{"668477":{"#nid":"668477","#data":{"type":"news","title":"Tentzeris Named Distinguished Lecturer by Electronic Packaging Society","body":[{"value":"\u003Cp\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Ca href=\u0022https:\/\/ece.gatech.edu\/directory\/emmanouil-m-tentzeris\u0022\u003EManos M. Tentzeris\u003C\/a\u003E, a professor at the \u003Ca href=\u0022https:\/\/ece.gatech.edu\/\u0022\u003EGeorgia Tech School of Electrical and Computer Engineering\u003C\/a\u003E, has been appointed as a Distinguished Lecturer by the \u003Ca href=\u0022https:\/\/eps.ieee.org\/\u0022\u003EIEEE Electronic Packaging Society\u003C\/a\u003E (EPS). The recognition is considered one of the highest honors within the society. \u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003EEPS \u003Ca href=\u0022https:\/\/eps.ieee.org\/education\/distinguished-lecturer-program.html\u0022\u003EDistinguished Lecturers\u003C\/a\u003E are selected from among EPS Fellows, award winners, and society leaders. Selected experts are highly regarded members of the technical community and renowned experts in their respective fields. They are invited to deliver lectures and courses at EPS events, including chapters, conferences, workshops, symposia, and IEEE Student Chapter events.\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003ENotably, Tentzeris has previously served as a Distinguished Lecturer for the \u003Ca href=\u0022https:\/\/mtt.org\/\u0022\u003EIEEE Microwave Theory and Technology Society\u003C\/a\u003E (MTT) and the \u003Ca href=\u0022https:\/\/www.ieee-rfid.org\/\u0022\u003EIEEE Council on Radio Frequency Identification\u003C\/a\u003E (CRFID), highlighting his exceptional contributions across multiple societies within IEEE (Institute of Electrical and Electronics Engineers).\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003ESince 2016, Tentzeris has held the Ken Byers Professorship in flexible electronics in ECE. He joined the faculty in 1998 and leads the ATHENA Research Group. Tentzeris\u2019 research specializes in 3D Printed RF electronics, antennas and modules, flexible and conformal electronics and phased antenna arrays up to sub-THz, origami and morphing electromagnetics, Highly Integrated\/Multilayer Packaging for RF and Wireless Applications using ceramic and organic flexible materials, \u201cgreen\u201d paper-based RFIDs and sensors, nanostructures for RF, wireless sensors, energy harvesting and wireless power transfer\/wireless power grids, reconfigurable intelligent metasurfaces, heterogeneous integration and SOP-integrated (UWB, multiband, conformal) antennas.\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003E\u003Cspan\u003EAs an EPS Distinguished Lecturer, Tentzeris will deliver lectures on Smart Cities, Smart Agriculture, Smart Manufacturing\/Industry 4.0, and Digital Twin domains.\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/span\u003E\u003C\/p\u003E\r\n","summary":"","format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EThe Distinguished Lecturer\u0026nbsp;recognition is considered one of the highest honors within the society.\u003C\/p\u003E\r\n","format":"limited_html"}],"field_summary_sentence":[{"value":"In recognition of his expertise in electronic packaging, Tentzeris will deliver distinguished lectures for IEEE EPS. "}],"uid":"36172","created_gmt":"2023-07-14 14:05:18","changed_gmt":"2023-07-26 12:41:19","author":"dwatson71","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2023-07-14T00:00:00-04:00","iso_date":"2023-07-14T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"671170":{"id":"671170","type":"image","title":"cropped_manostentzeris131018ar308_web.jpg","body":"\u003Cp\u003EManos M. Tentzeris, Ken Byers Professor in Flexible Electronics at the Georgia Tech School of Electrical and Computer Engineering\u003C\/p\u003E\r\n","created":"1689343678","gmt_created":"2023-07-14 14:07:58","changed":"1689343678","gmt_changed":"2023-07-14 14:07:58","alt":"Photo of Professor Manos M. Tentzeris","file":{"fid":"254184","name":"cropped_manostentzeris131018ar308_web.jpg","image_path":"\/sites\/default\/files\/2023\/07\/14\/cropped_manostentzeris131018ar308_web.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/2023\/07\/14\/cropped_manostentzeris131018ar308_web.jpg","mime":"image\/jpeg","size":820288,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/2023\/07\/14\/cropped_manostentzeris131018ar308_web.jpg?itok=6zq6h7PX"}}},"media_ids":["671170"],"groups":[{"id":"197261","name":"Institute for Electronics and Nanotechnology"}],"categories":[{"id":"42901","name":"Community"},{"id":"42911","name":"Education"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"135","name":"Research"}],"keywords":[{"id":"192847","name":"Manos M. Tentzeris"},{"id":"66891","name":"Georgia Tech School of Electrical and Computer Engineering"},{"id":"192848","name":"IEEE Electronic Packaging Society"},{"id":"192849","name":"IEEE Microwave Theory and Technology Society"},{"id":"192850","name":"IEEE Council on Radio Frequency Identification"},{"id":"5728","name":"Distinguished Lecturer"},{"id":"192851","name":"Ken Byers Professorship"},{"id":"12373","name":"flexible electronics"},{"id":"187433","name":"go-ien"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EDan Watson\u003Cbr \/\u003E\r\n\u0026nbsp;\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["dwatson@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"648667":{"#nid":"648667","#data":{"type":"news","title":"A Signal of Danger in Heart Disease","body":[{"value":"\u003Cp\u003EAccording to the Center for Disease Control and Prevention, heart disease and its effects is the leading cause of death in the U.S. across a majority of racial and ethnic groups. Globally, the risk factors for developing heart disease, such as obesity and diabetes have grown by huge margins, increasing the future impact of heart disease on society and medical infrastructures. As with many chronic, or long-term, health issues, the successful management of heart disease can greatly improve a patient\u0026rsquo;s lifespan and quality.\u003Cbr \/\u003E\r\n\u003Cbr \/\u003E\r\nThis successful management requires the collection of large datasets of the electrical signal of a patient\u0026rsquo;s heart gathered from long-term measurements using an electrocardiogram (ECG) device. In the past, ECG data was collected in controlled clinical settings, however the development of new electronic materials and internet-connected devices have allowed the ECG to become a portable, wearable and commercially available product. Although these products are a great benefit to the patient users, they are not without flaws. The everyday motions of a patient, from walking to brushing their teeth, can alter the ECG data. These false recordings, called motion artifacts (MAs), can make it difficult for clinicians to detect abnormal heart rhythms that may be the signal of the onset of a heart attack.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ECorrective solutions to the issue of MAs have, thus far, been either expensive to implement, such as filtering software, or cause discomfort to the wearer, such as tighter strap attachments and stronger, skin irritating adhesives. The team of W. Hong Yeo, Associate Professor in the George W. Woodruff School of Mechanical Engineering \u0026amp; PI of \u003Ca href=\u0022https:\/\/sites.google.com\/view\/yeogroup\u0022 target=\u0022_blank\u0022\u003Ethe Yeo Group\u003C\/a\u003E \u0026amp; Director of \u003Ca href=\u0022https:\/\/chcie.me.gatech.edu\/\u0022 target=\u0022_blank\u0022\u003ECenter for HCIE\u003C\/a\u003E, working with partners at the Korea Advanced Institute of Science and Technology and Emory University have designed a flexibly packaged wireless wearable ECG device using a new class of strain-isolating materials that reduces MAs, induced by movement in the skin\/sensor contact area.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe team\u0026rsquo;s new strain-isolated, wearable soft bioelectronic system (SIS) adheres naturally to the skin using a breathable soft membrane for continuous conformal contact. A pair of nanomembrane mesh electrodes and a thin-film circuit powered by rechargeable lithium-ion batteries are placed on a thin layer of silicone gel to allow a greater range of motion and packaged within a low modulus silicone elastomer. In testing the design against commercially available skin-mounted biosensors, the team\u0026rsquo;s new device provides real-time wireless data of multiple physiological signals with a significant reduction in MA interference. Additionally, and most importantly, the device trial participants exhibited no device lamination issues, excessive sweating, signal degradation, or increased skin irritation.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cbr \/\u003E\r\nYeo and his team are pleased with their results to-date but have plans to take the research even further. The team seeks an even smaller device footprint by integrating fan-out wafer-level packaging and developing all-printing fabrication methods. Additionally, the team is planning large-scale clinical studies in cardiology and pediatrics to monitor the health status of both inpatient and outpatient groups on a continuous basis.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003E- Christa M. Ernst\u003C\/strong\u003E\u003Cbr \/\u003E\r\n\u003Cbr \/\u003E\r\nRodeheaver, N., Herbert, R., Kim, Y.-S., Mahmood, M., Kim, H., Jeong, J.-W., Yeo, W.-H., Strain-Isolating Materials and Interfacial Physics for Soft Wearable Bioelectronics and Wireless, Motion Artifact-Controlled Health Monitoring. \u003Cem\u003EAdv. Funct. Mater.\u003C\/em\u003E 2021, 2104070. \u003Ca href=\u0022http:\/\/https:\/\/doi.org\/10.1002\/adfm.202104070\u0022 target=\u0022_blank\u0022\u003Ehttps:\/\/doi.org\/10.1002\/adfm.202104070\u003C\/a\u003E\u003Cbr \/\u003E\r\n\u0026nbsp;\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":[{"value":"Improving Patient Outcomes with Clearer Health Monitoring Data"}],"field_summary":"","field_summary_sentence":[{"value":"The team of W. Hong Yeo have designed a flexibly packaged wireless wearable ECG device using a new class of strain-isolating materials that reduces MAs, induced by movement in the skin\/sensor contact area."}],"uid":"27863","created_gmt":"2021-07-09 17:19:25","changed_gmt":"2021-07-09 17:19:54","author":"Christa Ernst","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2021-07-09T00:00:00-04:00","iso_date":"2021-07-09T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"648666":{"id":"648666","type":"image","title":"WH Yeo SIS Device","body":null,"created":"1625850878","gmt_created":"2021-07-09 17:14:38","changed":"1635275557","gmt_changed":"2021-10-26 19:12:37","alt":"Demonstration of a new strain-isolated, wearable soft bioelectronic system from the lab of W. Hong Yeo, Associate Professor in the George W. Woodruff School of Mechanical Engineering \u0026 PI of the Yeo Group \u0026 Director of Center for HCIE and partners at the Korea Advanced Institute of Science and Technology and Emory University. The new system reduces motion artifacts in wearable ECG and biosensors caused by patient movement. ","file":{"fid":"246237","name":"Yeo SIS Device.png","image_path":"\/sites\/default\/files\/images\/Yeo%20SIS%20Device.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/Yeo%20SIS%20Device.png","mime":"image\/png","size":711055,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Yeo%20SIS%20Device.png?itok=dCAXaaKX"}}},"media_ids":["648666"],"groups":[{"id":"198081","name":"Georgia Electronic Design Center (GEDC)"},{"id":"217141","name":"Georgia Tech Materials Institute"},{"id":"197261","name":"Institute for Electronics and Nanotechnology"},{"id":"142761","name":"IRIM"},{"id":"1271","name":"NanoTECH"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"134","name":"Student and Faculty"},{"id":"135","name":"Research"},{"id":"138","name":"Biotechnology, Health, Bioengineering, Genetics"},{"id":"145","name":"Engineering"},{"id":"146","name":"Life Sciences and Biology"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"152","name":"Robotics"}],"keywords":[{"id":"188087","name":"go-irim"},{"id":"186870","name":"go-imat"},{"id":"12701","name":"Institute for Electronics and Nanotechnology"},{"id":"167377","name":"School of Mechanical Engineering"},{"id":"187582","name":"go-ibb"},{"id":"12373","name":"flexible electronics"}],"core_research_areas":[{"id":"39441","name":"Bioengineering and Bioscience"},{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39521","name":"Robotics"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003Echrista.ernst@research.gatech.edu\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["christa.ernst@research.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"637647":{"#nid":"637647","#data":{"type":"news","title":"New Flexible Electronics Research Shows Promise for Spinal Therapies","body":[{"value":"\u003Cp\u003EPatients recovering from spinal cord injuries or who have mobility disorders related to spinal nerve compression are frequently treated by the conditioning of the Hoffmann\u0026rsquo;s reflex via non-surgical electrostimulation therapy. To track the progress of the treatment, electromyography (EMG) is used to record the amplitude of the patient\u0026rsquo;s muscle twitch response.