{"445921":{"#nid":"445921","#data":{"type":"news","title":"Semiconductor Research Corporation Expands Benchmarking Research Program to Evaluate New and Emerging Devices for Computing","body":[{"value":"\u003Cp\u003EMarking an industry first for emerging electronics devices, Semiconductor Research Corporation (SRC) today announced a significant expansion of its benchmarking research \u2014 a unique program that evaluates the relative capabilities of new and emerging computing devices.\u003C\/p\u003E\u003Cp\u003ESRC, the world\u2019s leading university-research consortium for semiconductor technologies, is managing the initiative through its Nanoelectronics Research Initiative (SRC-NRI) and STARnet Research programs. The research will be led by the Georgia Institute of Technology\u2019s Azad Naeemi, associate professor, Georgia Tech School of Electrical and Computer Engineering.\u003C\/p\u003E\u003Cp\u003E\u201cBenchmarking\u0026nbsp;guides university research funded\u0026nbsp;through SRC \u2014 enabling concise communication of research outcomes, focusing researchers\u0027 attention on key technical challenges and sparking invention,\u201d said Tom Theis, executive director of SRC-NRI. \u201cProfessor Naeemi\u0027s research is expected to take benchmarking of emerging devices to a new level of sophistication.\u201d\u003C\/p\u003E\u003Cp\u003EEvaluating the performance of devices in representative \u0022benchmark\u0022 circuits is a well-established engineering practice in the semiconductor industry. However, this new program is the first to develop a comparable methodology for evaluating the relative capabilities of emerging devices.\u003C\/p\u003E\u003Cp\u003EThese emerging devices include, for example, transistor-like \u201csteep slope\u201d devices that can operate at very low voltage and, therefore, very low power, and non-volatile magnetic devices that combine the functions of logic and memory. The new devices operate by a variety of principles fundamentally different from those governing the operation of established silicon field-effect transistor technology.\u003C\/p\u003E\u003Cp\u003EIn recent years, benchmarking of these devices has steadily increased in rigor. The Georgia Tech team \u2014 selected by a group of SRC member companies supporting the initiative including IBM, Intel Corporation, Micron Technology and Texas Instruments \u2014 will build on this foundation.\u003C\/p\u003E\u003Cp\u003E\u201cThis research will also enable selection of the most promising emerging devices for technology transfer to SRC member companies and for continued development in future SRC research programs,\u201d said Gilroy Vandentop, executive director of STARnet Research.\u003C\/p\u003E\u003Cp\u003EBesides maintaining and improving the established benchmarking methodology, the Georgia Tech team is tasked with developing and evaluating benchmark circuits to better understand the potential of new devices for memory arrays, to explore and quantify the value of non-volatility and to measure the impact of various ways of implementing device-to-device connections. Perhaps most challenging, Naeemi will lead the development of a rigorous benchmarking methodology for non-Boolean (analog) computational circuits being explored for future applications such as artificial neural networks.\u003C\/p\u003E\u003Cp\u003E\u201cOur team is chartered with maintaining and improving the established benchmarking methodology for emerging devices, evaluating the potential performance of the various SRC-NRI and STARnet devices in the established benchmark circuits,\u201d said Naeemi. \u201cWe will incorporate additional device concepts as they emerge through ongoing research, and we will develop additional benchmark circuits to better understand the capabilities of these devices.\u201d\u003C\/p\u003E\u003Cp\u003EThe SRC benchmark program is a two-and-a-half year effort that funds research from July 1, 2015 through the close of 2017. For more information on the program, visit \u003Ca href=\u0022https:\/\/www.src.org\/program\/nri\/benchmarking\/\u0022\u003Ehttps:\/\/www.src.org\/program\/nri\/benchmarking\/\u003C\/a\u003E. \u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003ECaption for Switching Energy versus Delay of a 32-Bit Adder:\u003C\/strong\u003E Benchmarking results: Assessment of energy versus delay of a 32-bit adder circuit if it were built with various devices being explored in the Semiconductor Research Corporation\u0027s NRI and STARnet programs (Source: Dimitri Nikonov and Ian Young from Intel Co.).\u003Cbr \/\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003ECaption for Smart Detector Cell:\u003C\/strong\u003E This circuit built from spintronic devices is being studied for possible addition to the established suite of SRC benchmark circuits (Source: H. Aghasi and R.M. Iraei from Cornell University and Georgia Tech).