{"338771":{"#nid":"338771","#data":{"type":"news","title":"ME\u0027s Satish Kumar receives DARPA Young Investigator Award","body":[{"value":"\u003Cp\u003E\u003Ca href=\u0022https:\/\/www.me.gatech.edu\/faculty\/kumar\u0022 rel=\u0022nofollow\u0022 target=\u0022_blank\u0022\u003ESatish Kumar\u003C\/a\u003E, assistant professor in the George W. Woodruff School of Mechanical Engineering, has been awarded with the \u003Ca href=\u0022http:\/\/www.darpa.mil\/Opportunities\/Universities\/Young_Faculty.aspx\u0022 rel=\u0022nofollow\u0022 target=\u0022_blank\u0022\u003E2014\u0026nbsp;Defense Advanced Research Projects Agency (DARPA) Young Faculty Award (YFA)\u003C\/a\u003E. The objective of the DARPA YFA program is to identify and engage rising research stars in junior faculty positions at U.S. academic institutions and expose them to Department of Defense (DoD) needs as well as DARPA\u2019s program development process. The YFA program provides $500,000 funding, mentoring, and industry and DoD contacts to awardees early in their careers so they may develop their research ideas in the context of DoD needs.\u003C\/p\u003E\u003Cp\u003EKumar has been selected for YFA under the topic of Modeling Phonon Generation and Transport in the Near Junction Region of Wide-Bandgap Transistors. His project entitled \u201c\u003Cem\u003EElectron-Phonon Transport in High-Electron Mobility Transistors\u003C\/em\u003E\u201d will investigate hot spot formation and electron-phonon transport in GaN based High Electron Mobility Transistors (HEMTs). These transistors have the potential to operate in the frequency range of 100s of GHz. They are strong candidates for the future high power amplifiers due to the very highpower densities. HEMTs are promising for a wide range of applications in the next generation cellular base stations, advanced military radars, and solid state light sources. The proposed research will provide a robust computational framework which will enable fast and accurate analysis of energy transport in HEMTs and establish guidelines to reduce device temperature and enhance output power\/reliability.\u003Cbr \/\u003E\u003Ca href=\u0022http:\/\/www.coe.gatech.edu\/news\/mes-satish-kumar-receives-darpa-young-investigator-award\u0022\u003ERead more at this link.\u003C\/a\u003E\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"Satish Kumar, assistant professor in the George W. Woodruff School of Mechanical Engineering, has been awarded with the 2014 Defense Advanced Research Projects Agency (DARPA) Young Faculty Award (YFA)."}],"uid":"27863","created_gmt":"2014-10-31 11:33:36","changed_gmt":"2016-10-08 03:17:23","author":"Christa Ernst","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2014-10-31T00:00:00-04:00","iso_date":"2014-10-31T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"338761":{"id":"338761","type":"image","title":"Kumar DARPA Award","body":null,"created":"1449245216","gmt_created":"2015-12-04 16:06:56","changed":"1475895053","gmt_changed":"2016-10-08 02:50:53","alt":"Kumar DARPA Award","file":{"fid":"201909","name":"kumar_darpa_award_0.jpg","image_path":"\/sites\/default\/files\/images\/kumar_darpa_award_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/kumar_darpa_award_0.jpg","mime":"image\/jpeg","size":19389,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/kumar_darpa_award_0.jpg?itok=AQYOwG6w"}}},"media_ids":["338761"],"groups":[{"id":"197261","name":"Institute for Electronics and Nanotechnology"}],"categories":[{"id":"132","name":"Institute Leadership"},{"id":"145","name":"Engineering"},{"id":"147","name":"Military Technology"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"135","name":"Research"}],"keywords":[{"id":"79391","name":"DARPA Young Faculty Award"},{"id":"12701","name":"Institute for Electronics and Nanotechnology"},{"id":"166869","name":"Satish Kumar"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}}}