\u003Cbr \/\u003E\r\n\u003Cbr \/\u003E\r\nAccurate EMG recording requires precise positioning of electrodes; thus, the existing systems have to use too many electrodes to cover the target skin. In addition, the current systems are relying on rigid and bulky metal electrodes, strong adhesives, and skin-irritable conductive gels. These system constraints increase error instances across sessions in experimentation, as well as requiring lengthy set-up times.\u003Cbr \/\u003E\r\n\u003Cbr \/\u003E\r\nTo address these issues, \u003Ca href=\u0022https:\/\/sites.google.com\/view\/yeogroup\/home\u0022 target=\u0022_blank\u0022\u003EThe Bio-Interfaced Translational Nanoengineering Group\u003C\/a\u003E, under the direction of Assistant Professor W. Hong Yeo, George W. Woodruff School of Mechanical Engineering and Wallace Coulter Department of Biomedical Engineering at Georgia Tech, have created a nanomembrane electrode EMG array for use on large epidermal areas that has the potential to reduce greatly these problems in critical therapeutics for rehabilitation.\u0026nbsp;\u003Cbr \/\u003E\r\n\u003Cbr \/\u003E\r\nThis new large-area epidermal electronic system (L-EES) provides greater patient comfort through enhanced skin-compatibility via a stretchable and breathable composite. For researchers and therapists, the system could provide a reliable recording of electromyographic muscle signal activities (M-waves and H-reflex) from patients that are comparable to those recorded using conventional EMG systems.\u003Cbr \/\u003E\r\n\u0026nbsp;\u003Cbr \/\u003E\r\n\u003Ca href=\u0022https:\/\/www.sciencedirect.com\/science\/article\/pii\/S0956566320303985#fig2\u0022\u003ERead the Research Here: Breathable, large-area epidermal electronic systems for recording electromyographic activity during operant conditioning of H-reflex\u003C\/a\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EMedia Relations Contact: Christa Ernst \u003C\/strong\u003E(christa.ernst@research.gatech.edu)\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"A nanomembrane electrode EMG array for use on large epidermal areas."}],"uid":"27863","created_gmt":"2020-08-07 18:57:32","changed_gmt":"2020-08-10 17:42:19","author":"Christa Ernst","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2020-08-07T00:00:00-04:00","iso_date":"2020-08-07T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"637646":{"id":"637646","type":"image","title":"L-EES W. H. Yeo Lab","body":null,"created":"1596826308","gmt_created":"2020-08-07 18:51:48","changed":"1596826308","gmt_changed":"2020-08-07 18:51:48","alt":"Photo of a fabricated L-EES, gently placed on the skin (forearm)","file":{"fid":"242533","name":"Yeo Mercury Image L-EES.png","image_path":"\/sites\/default\/files\/images\/Yeo%20Mercury%20Image%20L-EES.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/Yeo%20Mercury%20Image%20L-EES.png","mime":"image\/png","size":407333,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Yeo%20Mercury%20Image%20L-EES.png?itok=Da-Rakrz"}}},"media_ids":["637646"],"groups":[{"id":"213791","name":"3D Systems Packaging Research Center"},{"id":"198081","name":"Georgia Electronic Design Center (GEDC)"},{"id":"197261","name":"Institute for Electronics and Nanotechnology"},{"id":"142761","name":"IRIM"},{"id":"1271","name":"NanoTECH"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"135","name":"Research"},{"id":"138","name":"Biotechnology, Health, Bioengineering, Genetics"},{"id":"145","name":"Engineering"},{"id":"146","name":"Life Sciences and Biology"},{"id":"147","name":"Military Technology"},{"id":"149","name":"Nanotechnology and Nanoscience"}],"keywords":[{"id":"2770","name":"biosensor"},{"id":"12701","name":"Institute for Electronics and Nanotechnology"},{"id":"569","name":"bioengineering"},{"id":"541","name":"Mechanical Engineering"},{"id":"12373","name":"flexible electronics"},{"id":"185486","name":"W. H. Yeo"},{"id":"107","name":"Nanotechnology"},{"id":"168110","name":"nanoscale therapeutics"},{"id":"126571","name":"go-PetitInstitute"}],"core_research_areas":[{"id":"39441","name":"Bioengineering and Bioscience"},{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":["christa.ernst@research.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"636208":{"#nid":"636208","#data":{"type":"news","title":"Spontaneous Formation of Nanoscale Hollow Structures Could Boost Battery Storage","body":[{"value":"\u003Cp\u003EAn unexpected property of nanometer-scale antimony crystals \u0026mdash; the spontaneous formation of hollow structures \u0026mdash; could help give the next generation of lithium ion batteries higher energy density without reducing battery lifetime. The reversibly hollowing structures could allow lithium ion batteries to hold more energy and therefore provide more power between charges.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EFlow of lithium ions into and out of alloy battery anodes has long been a limiting factor in how much energy batteries could hold using conventional materials. Too much ion flow causes anode materials to swell and then shrink during charge-discharge cycles, causing mechanical degradation that shortens battery life. To address that issue, researchers have previously developed hollow \u0026ldquo;yolk-shell\u0026rdquo; nanoparticles that accommodate the volume change caused by ion flow, but fabricating them has been complex and costly.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ENow, a research team has discovered that particles a thousand times smaller than the width of a human hair spontaneously form hollow structures during the charge-discharge cycle without changing size, allowing more ion flow without damaging the anodes. The research was reported June 1 in the journal \u003Cem\u003ENature Nanotechnology\u003C\/em\u003E.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026ldquo;Intentionally engineering hollow nanomaterials has been done for a while now, and it is a promising approach for improving the lifetime and stability of batteries with high energy density,\u0026rdquo; said \u003Ca href=\u0022http:\/\/www.me.gatech.edu\/faculty\/mtmcdowell\u0022\u003EMatthew McDowell\u003C\/a\u003E, assistant professor in the \u003Ca href=\u0022http:\/\/www.me.gatech.edu\u0022\u003EGeorge W. Woodruff School of Mechanical Engineering\u003C\/a\u003E and the \u003Ca href=\u0022http:\/\/www.mse.gatech.edu\u0022\u003ESchool of Materials Science and Engineering\u003C\/a\u003E at the Georgia Institute of Technology. \u0026ldquo;The problem has been that directly synthesizing these hollow nanostructures at the large scales needed for commercial applications is challenging and expensive. Our discovery could offer an easier, streamlined process that could lead to improved performance in a way that is similar to the intentionally engineered hollow structures.\u0026rdquo;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe researchers made their discovery using a high-resolution electron microscope that allowed them to directly visualize battery reactions as they occur at the nanoscale. \u0026ldquo;This is a tricky type of experiment, but if you are patient and do the experiments right, you can learn really important things about how the materials behave in batteries,\u0026rdquo; McDowell said.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe team, which included researchers from ETH Z\u0026uuml;rich and Oak Ridge National Laboratory, also used modeling to create a theoretical framework for understanding why the nanoparticles spontaneously hollow \u0026mdash; instead of shrinking \u0026mdash; during removal of lithium from the battery.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe ability to form and reversibly fill hollow particles during battery cycling occurs only in oxide-coated antimony nanocrystals that are less than approximately 30 nanometers in diameter. The research team found that the behavior arises from a resilient native oxide layer that allows for initial expansion during lithiation \u0026mdash; flow of ions into the anode \u0026mdash; but mechanically prevents shrinkage as antimony forms voids during the removal of ions, a process known as delithiation.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe finding was a bit of a surprise because earlier work on related materials had been performed on larger particles, which expand and shrink instead of forming hollow structures. \u0026ldquo;When we first observed the distinctive hollowing behavior, it was very exciting and we immediately knew this could have important implications for battery performance,\u0026rdquo; McDowell said.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EAntimony is relatively expensive and not currently used in commercial battery electrodes. But McDowell believes the spontaneous hollowing may also occur in less costly related materials such as tin. Next steps would include testing other materials and mapping a pathway to commercial scale-up.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026ldquo;It would be interesting to test other materials to see if they transform according to a similar hollowing mechanism,\u0026rdquo; he said. \u0026ldquo;This could expand the range of materials available for use in batteries. The small test batteries we fabricated showed promising charge-discharge performance, so we would like to evaluate the materials in larger batteries.\u0026rdquo;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThough they may be costly, the self-hollowing antimony nanocrystals have another interesting property: they could also be used in sodium-ion and potassium-ion batteries, emerging systems for which much more research must be done.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026ldquo;This work advances our understanding of how this type of material evolves inside batteries,\u0026rdquo; McDowell said. \u0026ldquo;This information will be critical for implementing the material or related materials in the next generation of lithium-ion batteries, which will be able to store more energy and be just as durable as the batteries we have today.\u0026rdquo;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EIn addition to McDowell, the paper\u0026rsquo;s authors include Matthew Boebinger from Georgia Tech; Olesya Yarema, Maksym Yarema, and Vanessa Wood from the Department of Information Technology and Electrical Engineering at ETH Z\u0026uuml;rich , and Kinga Unocic and Raymond Unocic from the Center for Nanophase Materials Science at Oak Ridge National Laboratory.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EThis work was performed at the Georgia Tech Materials Characterization Facility and the Institute for Electronics and Nanotechnology, a member of the National Nanotechnology Coordinated Infrastructure, which is supported by the National Science Foundation (Grant ECCS-1542174). Support also came from the Department of Energy Office of Science Graduate Student Research Program for research performed at Oak Ridge National Laboratory. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. Support was also provided by a Sloan Research Fellowship in Chemistry from the Alfred P. Sloan Foundation and by the Swiss National Science foundation via an Ambizione Fellowship (no. 161249). The content is solely the responsibility of the authors and does not necessarily represent the official views of the sponsoring organizations.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003ECITATION\u003C\/strong\u003E: Matthew G. Boebinger, et al., \u0026ldquo;Spontaneous and reversible hollowing of alloy anode nanocrystals for stable battery cycling\u0026rdquo; (Nature Nanotechnology, 2020). \u003Ca href=\u0022https:\/\/doi.org\/10.1038\/s41565-020-0690-9\u0022\u003Ehttps:\/\/doi.org\/10.1038\/s41565-020-0690-9\u003C\/a\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EResearch News\u003Cbr \/\u003E\r\nGeorgia Institute of Technology\u003Cbr \/\u003E\r\n177 North Avenue\u003Cbr \/\u003E\r\nAtlanta, Georgia\u0026nbsp; 30332-0181\u0026nbsp; USA\u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EMedia Relations Contact\u003C\/strong\u003E: John Toon (404-894-6986) (\u003Ca href=\u0022mailto:jtoon@gatech.edu\u0022\u003Ejtoon@gatech.edu\u003C\/a\u003E).\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EWriter\u003C\/strong\u003E: John Toon\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EAn unexpected property of nanometer-scale antimony crystals \u0026mdash; the spontaneous formation of hollow structures \u0026mdash; could help give the next generation of lithium ion batteries higher energy density without reducing battery lifetime. The reversibly hollowing structures could allow lithium ion batteries to hold more energy and therefore provide more power between charges.\u003C\/p\u003E\r\n","format":"limited_html"}],"field_summary_sentence":[{"value":"The spontaneous formation of hollow structures in nanometer-scale antimony crystals could make them useful in lithium-ion batteries."}],"uid":"27303","created_gmt":"2020-06-13 18:22:26","changed_gmt":"2020-06-13 18:24:14","author":"John Toon","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2020-06-13T00:00:00-04:00","iso_date":"2020-06-13T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"636204":{"id":"636204","type":"image","title":"Lithium-ion Batteries","body":null,"created":"1592071584","gmt_created":"2020-06-13 18:06:24","changed":"1592071584","gmt_changed":"2020-06-13 18:06:24","alt":"Lithium-ion batteries","file":{"fid":"242075","name":"Batteriessmall.jpg","image_path":"\/sites\/default\/files\/images\/Batteriessmall.