\u0026nbsp;\u0026nbsp; \u003Cbr \/\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cbr \/\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cbr \/\u003E\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":[{"value":"Georgia Tech Researchers to Lead Evaluations, Identify Most Promising Devices for Technology Transfer and Further Research"}],"field_summary":[{"value":"\u003Cp\u003EMarking an industry first for emerging electronics devices, Semiconductor Research Corporation (SRC) today announced a significant expansion of its benchmarking research \u2014 a unique program that evaluates the relative capabilities of new and emerging computing devices.\u003C\/p\u003E\u003Cp\u003ESRC, the world\u2019s leading university-research consortium for semiconductor technologies, is managing the initiative through its Nanoelectronics Research Initiative (SRC-NRI) and STARnet Research programs. The research will be led by the Georgia Institute of Technology\u2019s Azad Naeemi, an associate professor in the School of Electrical and Computer Engineering (ECE).\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"ECE Associate Professor Azad Naeemi will lead a new benchmarking program to evaluate new and emerging computing devices."}],"uid":"27241","created_gmt":"2015-09-09 13:34:38","changed_gmt":"2016-10-08 03:19:29","author":"Jackie Nemeth","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2015-09-09T00:00:00-04:00","iso_date":"2015-09-09T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"287271":{"id":"287271","type":"image","title":"Azad Naeemi","body":null,"created":"1449244254","gmt_created":"2015-12-04 15:50:54","changed":"1475894983","gmt_changed":"2016-10-08 02:49:43","alt":"Azad Naeemi","file":{"fid":"199126","name":"azadnaeemi131021br642_web.jpg","image_path":"\/sites\/default\/files\/images\/azadnaeemi131021br642_web_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/azadnaeemi131021br642_web_0.jpg","mime":"image\/jpeg","size":3063876,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/azadnaeemi131021br642_web_0.jpg?itok=lhRE64ZC"}},"445971":{"id":"445971","type":"image","title":"Switching Energy versus Delay of a 32-Bit Adder","body":null,"created":"1449256217","gmt_created":"2015-12-04 19:10:17","changed":"1475895187","gmt_changed":"2016-10-08 02:53:07","alt":"Switching Energy versus Delay of a 32-Bit Adder","file":{"fid":"203197","name":"slide1_4.jpg","image_path":"\/sites\/default\/files\/images\/slide1_4_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/slide1_4_0.jpg","mime":"image\/jpeg","size":88251,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/slide1_4_0.jpg?itok=2LLz5dxj"}},"445981":{"id":"445981","type":"image","title":"Smart Detector Cell: A Scalable All-Spin Circuit for Low Power Non-Boolean Pattern Recognition","body":null,"created":"1449256217","gmt_created":"2015-12-04 19:10:17","changed":"1475895187","gmt_changed":"2016-10-08 02:53:07","alt":"Smart Detector Cell: A Scalable All-Spin Circuit for Low Power Non-Boolean Pattern Recognition","file":{"fid":"203198","name":"slide2.jpg","image_path":"\/sites\/default\/files\/images\/slide2_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/slide2_0.jpg","mime":"image\/jpeg","size":102849,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/slide2_0.jpg?itok=nJykYbLh"}}},"media_ids":["287271","445971","445981"],"related_links":[{"url":"http:\/\/www.gatech.edu\/","title":"Georgia Tech"},{"url":"http:\/\/www.ece.gatech.edu\/","title":"School of Electrical and Computer Engineering"},{"url":"http:\/\/www.src.org\/","title":"Semiconductor Research Corporation"},{"url":"http:\/\/www.ece.gatech.edu\/faculty-staff\/fac_profiles\/bio.php?id=159","title":"Azad Naeemi"}],"groups":[{"id":"1255","name":"School of Electrical and Computer Engineering"}],"categories":[{"id":"130","name":"Alumni"},{"id":"134","name":"Student and Faculty"},{"id":"153","name":"Computer Science\/Information Technology and Security"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"135","name":"Research"},{"id":"150","name":"Physics and Physical Sciences"}],"keywords":[{"id":"5518","name":"Azad Naeemi"},{"id":"109","name":"Georgia Tech"},{"id":"140851","name":"Nanoelectronics Research Initiative"},{"id":"166855","name":"School of Electrical and Computer Engineering"},{"id":"166953","name":"Semiconductor Research Corporation"},{"id":"171476","name":"STARnet Research"}],"core_research_areas":[{"id":"39431","name":"Data Engineering and Science"},{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EDaniel Francisco\u003C\/p\u003E\u003Cp\u003EIntegrity Global (for SRC)\u003C\/p\u003E\u003Cp\u003E916-812-8814\u003C\/p\u003E\u003Cp\u003E\u003Ca href=\u0022mailto:dan@integrityglobal.biz\u0022\u003Edan@integrityglobal.biz\u003C\/a\u003E\u003C\/p\u003E","format":"limited_html"}],"email":["dan@integrityglobal.biz"],"slides":[],"orientation":[],"userdata":""}}}