWhile at Georgia Tech, he has worked with the\u202fOffice for Science and Technology (OST) of the Embassy of France to support the Technology Venture Accelerator (NETVA) program established to develop technological partnerships in the United States for young and innovative French startups.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EKippelen was raised in Soultz, Alsace, France, and is a U.S. and French citizen. He studied at the University Louis Pasteur in Strasbourg, France (Ph.D. 1990) and was a member of the\u202fCentre National de la Recherche Scientifique\u202f(CNRS). Before joining Georgia Tech, he was on the faculty of the Optical Sciences Center at the University of Arizona.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp lang=\u0022EN-US\u0022\u003E\u003Cem\u003E\u2014\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp lang=\u0022EN-US\u0022\u003E\u003Cem\u003ETop photo caption:\u003C\/em\u003E\u003Cbr \/\u003E\r\nBernard Kippelen receiving the Knight of the French National Order of Merit on Nov. 6, 2023 at the Residence of France in Atlanta. In the photo are (L-R): Yves Berthelot, Beth Cabrera, \u00c1ngel Cabrera, Virginie Kippelen,\u0026nbsp;Bernard Kippelen, Steve McLaughlin, Marta H. Garcia, John McIntyre, and Anne-Laure Desjonqu\u00e8res.\u0026nbsp;\u003C\/p\u003E\r\n","summary":"","format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EThe recognition, bestowed by the President of the French Republic, recognizes Bernard Kippelen\u0027s dedication to fostering research and academic collaboration between France and America.\u0026nbsp;\u003C\/p\u003E\r\n","format":"limited_html"}],"field_summary_sentence":[{"value":"The recognition, bestowed by the President of the French Republic, recognizes Bernard Kippelen\u0027s dedication to fostering research and academic collaboration between France and America. "}],"uid":"36172","created_gmt":"2023-11-17 01:45:08","changed_gmt":"2023-11-20 01:35:54","author":"dwatson71","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2023-11-16T00:00:00-05:00","iso_date":"2023-11-16T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"672404":{"id":"672404","type":"image","title":"Kippelen_Order of Merit.jpg","body":"\u003Cp lang=\u0022EN-US\u0022\u003EBernard Kippelen receiving the Knight of the French National Order of Merit on Nov. 6, 2023 at the Residence of France in Atlanta. In the photo are (L-R): Yves Berthelot, Beth Cabrera, \u00c1ngel Cabrera, Virginie Kippelen,\u0026nbsp;Bernard Kippelen, Steve McLaughlin, Marta H. Garcia, John McIntyre, and Anne-Laure Desjonqu\u00e8res.\u0026nbsp;\u003C\/p\u003E\r\n","created":"1700185620","gmt_created":"2023-11-17 01:47:00","changed":"1700185620","gmt_changed":"2023-11-17 01:47:00","alt":"Bernard Kippelen group photo receiving the Knight of the French National Order of Merit ","file":{"fid":"255635","name":"Kippelen_Order of Merit.jpg","image_path":"\/sites\/default\/files\/2023\/11\/16\/Kippelen_Order%20of%20Merit.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/2023\/11\/16\/Kippelen_Order%20of%20Merit.jpg","mime":"image\/jpeg","size":1395037,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/2023\/11\/16\/Kippelen_Order%20of%20Merit.jpg?itok=B28op3iq"}}},"media_ids":["672404"],"groups":[{"id":"1255","name":"School of Electrical and Computer Engineering"}],"categories":[{"id":"42901","name":"Community"},{"id":"145","name":"Engineering"},{"id":"132","name":"Institute Leadership"},{"id":"135","name":"Research"}],"keywords":[{"id":"2431","name":"Bernard Kippelen"},{"id":"193271","name":"Knight of the French National Order of Merit"},{"id":"193272","name":"Chevalier de l\u0027Ordre National du M\u00e9rite"},{"id":"172533","name":"\u00c1ngel Cabrera"},{"id":"193273","name":"John McIntyre"},{"id":"193274","name":"Consulate of France in Atlanta"},{"id":"166855","name":"School of Electrical and Computer Engineering"},{"id":"10797","name":"center for organic photonics and electronics"}],"core_research_areas":[],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EDan Watson\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["dwatson@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}}}