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/Batteriessmall.jpg","mime":"image\/jpeg","size":1896996,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Batteriessmall.jpg?itok=Qs3hLhn1"}},"636206":{"id":"636206","type":"image","title":"Battery testing","body":null,"created":"1592071769","gmt_created":"2020-06-13 18:09:29","changed":"1592071769","gmt_changed":"2020-06-13 18:09:29","alt":"Batteries being tested in lab","file":{"fid":"242076","name":"Cycler_Crop.jpg","image_path":"\/sites\/default\/files\/images\/Cycler_Crop.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/Cycler_Crop.jpg","mime":"image\/jpeg","size":1987162,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Cycler_Crop.jpg?itok=huzWio4W"}},"636207":{"id":"636207","type":"image","title":"Antimony anode nanoparticles","body":null,"created":"1592071939","gmt_created":"2020-06-13 18:12:19","changed":"1592071939","gmt_changed":"2020-06-13 18:12:19","alt":"Electron microscope image of nanoparticles","file":{"fid":"242077","name":"ParticlesImage.jpg","image_path":"\/sites\/default\/files\/images\/ParticlesImage.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/ParticlesImage.jpg","mime":"image\/jpeg","size":2205549,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/ParticlesImage.jpg?itok=Wa76D4Ez"}}},"media_ids":["636204","636206","636207"],"groups":[{"id":"1188","name":"Research Horizons"}],"categories":[{"id":"135","name":"Research"},{"id":"141","name":"Chemistry and Chemical Engineering"},{"id":"144","name":"Energy"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"}],"keywords":[{"id":"7826","name":"Batteries"},{"id":"8948","name":"lithium-ion"},{"id":"185112","name":"lithium-ion batteries"},{"id":"431","name":"nanoscale"},{"id":"7070","name":"anode"},{"id":"7309","name":"electrode"},{"id":"2054","name":"nanoparticle"},{"id":"44511","name":"energy storage"},{"id":"185113","name":"antimony"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39531","name":"Energy and Sustainable Infrastructure"},{"id":"39471","name":"Materials"}],"news_room_topics":[{"id":"71881","name":"Science and Technology"}],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EJohn Toon\u003C\/p\u003E\r\n\r\n\u003Cp\u003EResearch News\u003C\/p\u003E\r\n\r\n\u003Cp\u003E(404) 894-6986\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["jtoon@gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"616080":{"#nid":"616080","#data":{"type":"news","title":"Ravichandran Chosen for IMAPS Best Paper Award","body":[{"value":"\u003Cp\u003ESiddharth Ravichandran won the Best Student Paper Award at the 51st International Symposium on Microelectronics (IMAPS), held October 9-11, 2018 in Pasadena, California. He is a Ph.D. student in the Georgia Tech School of Electrical and Computer Engineering (ECE) and is advised by ECE Professor Rao Tummala.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ERavichandran received the award for his paper entitled \u0026ldquo;Design and Demonstration of 3D Glass Panel Embedded (GPE) Packages for Heterogeneous Integration.\u0026rdquo; The paper addresses the limitations of current mold-based wafer-level fanout packaging technology by presenting a novel 3D glass-based panel embedded packaging technology to meet the bandwidth, power-efficiency, cost, and reliability requirements of future mobile and high-performance computing applications.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThis research was supported by the Industry Consortium at the 3D Systems Packaging Research Center (PRC) at Georgia Tech. Ravichandran, along with his colleagues in the PRC, are developing all of the basic technologies to design and demonstrate 3D GPE packages for a variety of heterogeneous integration applications that include ultra-high bandwidth computing; 5G and millimeter wave communications; MEMS \u0026amp; sensors; IoTs; and flexible, wearable, and low and high-power electronics.\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EECE Ph.D. student\u0026nbsp;Siddharth Ravichandran won the Best Student Paper Award at the 51st International Symposium on Microelectronics (IMAPS), held October 9-11, 2018 in Pasadena, California.\u0026nbsp;\u003C\/p\u003E\r\n","format":"limited_html"}],"field_summary_sentence":[{"value":"ECE Ph.D. student\u00a0Siddharth Ravichandran won the Best Student Paper Award at the 51st International Symposium on Microelectronics (IMAPS), held October 9-11, 2018 in Pasadena, California.\u00a0"}],"uid":"27241","created_gmt":"2019-01-08 20:37:30","changed_gmt":"2019-01-08 20:37:30","author":"Jackie Nemeth","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2019-01-08T00:00:00-05:00","iso_date":"2019-01-08T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"616071":{"id":"616071","type":"image","title":"Siddharth Ravichandran","body":null,"created":"1546974948","gmt_created":"2019-01-08 19:15:48","changed":"1546974948","gmt_changed":"2019-01-08 19:15:48","alt":"photograph of Siddharth Ravichandran","file":{"fid":"234505","name":"Siddharth_Ravichandran.jpg","image_path":"\/sites\/default\/files\/images\/Siddharth_Ravichandran.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/Siddharth_Ravichandran.jpg","mime":"image\/jpeg","size":588368,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Siddharth_Ravichandran.jpg?itok=tlI5l6-x"}}},"media_ids":["616071"],"related_links":[{"url":"http:\/\/www.prc.gatech.edu","title":"3D Systems Packaging Research Center"},{"url":"http:\/\/www.ece.gatech.edu","title":"School of Electrical and Computer Engineering"},{"url":"http:\/\/www.gatech.edu","title":"Georgia Tech"},{"url":"http:\/\/www.imaps.org\/imaps2018\/","title":"51st International Symposium on Microelectronics (IMAPS)"}],"groups":[{"id":"1255","name":"School of Electrical and Computer Engineering"}],"categories":[{"id":"134","name":"Student and Faculty"},{"id":"8862","name":"Student Research"},{"id":"135","name":"Research"},{"id":"144","name":"Energy"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"150","name":"Physics and Physical Sciences"}],"keywords":[{"id":"180098","name":"Siddharth Ravichandran"},{"id":"109","name":"Georgia Tech"},{"id":"166855","name":"School of Electrical and Computer Engineering"},{"id":"180099","name":"51st International Symposium on Microelectronics (IMAPS)"},{"id":"12103","name":"Rao Tummala"},{"id":"180100","name":"3D Glass Panel Embedded Packaging Technology"},{"id":"180101","name":"mobile computing applications"},{"id":"180102","name":"high-performance computing applications"},{"id":"12072","name":"3D Systems Packaging Research Center"},{"id":"180103","name":"ultra-high bandwidth computing"},{"id":"180104","name":"5G and millimeter wave communications"},{"id":"180105","name":"MEMS \u0026 sensors"},{"id":"180106","name":"IoTs"},{"id":"12373","name":"flexible electronics"},{"id":"9791","name":"wearable electronics"},{"id":"180107","name":"low and high-power electronics"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EJackie Nemeth\u003C\/p\u003E\r\n\r\n\u003Cp\u003ESchool of Electrical and Computer Engineering\u003C\/p\u003E\r\n\r\n\u003Cp\u003E404-894-2906\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["jackie.nemeth@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"609409":{"#nid":"609409","#data":{"type":"news","title":"Nanostructured Gate Dielectric Boosts Stability of Organic Thin-Film Transistors","body":[{"value":"\u003Cp\u003EA nanostructured gate dielectric may have addressed the most significant obstacle to expanding the use of organic semiconductors for thin-film transistors. The structure, composed of a fluoropolymer layer followed by a nanolaminate made from two metal oxide materials, serves as gate dielectric and simultaneously protects the organic semiconductor \u0026ndash; which had previously been vulnerable to damage from the ambient environment \u0026ndash; and enables the transistors to operate with unprecedented stability.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe new structure gives thin-film transistors stability comparable to those made with inorganic materials, allowing them to operate in ambient conditions \u0026ndash; even underwater. Organic thin-film transistors can be made inexpensively at low temperature on a variety of flexible substrates using techniques such as inkjet printing, potentially opening new applications that take advantage of simple, additive fabrication processes.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026ldquo;We have now proven a geometry that yields lifetime performance that for the first time establish that organic circuits can be as stable as devices produced with conventional inorganic technologies,\u0026rdquo; said \u003Ca href=\u0022https:\/\/www.ece.gatech.edu\/faculty-staff-directory\/bernard-j-kippelen\u0022\u003EBernard Kippelen\u003C\/a\u003E, the Joseph M. Pettit professor in Georgia Tech\u0026rsquo;s \u003Ca href=\u0022http:\/\/www.ece.gatech.edu\u0022\u003ESchool of Electrical and Computer Engineering\u003C\/a\u003E (ECE) and director of Georgia Tech\u0026rsquo;s \u003Ca href=\u0022http:\/\/www.cope.gatech.edu\/\u0022\u003ECenter for Organic Photonics and Electronics\u003C\/a\u003E (COPE). \u0026ldquo;This could be the tipping point for organic thin-film transistors, addressing long-standing concerns about the stability of organic-based printable devices.\u0026rdquo;\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe research was reported January 12 in the journal \u003Cem\u003EScience Advances\u003C\/em\u003E. The research is the culmination of 15 years of development within COPE and was supported by sponsors including the Office of Naval Research, the Air Force Office of Scientific Research, and the National Nuclear Security Administration.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ETransistors comprise three electrodes. The source and drain electrodes pass current to create the \u0026ldquo;on\u0026rdquo; state, but only when a voltage is applied to the gate electrode, which is separated from the organic semiconductor material by a thin dielectric layer. A unique aspect of the architecture developed at Georgia Tech is that this dielectric layer uses two components, a fluoropolymer and a metal-oxide layer.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026ldquo;When we first developed this architecture, this metal oxide layer was aluminum oxide, which is susceptible to damage from humidity,\u0026rdquo; said Canek Fuentes-Hernandez, a senior research scientist and coauthor of the paper. \u0026ldquo;Working in collaboration with Georgia Tech Professor Samuel Graham, we developed complex nanolaminate barriers which could be produced at temperatures below 110 degrees Celsius and that when used as gate dielectric, enabled transistors to sustain being immersed in water near its boiling point.\u0026rdquo;\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe new Georgia Tech architecture uses alternating layers of aluminum oxide and hafnium oxide \u0026ndash; five layers of one, then five layers of the other, repeated 30 times atop the fluoropolymer \u0026ndash; to make the dielectric. The oxide layers are produced with atomic layer deposition (ALD). The nanolaminate, which ends up being about 50 nanometers thick, is virtually immune to the effects of humidity.\u0026nbsp;\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026ldquo;While we knew this architecture yielded good barrier properties, we were blown away by how stably transistors operated with the new architecture,\u0026rdquo; said Fuentes-Hernandez. \u0026ldquo;The performance of these transistors remained virtually unchanged even when we operated them for hundreds of hours and at elevated temperatures of 75 degrees Celsius. This was by far the most stable organic-based transistor we had ever fabricated.\u0026rdquo;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EFor the laboratory demonstration, the researchers used a glass substrate, but many other flexible materials \u0026ndash; including polymers and even paper \u0026ndash; could also be used.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EIn the lab, the researchers used standard ALD growth techniques to produce the nanolaminate. But newer processes referred to as spatial ALD \u0026ndash; utilizing multiple heads with nozzles delivering the precursors \u0026ndash; could accelerate production and allow the devices to be scaled up in size. \u0026ldquo;ALD has now reached a level of maturity at which it has become a scalable industrial process, and we think this will allow a new phase in the development of organic thin-film transistors,\u0026rdquo; Kippelen said.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EAn obvious application is for the transistors that control pixels in organic light-emitting displays (OLEDs) used in such devices as the iPhone X and Samsung phones. These pixels are now controlled by transistors fabricated with conventional inorganic semiconductors, but with the additional stability provided by the new nanolaminate, they could perhaps be made with printable organic thin-film transistors instead.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EInternet of things (IoT) devices could also benefit from fabrication enabled by the new technology, allowing production with inkjet printers and other low-cost printing and coating processes. The nanolaminate technique could also allow development of inexpensive paper-based devices, such as smart tickets, that would use antennas, displays and memory fabricated on paper through low-cost processes.