Mr. Li’s research focuses on growing high-quality InAlGaN compound semiconductor material for high-performance ultraviolet optoelectronic devices such as laser diodes, light-emitting diodes, and detectors. These devices are fundamental for next-generation optical storage, water purification techniques, and bioagent detection. He grows materials by using an Aixtron Epilab Metal-organic Chemical Vapor Deposition (MOCVD) system, a state-of-the-art system that can grow materials at an ultrahigh temperature of up to 1,300 degrees celsius while obtaining a uniform temperature profile.

Mr. Li works in the Advanced Material and Device Group and is advised by Russell D. Dupuis, who is the Steve W. Chaddick Endowed Chair in Electro-Optics and a Georgia Research Alliance Eminent Scholar. Before coming to Tech, Mr. Li received the bachelor’s degree in Applied Physics from Huazhong University of Science and Technology and the M.S.E.E. degree from Lehigh University.

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