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EBut the most dramatic applications could be in very large flexible displays that could be rolled up when not in use.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026ldquo;We will get better image quality, larger size and better resolution,\u0026rdquo; Kippelen said. \u0026ldquo;As these screens become larger, the rigid form factor of conventional displays will be a limitation. Low processing temperature carbon-based technology will allow the screen to be rolled up, making it easy to carry around and less susceptible to damage.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EFor their demonstration, Kippelen\u0026rsquo;s team \u0026ndash; which also includes Xiaojia Jia, Cheng-Yin Wang and Youngrak Park \u0026ndash; used a model organic semiconductor. The material has well-known properties, but with carrier mobility values of 1.6 cm2\/Vs isn\u0026rsquo;t the fastest available. As a next step, they researchers would like to test their process on newer organic semiconductors that provide higher charge mobility. They also plan to continue testing the nanolaminate under different bending conditions, across longer time periods, and in other device platforms such as photodetectors.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThough the carbon-based electronics are expanding their device capabilities, traditional materials like silicon have nothing to fear.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026ldquo;When it comes to high speeds, crystalline materials like silicon or gallium nitride will certainly have a bright and very long future,\u0026rdquo; said Kippelen. \u0026ldquo;But for many future printed applications, a combination of the latest organic semiconductor with higher charge mobility and the nanostructured gate dielectric will provide a very powerful device technology.\u0026rdquo;\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EThis research was supported in part by the Center for Organic Photonics and Electronics at Georgia Tech, by the Department of the Navy, Office of Naval Research Awards N00014-14-1-0580 and N00014-16-1-2520, through the MURI Center for Advanced Photovoltaics (CAOP), by the Air Force Office of Scientific Research through Award No. FA9550-16-1-0168, by the National Nuclear Security Administration Award DE-NA0002576 through the Consortium for Nonproliferation Enabling Technologies (CNEC). Seminal work on the concept of using a bilayer gate dielectric in OFETs was funded in part by Solvay S.A. and described in part in issued patent No. US 9,368,737 B2.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003ECITATION\u003C\/strong\u003E: Xiaojia Jia, Canek Fuentes-Hernandez, Cheng-Yin Wang, Youngrak Park, Bernard Kippelen, \u0026ldquo;Stable organic thin-film transistors,\u0026rdquo; (Science Advances, 2018).\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EResearch News\u003Cbr \/\u003E\r\nGeorgia Institute of Technology\u003Cbr \/\u003E\r\n177 North Avenue\u003Cbr \/\u003E\r\nAtlanta, Georgia 30332-0181\u0026nbsp; USA\u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EMedia Relations Contacts\u003C\/strong\u003E: John Toon (404-894-6986) (jtoon@gatech.edu) or Josh Brown (404-385-0500) (josh.brown@comm.gatech.edu)\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EWriter\u003C\/strong\u003E: John Toon\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EA nanostructured gate dielectric developed in the labs of STAMI-COPE Professor Bernard Kippelen may have addressed the most significant obstacle to expanding the use of organic semiconductors for thin-film transistors. The structure, composed of a fluoropolymer layer followed by a nanolaminate made from two metal oxide materials, serves as gate dielectric and simultaneously protects the organic semiconductor \u0026ndash; which had previously been vulnerable to damage from the ambient environment \u0026ndash; and enables the transistors to operate with unprecedented stability.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EFor more see the \u003Ca href=\u0022http:\/\/www.rh.gatech.edu\/news\/600798\/nanostructured-gate-dielectric-boosts-stability-organic-thin-film-transistors\u0022\u003EArticle\u003C\/a\u003E in Georgia Tech Research Horizons\u003C\/p\u003E\r\n","format":"limited_html"}],"field_summary_sentence":[{"value":"STAMI-COPE researchers have addressed one of the most significant challenges to the use of organic thin-film transistors."}],"uid":"28463","created_gmt":"2018-08-07 17:45:08","changed_gmt":"2018-08-07 17:46:29","author":"Tim Parker","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2018-01-12T00:00:00-05:00","iso_date":"2018-01-12T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"600797":{"id":"600797","type":"image","title":"Thin-film transistor schematic","body":null,"created":"1515791525","gmt_created":"2018-01-12 21:12:05","changed":"1515791525","gmt_changed":"2018-01-12 21:12:05","alt":"Schematic of thin-film transistor","file":{"fid":"229023","name":"thin-film-schematic.png","image_path":"\/sites\/default\/files\/images\/thin-film-schematic.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/thin-film-schematic.png","mime":"image\/png","size":134654,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/thin-film-schematic.png?itok=_gv7ddUH"}},"600795":{"id":"600795","type":"image","title":"Thin-film transistor2","body":null,"created":"1515791419","gmt_created":"2018-01-12 21:10:19","changed":"1515791419","gmt_changed":"2018-01-12 21:10:19","alt":"Thin-film transistor under test","file":{"fid":"229022","name":"thin-film5.jpg","image_path":"\/sites\/default\/files\/images\/thin-film5.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/thin-film5.jpg","mime":"image\/jpeg","size":430647,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/thin-film5.jpg?itok=Ll6G8X2i"}},"600794":{"id":"600794","type":"image","title":"Thin-film transistor","body":null,"created":"1515790462","gmt_created":"2018-01-12 20:54:22","changed":"1515790462","gmt_changed":"2018-01-12 20:54:22","alt":"New organic thin-film architecture","file":{"fid":"229021","name":"thin-film2.jpg","image_path":"\/sites\/default\/files\/images\/thin-film2.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/thin-film2.jpg","mime":"image\/jpeg","size":240943,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/thin-film2.jpg?itok=gU3SYqhB"}}},"media_ids":["600797","600795","600794"],"related_links":[{"url":"http:\/\/www.rh.gatech.edu\/news\/600798\/nanostructured-gate-dielectric-boosts-stability-organic-thin-film-transistors","title":"Nanostructured Gate Dielectric Article"}],"groups":[{"id":"585025","name":"Center for the Science and Technology of Advanced Materials and Interfaces (STAMI)"}],"categories":[{"id":"135","name":"Research"},{"id":"141","name":"Chemistry and Chemical Engineering"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"}],"keywords":[{"id":"172973","name":"STAMI"},{"id":"918","name":"COPE"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"},{"id":"39481","name":"National Security"}],"news_room_topics":[{"id":"71881","name":"Science and Technology"}],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EJohn Toon\u003C\/p\u003E\r\n\r\n\u003Cp\u003EResearch News\u003C\/p\u003E\r\n\r\n\u003Cp\u003E(404) 894-6986\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["jtoon@gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"607421":{"#nid":"607421","#data":{"type":"news","title":"Su Invited to Rising Stars Workshop","body":[{"value":"\u003Cp\u003EWenjing Su\u0026nbsp;has been invited to attend the 2018 Rising Stars Workshop, hosted by the MIT Department of Electrical Engineering and Computer Science. Rising Stars is an intensive workshop for women graduate students and postdoctoral fellows who are interested in pursuing academic careers. The event will be held October 28-30, 2018 at the MIT campus in Cambridge, Massachusetts.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ESu is a May 2018 Ph.D. graduate of the Georgia Tech School of Electrical and Computer Engineering (ECE) and now works at Google as a hardware engineer. She joined the ATHENA Lab in fall 2013, where she was advised by Manos Tentzeris, who holds the Ken Byers Professorship in Flexible Electronics. She received her bachelor\u0026rsquo;s degree in Electrical Engineering from Beijing Institute of Technology in summer 2013 and her master\u0026#39;s in ECE at Georgia Tech in May 2015.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ESu\u0026#39;s Ph.D. research focuses on interface advanced novel fabrication techniques such as inkjet-printing and 3D printing, and special\u0026nbsp;mechanical\u0026nbsp;structures such as microfluidics and origami. She also works on high-performance microwave components\/antennas to solve existing problems and extend to applications in smart health, wearable electronics in Internet-of-Things (IoT) applications. Su specifically focuses on designing novel reconfigurable antennas\/microwave passives components using dielectric liquid, as well as liquid metal alloy, and building liquid sensors\/sensing platforms for easier communication and better sensing.\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003ERecent ECE Ph.D. graduate\u0026nbsp;Wenjing Su\u0026nbsp;has been invited to attend the 2018 Rising Stars Workshop, hosted by the MIT Department of Electrical Engineering and Computer Science.\u003C\/p\u003E\r\n","format":"limited_html"}],"field_summary_sentence":[{"value":"Recent ECE Ph.D. graduate\u00a0Wenjing Su\u00a0has been invited to attend the 2018 Rising Stars Workshop, hosted by the MIT Department of Electrical Engineering and Computer Science."}],"uid":"27241","created_gmt":"2018-06-29 17:13:56","changed_gmt":"2018-06-29 17:31:22","author":"Jackie Nemeth","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2018-06-29T00:00:00-04:00","iso_date":"2018-06-29T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"607420":{"id":"607420","type":"image","title":"Wenjing Su","body":null,"created":"1530292332","gmt_created":"2018-06-29 17:12:12","changed":"1530292332","gmt_changed":"2018-06-29 17:12:12","alt":"photograph of Wenjing Su","file":{"fid":"231699","name":"WenjingSu.jpg","image_path":"\/sites\/default\/files\/images\/WenjingSu.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/WenjingSu.jpg","mime":"image\/jpeg","size":724166,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/WenjingSu.jpg?itok=0ypVhl74"}}},"media_ids":["607420"],"related_links":[{"url":"http:\/\/www.athena.gatech.edu\/index.html","title":"ATHENA Group"},{"url":"http:\/\/www.ece.gatech.edu","title":"School of Electrical and Computer Engineering"},{"url":"http:\/\/www.gatech.edu","title":"Georgia Tech"},{"url":"https:\/\/risingstars18-eecs.mit.edu","title":"Rising Stars Workshop"}],"groups":[{"id":"1255","name":"School of Electrical and Computer Engineering"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"130","name":"Alumni"},{"id":"134","name":"Student and Faculty"},{"id":"8862","name":"Student Research"},{"id":"135","name":"Research"},{"id":"138","name":"Biotechnology, Health, Bioengineering, Genetics"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"150","name":"Physics and Physical Sciences"}],"keywords":[{"id":"178451","name":"Wenjing Su"},{"id":"166855","name":"School of Electrical and Computer Engineering"},{"id":"109","name":"Georgia Tech"},{"id":"172021","name":"Emmanouil M. Manos Tentzeris"},{"id":"413","name":"Manos Tentzeris"},{"id":"167025","name":"ATHENA Lab"},{"id":"178428","name":"MIT Rising Stars Workshop"},{"id":"12373","name":"flexible electronics"},{"id":"178452","name":"advanced novel fabrication techniques"},{"id":"79031","name":"inkjet printing"},{"id":"13351","name":"3d printing"},{"id":"178453","name":"mechanical structures"},{"id":"12427","name":"microfluidics"},{"id":"4332","name":"origami"},{"id":"5307","name":"Antennas"},{"id":"178454","name":"high-performance microwave components"},{"id":"177064","name":"smart health"},{"id":"9791","name":"wearable electronics"},{"id":"68951","name":"Internet of Things"},{"id":"2183","name":"communications"},{"id":"169638","name":"sensing"},{"id":"167066","name":"sensors"}],"core_research_areas":[{"id":"39441","name":"Bioengineering and Bioscience"},{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EJackie Nemeth\u003C\/p\u003E\r\n\r\n\u003Cp\u003ESchool of Electrical and Computer Engineering\u003C\/p\u003E\r\n\r\n\u003Cp\u003E404-894-2906\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["jackie.nemeth@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"606865":{"#nid":"606865","#data":{"type":"news","title":"Ferroelectricity\u2019s Mystery Sister may do Twice the Work for Less","body":[{"value":"\u003Cp\u003EOur daily lives are infused with activities and interactions that rely on modern electronics enabled by nanotechnologies. Cell-phones, automotive and aviation sensors, personal and super-computers, healthcare technologies, and even our home appliances\u0026mdash;many of which now have machine learning and artificial intelligent capabilities\u0026mdash;are becoming ever more connected and \u0026lsquo;smarter\u0026rdquo;. However, with this push to deploy our devices on a global scale, our progress is increasingly being hindered by our apparent inability to further miniaturize the building block of electronics\u0026mdash;the transistors. The transistors are already too small\u0026mdash;of the order of 10 nanometers or so, ten thousand times smaller than a single strand of hair. In essence, we have become prisoners of fundamental physical limits of the transistor.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EA potential strategy to overcome this barrier is to introduce new materials into the transistor structure to enhance their performance and functionalities. And that is the playground of Professor Asif Khan\u0026rsquo;s group of the School of Electrical and Computer Engineering at the Georgia Institute of Technology. \u0026ldquo;One of the interesting classes of functional materials that we are working on is called antiferroelectric oxides, which could lead to efficient, nanoscale logic and memory devices and devices which can even mimic the functions of biological neurons and synapses,\u0026rdquo; says Khan. In their recent work published as an Editor\u0026rsquo;s Pick in the May issue of Applied Physics Letters, they show how these mystery materials\u0026mdash;antiferroelectrics\u0026mdash;can be fine-tuned by doping, and how their processing techniques can be simplified to ease their entry into conventional micro- and nano-electronic fabrication technologies.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EAntiferroelectric materials are electrical insulating in a way very similar to the dielectric materials used in regular capacitors. However, the significant difference is that when a certain voltage is applied across it, it undergoes a phase transition into another \u0026nbsp;insulating state which is structurally different than the parent one. With appropriate nano-scale engineering, this phenomenon can be the basis for high performance logic transistors and disruptive memory technologies. Interestingly, antiferroelectricity was discovered more than 60 years ago in perovskite materials\u0026mdash;yet it did not have a significant impact on the electronics industry despite the attractiveness because perovskites are not compatible with currently used CMOS fabrication processes. What makes the Khan group\u0026rsquo;s work particularly relevant for transistor applications is that they are studying this phenomenon in Zirconia--a very well-studied non-perovskite binary oxide which has already been in use for more than a decade in the semiconductor industry.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe major contribution of the recent work by Khan\u0026rsquo;s group is that they significantly simplified the complex process flow of stabilizing the antiferroelectric phase of zirconia. Typically, a metallic capping layer and a high temperature annealing step is required to convert dielectric zirconia into an antiferroelectric state. The group were able to eliminate these process steps through a thoughtful design process of the material stack. Khan is hopeful that this will reduce the barrier to entry of antiferroelectrics into the state-of-the-art semiconductor manufacturing processes for novel device applications. Furthermore, by introducing small amounts of lanthanum into zirconia, the researchers were able to tune the properties of antiferroelectric zirconia, namely critical field\/voltage for phase transition, dielectric constant and polarization. \u0026ldquo;Such tunability can not only enable a large design space for nanoelectronic antiferroelectric devices, but also be useful for their traditional applications of antiferroelectrics in electro-calories, pyroelectrics and micro-actuators,\u0026rdquo; says Khan. He also mentions that antiferroelectricity is a close cousin of a well-known phenomenon\u0026mdash;ferroelectricity, which being researched and adopted by major semiconductor manufacturers for potential memory applications. His previous work also focused on ferroelectric oxides for ultra-low power negative capacitance transistors. However, as he points out, antiferroelectric oxides can do all that ferroelectric oxides can but with much better endurance and reliability and reduced process complexity.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EKhan\u0026rsquo;s group actively collaborated with their industry partner, Eugenus, Inc. located in San Jose, CA. \u0026ldquo;Our industry-academia partnership is vital for bringing new ideas into the fore-fronts of technology,\u0026rdquo; says Dr. Mukherjee of Eugenus, Inc., also a co-author of the paper. \u0026nbsp;\u0026ldquo;We look forward to further collaboration to assess the applicability and the potential of new material and device concepts.\u0026rdquo; The Khan group also collaborated with the Charles University at Prague, Czech Republic, on structural characterization of the antiferroelectric zirconia films.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E- Christa M. Ernst\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026ldquo;Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition\/-metallization anneals\u0026rdquo; is an Editor\u0026rsquo;s Pick in May\u0026rsquo;s \u003Cem\u003EApplied Physics Letters\u003C\/em\u003E. You can view the article here. \u003Ca href=\u0022https:\/\/aip.scitation.org\/doi\/10.1063\/1.5037185\u0022\u003Ehttps:\/\/aip.scitation.org\/doi\/10.1063\/1.5037185\u003C\/a\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003EKhan\u0026rsquo;s work at Georgia Tech is supported in part by the National Science Foundation.\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"In their recent work published as an Editor\u2019s Pick in the May issue of Applied Physics Letters, they show how these mystery materials\u2014antiferroelectrics\u2014can be fine-tuned by doping..."}],"uid":"27863","created_gmt":"2018-06-11 13:52:17","changed_gmt":"2018-06-11 14:13:26","author":"Christa Ernst","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2018-06-11T00:00:00-04:00","iso_date":"2018-06-11T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"606864":{"id":"606864","type":"image","title":"Asif Khan in the Lab","body":null,"created":"1528725076","gmt_created":"2018-06-11 13:51:16","changed":"1528725076","gmt_changed":"2018-06-11 13:51:16","alt":"","file":{"fid":"231471","name":"Khan Research Phot.jpg","image_path":"\/sites\/default\/files\/images\/Khan%20Research%20Phot.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/Khan%20Research%20Phot.jpg","mime":"image\/jpeg","size":507540,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Khan%20Research%20Phot.jpg?itok=GkT6dEK-"}},"606863":{"id":"606863","type":"image","title":"Zirconia Crystal Structure","body":null,"created":"1528724830","gmt_created":"2018-06-11 13:47:10","changed":"1532460645","gmt_changed":"2018-07-24 19:30:45","alt":"","file":{"fid":"231470","name":"Zirconimu Structure \u0027.png","image_path":"\/sites\/default\/files\/images\/Zirconimu%20Structure%20%27.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/Zirconimu%20Structure%20%27.png","mime":"image\/png","size":146743,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Zirconimu%20Structure%20%27.png?itok=8O_rxL1s"}}},"media_ids":["606864","606863"],"related_links":[{"url":"https:\/\/aip.scitation.org\/doi\/10.1063\/1.5037185","title":"\u201cAntiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition\/-metallization anneals\u201d"}],"groups":[{"id":"213791","name":"3D Systems Packaging Research Center"},{"id":"198081","name":"Georgia Electronic Design Center (GEDC)"},{"id":"197261","name":"Institute for Electronics and Nanotechnology"},{"id":"1271","name":"NanoTECH"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"135","name":"Research"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"}],"keywords":[{"id":"166968","name":"the Institute for Electronics and Nanotechnology"},{"id":"168380","name":"the School of Electrical and Computer Engineering"},{"id":"173625","name":"The School of Mechanical Engineering"},{"id":"107","name":"Nanotechnology"},{"id":"12373","name":"flexible electronics"},{"id":"5209","name":"carbon nanotubes"},{"id":"74491","name":"electro-optics"},{"id":"58001","name":"the institute for materials"},{"id":"172838","name":"the Woodruff School of Mechanical Engineering"},{"id":"166974","name":"the School of Chemical and Biomolecular Engineering"},{"id":"1259","name":"electrical engineering"},{"id":"249","name":"Biomedical Engineering"},{"id":"2290","name":"photonics"},{"id":"1692","name":"materials"},{"id":"1785","name":"nanomaterials"},{"id":"178244","name":"Asif Khan"},{"id":"175028","name":"ferroelectrics"},{"id":"178245","name":"antiferroelectrics"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cdiv\u003E\u0026nbsp;\u003C\/div\u003E\r\n\r\n\u003Cdiv\u003E\u003Cstrong\u003EChrista M. Ernst - Marketing Manager\u003C\/strong\u003E\u003C\/div\u003E\r\n\r\n\u003Cdiv\u003EThe Institute for Electronics and Nanotechnology at Georgia Tech\u003C\/div\u003E\r\n\r\n\u003Cdiv\u003E345 Ferst Drive, Atlanta GA, 30332 | 1151B\u003C\/div\u003E\r\n\r\n\u003Cdiv\u003E404.894.1665 | christa.ernst@ien.gatech.edu | ien.gatech.edu | sums.gatech.edu\u003C\/div\u003E\r\n","format":"limited_html"}],"email":["christa.ernst@ien.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"606723":{"#nid":"606723","#data":{"type":"news","title":"Spring 2018 IEN Seed Grant Winners Announced","body":[{"value":"\u003Cp\u003EThe Institute for Electronics and Nanotechnology at Georgia Tech has announced the winners for the 2018 Spring Seed Grant Awards. The primary purpose of the IEN Seed Grant is to give first or second year graduate students in various disciplines working on original and un-funded research in micro- and nano-scale projects the opportunity to access the most advanced academic cleanroom space in the Southeast. In addition to accessing the high-level fabrication, lithography, and characterization tools in the labs, the students will have the opportunity to gain proficiency in cleanroom and tool methodology and to use the consultation services provided by research staff members of the IEN Advanced Technology Team.\u0026nbsp; In addition, the Seed Grant program gives faculty with novel research topics the ability to develop preliminary data in order to pursue follow-up funding sources.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EOver the course of five years, this grant program has seeded forty-five projects with forty-nine students working in ten different schools in COE and COS, as well as the Georgia Tech Research Institute and 2 external projects.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe 4 winning projects, from a diverse group of engineering disciplines, were awarded a six-month block of IEN cleanroom and lab access time. In keeping with the interdisciplinary mission of IEN, the projects that will be enabled by the grants include research in materials, biomedicine, energy production, and microelectronics packaging applications.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe Spring 2018 IEN Seed Grant Award winners are:\u003C\/p\u003E\r\n\r\n\u003Cul\u003E\r\n\t\u003Cli\u003EJiang Chen (PI Ben Wang - MSE): \u003Cem\u003EValidation and Characterization of Living Cell Grafting on Polycaprolactone Fibers for Textile Tissue Engineering \u003C\/em\u003E\u003C\/li\u003E\r\n\t\u003Cli\u003EFatima Chrit (PI Alexander Alexeev - ME): \u003Cem\u003EMicrofluidic Adhesion-based Sorting of Biological Cells \u003C\/em\u003E\u003C\/li\u003E\r\n\t\u003Cli\u003EZifei Sun (PI Gleb Yushin - MSE): \u003Cem\u003EFeOx Coated FeF3-C Nanofibers as Free-standing Cathodes for Sodium- Ion Batteries \u003C\/em\u003E\u003C\/li\u003E\r\n\t\u003Cli\u003ETing Wang (PI Xing Xie - Civil and Environmental Engineering): \u003Cem\u003EDevelopment of Lab-on-a-Chip Devices for the Mechanisms Study of Cell Transportation and Bacteria Inactivation in a Non-Uniform Electric Field \u003C\/em\u003E\u003C\/li\u003E\r\n\u003C\/ul\u003E\r\n\r\n\u003Cp\u003EAwardees will present the results of their research efforts at the annual IEN User Day in 2019.\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"In keeping with the interdisciplinary mission of IEN, the projects that will be enabled by the grants include research in materials, biomedicine, energy production, and microelectronics packaging applications."}],"uid":"27863","created_gmt":"2018-06-04 14:05:23","changed_gmt":"2018-06-04 14:09:55","author":"Christa Ernst","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2018-06-04T00:00:00-04:00","iso_date":"2018-06-04T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"606724":{"id":"606724","type":"image","title":"Arith Rajapaks Poster ","body":null,"created":"1528121293","gmt_created":"2018-06-04 14:08:13","changed":"1528121293","gmt_changed":"2018-06-04 14:08:13","alt":"Fall 2017 Seed Grant Winner at the IEN User Poster Session on May 21, 2018 - Arith Rajapaks","file":{"fid":"231400","name":"Arith Rajapakse  Poster.png","image_path":"\/sites\/default\/files\/images\/Arith%20Rajapakse%20%20Poster.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/Arith%20Rajapakse%20%20Poster.png","mime":"image\/png","size":326599,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Arith%20Rajapakse%20%20Poster.png?itok=FSCvibBj"}}},"media_ids":["606724"],"groups":[{"id":"213791","name":"3D Systems Packaging Research Center"},{"id":"198081","name":"Georgia Electronic Design Center (GEDC)"},{"id":"197261","name":"Institute for Electronics and Nanotechnology"},{"id":"1271","name":"NanoTECH"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"130","name":"Alumni"},{"id":"42911","name":"Education"},{"id":"134","name":"Student and Faculty"},{"id":"8862","name":"Student Research"},{"id":"138","name":"Biotechnology, Health, Bioengineering, Genetics"},{"id":"141","name":"Chemistry and Chemical Engineering"},{"id":"144","name":"Energy"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"150","name":"Physics and Physical Sciences"}],"keywords":[{"id":"166968","name":"the Institute for Electronics and Nanotechnology"},{"id":"168380","name":"the School of Electrical and Computer Engineering"},{"id":"173625","name":"The School of Mechanical Engineering"},{"id":"107","name":"Nanotechnology"},{"id":"12373","name":"flexible electronics"},{"id":"5209","name":"carbon nanotubes"},{"id":"74491","name":"electro-optics"},{"id":"58001","name":"the institute for materials"},{"id":"172838","name":"the Woodruff School of Mechanical Engineering"},{"id":"166974","name":"the School of Chemical and Biomolecular Engineering"},{"id":"167679","name":"Seed Grant"},{"id":"101","name":"Award"},{"id":"1259","name":"electrical engineering"},{"id":"249","name":"Biomedical Engineering"},{"id":"2290","name":"photonics"},{"id":"1692","name":"materials"},{"id":"1785","name":"nanomaterials"},{"id":"169987","name":"student research funding"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003E\u003Ca href=\u0022mailto:christa.ernst@ien.gatech.edu?subject=RE%3A%20IEN%20Seed%20Grant\u0022\u003EChrista Ernst\u003C\/a\u003E\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["christa.ernst@ien.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"599676":{"#nid":"599676","#data":{"type":"news","title":"Georgia Tech and NextFlex Team-Up to Make the Internet-of-Things More Flexible \u0026 Power Efficient","body":[{"value":"\u003Cp\u003EThe Internet-of-Things (IoT) is changing the way people interact with everything around them. Networked IoT, through its hardware and software, offers the potential to affect positive change in everyday life by enabling real-time decision making process. Better decisions offer opportunities for behavioral and systems changes that can yield improvements in nearly every aspect of our lives; from how we exercise and entertain, how we communicate with others, what we eat and drink, how we learn and travel, how we receive healthcare, and how we interact with our house, cars, appliances, and other inanimate entities \u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EWith billions of connected devices, and several more billions to come in the next few years, the opportunities are endless. \u0026nbsp;With such a dramatic growth, the devices need to be low-cost, preferably self-powered, low power-consuming, wirelessly connectible, reliable, mass producible, customizable, easily accessible and usable, lightweight, and also be able to conform to the surface of the object to which they are attached. \u0026nbsp;This conformality then drives the need for flexible electronics, changing the world of electronics from one of being flat and stiff to one which is bendable and stretchable. This paradigm shift in electronics, driven by the shape of things-to come drives the need for Flexible Hybrid Electronics (FHE).\u003C\/p\u003E\r\n\r\n\u003Cp\u003EWith these grand challenges in mind, Prof. Suresh Sitaraman from the George W. Woodruff School of Mechanical Engineering and the Institute for Electronics and Nanotechnology (IEN) , Georgia Tech hosted, in conjunction with NextFlex, the Flexible Hybrid Electronics Manufacturing Innovation Institute, a workshop that focused on expert presentations of state-of-the-art, along with the \u0026nbsp;defining a technical roadmap targeting on the power aspects of FHE device, called \u0026ldquo;Powering the Internet of Everything\u0026rdquo;.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe workshop, attended by nearly 90 Government, Industry, and Academic experts was held in the Marcus Nanotechnology Building on November 6 \u0026ndash; 8, 2017. The three-day event included invited talks, roadmapping, a student technical poster session, and guided tours of principal research and shared user laboratories where FHE related research, micro\/nano fabrication and microanalysis occur on the GT campus. Labs visited included mechanical and electrical testing, modeling and characterization; additive and 3D printing; device packaging; soft robotics and exoskeleton; organic photonics and electronics; and the IEN micro\/nano fabrication and microscopy laboratories, to name a few. Workshop attendees were able to get up a close up view to the interesting FHE projects in which students and faculty are engaged. At each stop in the tour students demonstrated their work and answered questions about their programs, from flexible batteries for IOT to robotic human augmentation exoskeletons, FHE-enabled wearables and human-machine interfaces, and more. \u0026nbsp;Of greatest interest to the participants were those technologies that had already been demonstrated in the GT labs and which are ready for prototyping and pilot scale manufacturing.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ETechnical sessions included; Power and Energy Systems Needs, Energy Harvesting Strategies, Energy Storage Strategies, Power Management Strategies, and Ultra-Low Power Electronics\/Sensors. Speakers were drawn from both government and private sectors, as well as academia. Speakers included participation from AT\u0026amp;T, IBM, NIH, Naval Surface Warfare Center, the Office of Naval Research, PARC, Silniva, Air Force Research Lab, Oak Ridge National Laboratory, Blue Spark Technologies, Analog Devices, Texas Instruments, and the Georgia Institute of Technology.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EFollowing the technical sessions, the Marcus Nanotechnology Building Atrium space filled to capacity for an evening reception and competitive student poster and demo session. With over 35 FHE projects on display, the judging team consisting of industry and government experts was challenged with determining the best posters based on the content, clarity and organization, and overall presentation. After the scores were tallied, it was announced that there was a three-way tie for first place, a second place winner, and a tie for third, with all of them winning monetary awards.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EBelow is a list of the winning poster titles and authors:\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003ETied for 1\u003Csup\u003Est\u003C\/sup\u003E\u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003E\u0026ldquo;Toward all-soft and fully-integrated microsystems: vertically integrated physical and chemical microsystems using gallium-based liquid metal and soft lithography\u0026rdquo;, \u003C\/em\u003EMin-gu Kim and Prof. Oliver Brand\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003E\u0026ldquo;Novel Architectures for Polymer Thermoelectric Devices for Energy Harvesting\u0026rdquo;, \u003C\/em\u003EAkanksha Menon, Kiarash Gordiz, and Prof. Shannon Yee\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003E\u0026ldquo;Soft, Fluidic Modulation of Skin Temperature\u0026rdquo;, \u003C\/em\u003EDonald J. Ward, Nil Z. Gurel, Prof. Omer T. Inan, and Frank L. Hammond\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003E2\u003Csup\u003End\u003C\/sup\u003E Place\u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003E\u0026ldquo;Self-powered Wide-frequency Flexible Triboelectric (SWIFT) Microphone\u0026rdquo;, \u003C\/em\u003EN. Arora, S. L. Zhang, M. Gupta, F. Shahmiri, D. Osorio, Y. Wang, Z. Wang, C. Zhang, T. Starner, B. Boots, ZL Wang, G. D. Abowd\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003ETied for 3\u003Csup\u003Erd\u003C\/sup\u003E\u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003E\u0026ldquo;Mm-wave Ultra-Long-Range Energy-Autonomous Printed RFID\u0026nbsp;\u0026nbsp;\u0026nbsp;\u0026nbsp;\u0026nbsp; Van-Atta Wireless Gas Sensors: at the Crossroads of 5G and IoT\u0026rdquo;, \u003C\/em\u003EJimmy Hester and Prof. Manos Tentzeris\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003E\u0026ldquo;Sensorized Pneumatic Muscles for Force and Stiffness Control\u0026rdquo;, Lucas O. Tiziani, Thomas W. Cahoon, and Frank L. Hammond III\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EAbout FHE at Georgia Tech:\u003C\/strong\u003E\u003Cbr \/\u003E\r\nLed by Prof. Suresh Sitaraman, the George W. Woodruff School of Mechanical Engineering, more than 30\u0026nbsp; researchers at Georgia Tech are involved in projects involving flexible electronics from the School of Mechanical Engineering, the School of Electrical and Computer Engineering, the School of Materials Science and Engineering, the H. Milton Stewart School of Industrial \u0026amp; Systems Engineering, the School of Chemical and Biomolecular Engineering, and the Wallace H. Coulter Department of Biomedical Engineering at Georgia Tech and Emory University. Several interdisciplinary research institutes at Georgia Tech are also involved in the projects, including the Institute for Electronics and Nanotechnology, Georgia Tech Manufacturing Institute, and the Institute for Materials.\u0026nbsp; The Office of Industry Collaboration and the College of Engineering are also actively engaged.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EAbout NextFlex:\u003C\/strong\u003E\u003Cbr \/\u003E\r\nFormed in 2015 through a cooperative agreement between the US Department of Defense (DoD) and FlexTech Alliance, NextFlex is a consortium of companies, academic institutions, non-profits and state, local and federal governments with a shared goal of advancing U.S. Manufacturing of FHE. By adding electronics to new and unique materials that are part of our everyday lives in conjunction with the power of silicon ICs to create conformable and stretchable smart products, FHE is ushering in an era of \u0026ldquo;electronics on everything\u0026rdquo; and advancing the efficiency of our world.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E- Christa M. Ernst\u003Cbr \/\u003E\r\n\u0026nbsp; {christa.ernst@ien.gatech.edu}\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"Georgia Tech and NextFlex \u2013 Flexible Hybrid Electronics Manufacturing Innovation Institute hosted a workshop to explore energy harvesting, energy storage, and power deliver \u0026 management approaches for Internet of Things."}],"uid":"27863","created_gmt":"2017-12-07 16:52:23","changed_gmt":"2017-12-08 13:24:14","author":"Christa Ernst","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2017-12-07T00:00:00-05:00","iso_date":"2017-12-07T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"599674":{"id":"599674","type":"image","title":"FlexTech Workshop Poster Winners","body":null,"created":"1512664655","gmt_created":"2017-12-07 16:37:35","changed":"1512665138","gmt_changed":"2017-12-07 16:45:38","alt":"","file":{"fid":"228610","name":"Flex Poster Session.jpg","image_path":"\/sites\/default\/files\/images\/Flex%20Poster%20Session.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/Flex%20Poster%20Session.jpg","mime":"image\/jpeg","size":18958,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Flex%20Poster%20Session.jpg?itok=k_t4HsbI"}},"599675":{"id":"599675","type":"image","title":"NextFlex Workshop Attendees","body":null,"created":"1512664825","gmt_created":"2017-12-07 16:40:25","changed":"1512664825","gmt_changed":"2017-12-07 16:40:25","alt":"","file":{"fid":"228611","name":"Flex Workshop.jpg","image_path":"\/sites\/default\/files\/images\/Flex%20Workshop.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/Flex%20Workshop.jpg","mime":"image\/jpeg","size":24344,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Flex%20Workshop.jpg?itok=6zQo7kO1"}}},"media_ids":["599674","599675"],"groups":[{"id":"213791","name":"3D Systems Packaging Research Center"},{"id":"198081","name":"Georgia Electronic Design Center (GEDC)"},{"id":"197261","name":"Institute for Electronics and Nanotechnology"},{"id":"1271","name":"NanoTECH"},{"id":"213771","name":"The Center for MEMS and Microsystems Technologies"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"42911","name":"Education"},{"id":"133","name":"Special Events and Guest Speakers"},{"id":"134","name":"Student and Faculty"},{"id":"136","name":"Aerospace"},{"id":"138","name":"Biotechnology, Health, Bioengineering, Genetics"},{"id":"140","name":"Cancer Research"},{"id":"141","name":"Chemistry and Chemical Engineering"},{"id":"153","name":"Computer Science\/Information Technology and Security"},{"id":"144","name":"Energy"},{"id":"145","name":"Engineering"},{"id":"154","name":"Environment"},{"id":"146","name":"Life Sciences and Biology"},{"id":"147","name":"Military Technology"},{"id":"149","name":"Nanotechnology and Nanoscience"}],"keywords":[{"id":"166968","name":"the Institute for Electronics and Nanotechnology"},{"id":"168380","name":"the School of Electrical and Computer Engineering"},{"id":"173625","name":"The School of Mechanical Engineering"},{"id":"168357","name":"The School of Materials Science and Engineering"},{"id":"12373","name":"flexible electronics"},{"id":"176438","name":"reception and poster session"},{"id":"176439","name":"FHE"},{"id":"173788","name":"NextFlex"},{"id":"107","name":"Nanotechnology"},{"id":"569","name":"bioengineering"},{"id":"560","name":"chemical engineering"},{"id":"58001","name":"the institute for materials"},{"id":"38351","name":"Advanced Manufacturing"},{"id":"173391","name":"Power Electronics"},{"id":"176440","name":"low-power electronics"},{"id":"167066","name":"sensors"},{"id":"10454","name":"biosensors"}],"core_research_areas":[{"id":"39441","name":"Bioengineering and Bioscience"},{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"},{"id":"39541","name":"Systems"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":["christa.ernst@ien.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"598750":{"#nid":"598750","#data":{"type":"news","title":"Fall 2017 Georgia Tech Institute for Electronics and Nanotechnology (IEN) Seed Grant Program Winners Announced","body":[{"value":"\u003Cp\u003EThe Institute for Electronics and Nanotechnology at Georgia Tech has announced the winners for the 2017 Fall Seed Grant Awards. The primary purpose of the IEN Seed Grant is to give first or second year graduate students in various disciplines working on original and un-funded research in micro- and nano-scale projects the opportunity to access the most advanced academic cleanroom space in the Southeast. In addition to accessing the high-level fabrication, lithography, and characterization tools in the labs, the students will have the opportunity to gain proficiency in cleanroom and tool methodology and to use the consultation services provided by research staff members of the IEN Advanced Technology Team.\u0026nbsp; In addition, the Seed Grant program gives faculty with novel research topics the ability to develop preliminary data in order to pursue follow-up funding sources.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe 4 winning projects, from a diverse group of engineering disciplines, were awarded a six-month block of IEN cleanroom and lab access time. In keeping with the interdisciplinary mission of IEN, the projects that will be enabled by the grants include research in materials, biomedicine, energy production, and microelectronics packaging applications.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe Fall 2017 IEN Seed Grant Award winners are:\u003C\/p\u003E\r\n\r\n\u003Cul\u003E\r\n\t\u003Cli\u003ESaswat Mishra (PI Woon-Hong Yeo, Woodruff School of Mechanical Engineering), \u003Cem\u003EStretchable Hybrid Electronics for Wireless Monitoring of Salivary Electrolytes Assays\u003C\/em\u003E\u003C\/li\u003E\r\n\t\u003Cli\u003EArith Rajapakse (PI Anna Erickson, Woodruff School of Mechanical Engineering), \u003Cem\u003EIonizing Radiation Detection Using a Vertically Aligned Carbon Nanotube Array Transistor\u003C\/em\u003E\u003C\/li\u003E\r\n\t\u003Cli\u003ENujhat Tasneem (PI Asif Khan, Electrical and Computer Engineering), \u003Cem\u003ECo-integration of Logic and Non-volatile Memory in Front-End-of-the-Line (FEOL) Processes\u003C\/em\u003E\u003C\/li\u003E\r\n\t\u003Cli\u003ECongshan Wan (PI Muhannad Bakir and Tom Gaylord, Electrical and Computer Engineering), \u003Cem\u003EFirst Circular Waveguide Grating-Via-Grating for Interlayer Optical Coupling\u003C\/em\u003E\u003C\/li\u003E\r\n\u003C\/ul\u003E\r\n\r\n\u003Cp\u003EAwardees will present the results of their research efforts at the annual IEN User Day in 2018.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EFor more information about IEN cleanroom facilities, research capabilities, and collaboration opportunities please visit www.ien.gatech.edu.\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"The 4 winning projects, from a diverse group of engineering disciplines, were awarded a six-month block of IEN cleanroom and lab access time. "}],"uid":"27863","created_gmt":"2017-11-14 13:59:34","changed_gmt":"2017-11-14 13:59:34","author":"Christa Ernst","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2017-11-14T00:00:00-05:00","iso_date":"2017-11-14T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"507811":{"id":"507811","type":"image","title":"IEN Seed Grant logo","body":null,"created":"1457114400","gmt_created":"2016-03-04 18:00:00","changed":"1475895270","gmt_changed":"2016-10-08 02:54:30","alt":"IEN Seed Grant logo","file":{"fid":"205936","name":"seed_grant_ien_pic_0.jpg","image_path":"\/sites\/default\/files\/images\/seed_grant_ien_pic_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/seed_grant_ien_pic_0.jpg","mime":"image\/jpeg","size":45984,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/seed_grant_ien_pic_0.jpg?itok=2uIfVuWh"}}},"media_ids":["507811"],"groups":[{"id":"213791","name":"3D Systems Packaging Research Center"},{"id":"198081","name":"Georgia Electronic Design Center (GEDC)"},{"id":"197261","name":"Institute for Electronics and Nanotechnology"},{"id":"1271","name":"NanoTECH"},{"id":"213771","name":"The Center for MEMS and Microsystems Technologies"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"134","name":"Student and Faculty"},{"id":"8862","name":"Student Research"},{"id":"138","name":"Biotechnology, Health, Bioengineering, Genetics"},{"id":"141","name":"Chemistry and Chemical Engineering"},{"id":"144","name":"Energy"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"}],"keywords":[{"id":"166968","name":"the Institute for Electronics and Nanotechnology"},{"id":"168380","name":"the School of Electrical and Computer Engineering"},{"id":"173625","name":"The School of Mechanical Engineering"},{"id":"107","name":"Nanotechnology"},{"id":"12373","name":"flexible electronics"},{"id":"5209","name":"carbon nanotubes"},{"id":"74491","name":"electro-optics"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003Edavid.gottfried@ien.gatech.edu\u003C\/p\u003E\r\n","format":"limited_html"}],"email":[],"slides":[],"orientation":[],"userdata":""}},"585164":{"#nid":"585164","#data":{"type":"news","title":"What\u0027s New @ GT in Packaging? Innovative EMI Isolation Structures","body":[{"value":"\u003Ch4\u003E\u003Cem\u003EGeorgia Tech and its industry partners have developed the most advanced package-level electromagnetic interference (EMI) shielding structures for emerging highly-miniaturized System Packages.\u003C\/em\u003E\u003C\/h4\u003E\r\n\r\n\u003Cp\u003EElectromagnetic interference (EMI) is defined as unwanted electrical or magnetic coupling between components in a module or system. Such coupling or cross-talk results to performance degradation and electromagnetic compatibility issues. With increased multi-functional integration and miniaturization of emerging consumer, IoT, and automotive electronics, component-level EMI shielding has become extremely important to prevent undesired electromagnetic (EM) coupling.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EEMI noise in traditional modules with large components is shielded by metallic cans or creating physical separation between them. Shielding with conformal metal coatings on overmolded packages has also been demonstrated. Component-level shielding has been developed with integrated via-based shields inside packages.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EIn contrast to the prior approaches described above, Georgia Tech team has recently pioneered innovative multi-layered structures for more effective EMI shielding. In the near field region, magnetic fields, generated from sources such as power inductors and transformers, have lower wave impedance and hence are difficult to be shielded with blanket sheets of a few micron thickness. To address this challenge, unique thin magnetic-nonmagnetic multi-layered structures, which lead to high shielding effectiveness, are developed. The primary shielding mechanism for such thin multi-layered shields is the multiple reflections that occur at interfaces between magnetic and conductive thin layers because of impedance mismatch. Furthermore, by employing copper as a conductive material, absorption loss also contributes to high shielding effectiveness.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe Georgia Tech team, in partnership with Tango Systems, has demonstrated this concept with ultra-thin (\u0026lt; 5 micron) multi-layered shield composed of copper (Cu), titanium (Ti), and nickel-iron (permalloy) for noise suppression of 100 kHz to 100 MHz from DC-DC converters as an example. In this frequency range, such multi-layer shields placed between two magnetic coils show higher isolation or less near-field inductive coupling than traditional shielding materials such as copper or nickel films. Multi-layered structures composed of Ti, Cu, and NiFe showed 59 dB isolation, or more than 20 dB shielding effectiveness, much greater than NiFe-Cu shield or the NiFe-Ti multi-layered structures. This approach is now extended for further improvement in shielding effectiveness performance by employing oxide layers such as alumina within the multi-layered structures.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EIn addition to those multi-layered shielding materials, Georgia Tech team has also been pioneering package-integrated copper via-trench structures for component-level shielding between sensitive RF components. Such shields are now custom-designed for isolation between transmission lines, RF inductors, also RF power amplifiers. Since undesired EM coupling occurs both from above and below the substrates, innovative trench shielding structures with through-substrate vias or micro-vias are designed and demonstrated with 2-4 GHz shielding of above 65 dB even with component separation of below 0.5 mm. Georgia Tech is now extending these trench-via array and multi-layered conductor structures to 5G and other mm-wave modules in the frequency range of 28 GHz to 39 GHz.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThis research is being performed in partnership with a large global team of material and tool companies and with support from several on-site industry engineers at Georgia Tech.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThis project is part of Georgia Tech industry consortium in System Scaling which includes about 40 end-user and supply chain companies and RF module companies.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EAbout the Authors\u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EAtom Watanabe is an ECE student pursuing his PhD under the advisement of Prof. Rao Tummala. His research focus is on 5G modules with advanced shielding structures. \u003Ca href=\u0022mailto:atom@gatech.edu\u0022\u003Eatom@gatech.edu\u0026nbsp;\u003C\/a\u003E\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EDr. P.M. Raj\u0026nbsp;is the Program Manager for Integrated Passive and Actives as well as High-Temp Electronics at Georgia Tech PRC.\u0026nbsp;\u003Ca href=\u0022mailto:raj@ece.gatech.edu\u0022\u003Eraj@ece.gatech.edu\u003C\/a\u003E\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EProf. Rao Tummala is Joseph. M. Pettit Chair Professor in ECE and MSE and Director of Georgia Tech\u0026rsquo;s Packaging Research Center. \u003Ca href=\u0022mailto:rao.tummala@ece.gatech.edu\u0022\u003Erao.tummala@ece.gatech.edu\u003C\/a\u003E.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026nbsp;\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"Georgia Tech and its industry partners have developed the most advanced package-level electromagnetic interference (EMI) shielding structures for emerging highly-miniaturized System Packages."}],"uid":"27850","created_gmt":"2016-12-15 22:05:42","changed_gmt":"2016-12-15 22:21:14","author":"Karen May","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2016-12-15T00:00:00-05:00","iso_date":"2016-12-15T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"585163":{"id":"585163","type":"image","title":"Multi-layered metal films with better shielding than copper.","body":null,"created":"1481839263","gmt_created":"2016-12-15 22:01:03","changed":"1481839263","gmt_changed":"2016-12-15 22:01:03","alt":"","file":{"fid":"223093","name":"Multi-layered metal films - 600 x 338.png","image_path":"\/sites\/default\/files\/images\/Multi-layered%20metal%20films%20-%20600%20x%20338.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/Multi-layered%20metal%20films%20-%20600%20x%20338.png","mime":"image\/png","size":161343,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Multi-layered%20metal%20films%20-%20600%20x%20338.png?itok=b7hagKrF"}},"585161":{"id":"585161","type":"image","title":"Integrated component-level shields with Cu trench and via arrays","body":null,"created":"1481839154","gmt_created":"2016-12-15 21:59:14","changed":"1481839173","gmt_changed":"2016-12-15 21:59:33","alt":"","file":{"fid":"223092","name":"Component Level Shielding - 600x338.png","image_path":"\/sites\/default\/files\/images\/Component%20Level%20Shielding%20-%20600x338.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/Component%20Level%20Shielding%20-%20600x338.png","mime":"image\/png","size":588577,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Component%20Level%20Shielding%20-%20600x338.png?itok=LectpG7Y"}}},"media_ids":["585163","585161"],"groups":[{"id":"213791","name":"3D Systems Packaging Research Center"},{"id":"1237","name":"College of Engineering"},{"id":"197261","name":"Institute for Electronics and Nanotechnology"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"42911","name":"Education"},{"id":"134","name":"Student and Faculty"},{"id":"8862","name":"Student Research"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"}],"keywords":[{"id":"4127","name":"PRC"},{"id":"12104","name":"Packaging Research Center"},{"id":"12103","name":"Rao Tummala"},{"id":"173041","name":"Raj Pulugurtha"},{"id":"173042","name":"P. M. Raj"},{"id":"173043","name":"EMI Shields"},{"id":"173044","name":"EMI Isolation Structures"},{"id":"173036","name":"EMI"},{"id":"168849","name":"microsystem packaging"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[{"id":"71881","name":"Science and Technology"}],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EKaren May\u003C\/p\u003E\r\n\r\n\u003Cp\u003EMarketing \u0026amp; Communications Coordinator\u003C\/p\u003E\r\n\r\n\u003Cp\u003EPackaging Research Center\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Ca href=\u0022mailto:karen.may@ece.gatech.edu\u0022\u003Ekaren.may@ece.gatech.edu\u003C\/a\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E(404) 385-1220\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["karen.may@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"584058":{"#nid":"584058","#data":{"type":"news","title":"What is New @ GT in Packaging? Advanced Molding Compounds for Fan-out and High-temperature Automotive Electronics","body":[{"value":"\u003Ch4\u003E\u003Cem\u003EGeorgia Tech and its industry partners are developing a new class of molding compounds with superior thermal stability and reliability up to 250\u0026deg;C for a variety of applications, including high-power automotive electronics, and wafer and panel fan-out packages.\u003C\/em\u003E\u003C\/h4\u003E\r\n\r\n\u003Cp\u003EHigh-temperature performance of molding compounds is becoming a key bottleneck for least three reasons: 1) integrated power modules with wide-bandgap (WBG) switches, gate drivers and controllers with ultra-high power densities, leading to escalating package temperatures; 2) under-the-hood automotive electronics; and 3) improvements in molded wafer and panel fan-out packages to address die drift, shrinkage and warpage issues.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ETraditional molding compounds are limited to temperatures below 175\u0026deg;C. Although a number of polymer materials such as polyimide, cyanate ester, and benzocyclobutene (BCB) polymers offer high-temperature stability, epoxies are still the preferred choice because of several advantages that include excellent interfacial adhesion, low moisture absorption, excellent molding processibility and low cost. Recent advances include incorporation of multi-aromatic structures in the epoxy resin to enhance thermal stability of the cured composite. However, undesirable changes in material properties such as resin decomposition and the loss of volatile species become inevitable. Loss in mechanical toughness and oxidative-degradation still remain as the other major limitations with epoxies.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe Georgia Tech team, which includes polymer chemists, package processing and reliability experts, is developing higher temperature molding compounds with higher thermal stability stability, higher thermal conductivity, enhanced fracture toughness, and improved resistance to oxidative-degradation. Thermal stability of epoxies is being enhanced by incorporating thermally-stable functionalities derived from cyanate esters. The thermal conductivity of molding compounds is being enhanced with functionalized boron nitride fillers, while the fracture toughness of molding compounds is being enhanced with rubber-coated silica fillers that serve as crack-energy absorbers. The simultaneous synergy of enhancing the thermal stability, thermal conductivity and crack resistance provides unique opportunities to develop high-performance epoxy molding compounds to address some of the limitations of current wafer and panel fan-out packages as well as emerging high-power automotive electronics.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EIn addition to synthesizing the high-temperature molding compounds, the ongoing project will also focus on thermo-mechanical reliability including fracture characterization at various material interfaces up to 250\u0026deg;C. Thermo-mechanical models are also being used to determine stress\/strain distribution as well as energy available for crack propagation in packages that use high-temperature mold compounds. Such models will be used to obtain design guidelines for high-temperature applications.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThis project is part of Georgia Tech industry consortium in System Scaling which includes about 40 end-user and supply chain companies.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EAbout the Authors\u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EChia-Chi Tuan is a PhD student under the advisement of Prof. CP Wong. Her research focus is on epoxy-based polymer composites. \u003Ca href=\u0022mailto:chiachituan@gatech.edu\u0022\u003Echiachituan@gatech.edu\u003C\/a\u003E. \u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EDr. Jack Moon is a Research Engineer at the School of Materials Science and Engineering at Georgia Tech. \u003Ca href=\u0022mailto:jack.moon@gatech.edu\u0022\u003Ejack.moon@gatech.edu\u003C\/a\u003E.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EProf. CP Wong is the Regents\u0026#39; Professor and Smithgall Institute Endowed Chair at the School of Materials Science and Engineering at Georgia Tech. \u003Ca href=\u0022mailto:cp.wong@mse.gatech.edu\u0022\u003Ecp.wong@mse.gatech.edu\u003C\/a\u003E.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EProf. Suresh Sitaraman is Morris M. Bryan Jr. Professor with George W. Woodruff School of Mechanical Engineering at Georgia Tech. \u003Ca href=\u0022mailto:suresh.sitaraman@me.gatech.edu\u0022\u003Esuresh.sitaraman@me.gatech.edu\u003C\/a\u003E.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EDr. Raj Pulugurtha is a Research Professor and Program Manager of RF, Power and High-Temperature Materials at GT PRC. \u003Ca href=\u0022mailto:raj.pulugurtha@ece.gatech.edu\u0022\u003Eraj.pulugurtha@ece.gatech.edu\u003C\/a\u003E. \u0026nbsp;\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EProf. Rao Tummala is Joseph. M. Pettit Chair Professor in ECE and MSE and Director of Georgia Tech\u0026rsquo;s Packaging Research Center. \u003Ca href=\u0022mailto:rao.tummala@ece.gatech.edu\u0022\u003Erao.tummala@ece.gatech.edu\u003C\/a\u003E.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026nbsp;\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"Georgia Tech and its industry partners are developing a new class of molding compounds with superior thermal stability and reliability up to 250\u00b0C"}],"uid":"27850","created_gmt":"2016-11-21 14:15:58","changed_gmt":"2016-12-05 16:06:34","author":"Karen May","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2016-11-17T00:00:00-05:00","iso_date":"2016-11-17T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"584061":{"id":"584061","type":"image","title":"Advanced high-temperature epoxy molding compound structure for improved thermal stability, thermal dissipation, fracture toughness and mechanical reliability, at Georgia Tech.","body":null,"created":"1479738238","gmt_created":"2016-11-21 14:23:58","changed":"1479738287","gmt_changed":"2016-11-21 14:24:47","alt":"Advanced high-temperature epoxy molding compound structure for improved thermal stability, thermal dissipation, fracture toughness and mechanical reliability, at Georgia Tech.","file":{"fid":"222664","name":"expoxy molding compounds-Final-02.png","image_path":"\/sites\/default\/files\/images\/expoxy%20molding%20compounds-Final-02.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/expoxy%20molding%20compounds-Final-02.png","mime":"image\/png","size":222096,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/expoxy%20molding%20compounds-Final-02.png?itok=zd0qxxf9"}}},"media_ids":["584061"],"groups":[{"id":"213791","name":"3D Systems Packaging Research Center"},{"id":"1237","name":"College of Engineering"},{"id":"197261","name":"Institute for Electronics and Nanotechnology"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"42911","name":"Education"},{"id":"134","name":"Student and Faculty"},{"id":"8862","name":"Student Research"},{"id":"135","name":"Research"},{"id":"153","name":"Computer Science\/Information Technology and Security"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"}],"keywords":[{"id":"4127","name":"PRC"},{"id":"12103","name":"Rao Tummala"},{"id":"172761","name":"CP Wong"},{"id":"169475","name":"Suresh Sitaraman"},{"id":"172758","name":"expoxy molding"},{"id":"168580","name":"Automotive Electronics"},{"id":"172762","name":"molding compounds"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[{"id":"71881","name":"Science and Technology"}],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EKaren May\u003C\/p\u003E\r\n\r\n\u003Cp\u003EMarketing \u0026amp; Communications Coordinator\u003C\/p\u003E\r\n\r\n\u003Cp\u003EPackaging Research Center\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Ca href=\u0022mailto:karen.may@ece.gatech.edu\u0022\u003Ekaren.may@ece.gatech.edu\u003C\/a\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E(404) 385-1220\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["karen.may@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"584610":{"#nid":"584610","#data":{"type":"news","title":"What is New @ GT in Packaging? Ultra-thin Dry Film Polymer Materials and Processes for High Density 2.5D and Fanout Packages","body":[{"value":"\u003Ch4\u003E\u003Cem\u003EGeorgia Tech and its industry partners are developing the next generation of ultra-thin polymers to form 20-40\u0026micro;m pitch RDL for 2.5D and fan-out packages.\u003C\/em\u003E\u003C\/h4\u003E\r\n\r\n\u003Cp\u003EAdvanced polymer materials are the key to high density packaging by enabling ultra-small vias and wiring layers to achieve 50 ohm impedance RDL wiring layers.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ETraditional polymer dielectrics are thicker films (\u0026gt;20\u0026micro;m) and thus are unsuitable to RDL wiring layers at fine pitch and at 50 ohm impedance. Although liquid spin-on polymers such as Polyimide and PBO have been used widely in wafer level packaging, such materials are difficult to apply as thin dry films on large panels.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EIn contrast to these materials, Georgia Tech and its industry partners have been developing ultra-thin (3-10\u0026micro;m) dry film polymer materials and associated RDL via and line formation processes. Ultra-thin polymer dry films provide added benefits of better thickness control, improved planarization on underlying copper, large panel processing, and environmental friendliness. The Georgia Tech program involves a number of material partners in photo-sensitive from TOK Japan, dry film BCB from Dow Chemical, as well as non-photo dry film dielectrics from Ajinomoto Japan. The Georgia Tech programs that benefit from these polymer dielctrics include all digital applications using glass, advanced laminates and ceramic substrates.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe Georgia Tech team has demonstrated wafer and panel substrates with 2\u0026micro;m lines and spaces by advanced semi-additive processes (SAP) using 7\u0026micro;m thin dry film photo resists and projection lithography tool provided by Ushio Japan. Wafer and panel metallization was performed using a 300 mm panel plating line at Georgia Tech installed by Atotech, Germany. Various approaches are being investigated to demonstrate ultra-small micro-vias below 10\u0026micro;m including solid state UV laser, using a CornerStone\u0026trade; system installed at Georgia Tech by ESI, excimer laser ablation supported by Suss Photonic Systems, photo lithography processes with advanced dry films provided by TOK Japan, Dow Chemical and other partners. By combining these materials and processes, multi-layer structures with 10\u0026micro;m vias and 2.5\u0026micro;m lines and spaces were successfully demonstrated to fabricate a 2.5D logic-HBM emulator designed with guidance from IBM\/GlobalFoundries, AMD, Intel and others (top figure).\u003C\/p\u003E\r\n\r\n\u003Cp\u003ETo address the limitations of SAP processes in pitch scaling,a novel via-in-trench (VIT) and via-in-line (VIL) embedded trench+via methods have been invented and demonstrated to achieve ultra-small liness and vias on large panels. Advantages of the embedded approach are the elimination of seed etching processes and the formation of conductive wires with higher aspect ratios for better electrical conductivity. Two different approaches are studied in the Georgia Tech program; excimer laser ablation by Suss Photonic Systems with non-photo polymer dielectrics and photolithography with photo-polymers. After the trench and via formation, trench and via fill plating from Atotech and a low-cost surface planarization process (tool installed at Georgia Tech by Disco Japan) to remove copper overburden were used to metallize the fine pitch RDL. Using this approach, 2\u0026micro;m lines and spaces with embedded vias have been successfully demonstrated (bottom figure).This is one of the first demonstrations of silicon-like RDL that Georgia Tech team achieved using glass panels with potential for lower cost Cu-polymer RDL materials and processes.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThis research is being performed in partnership with a large global team of material and tool companies and with support from several on-site industry engineers at Georgia Tech.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThis project is part of Georgia Tech industry consortium in System Scaling which includes about 40 end-user and supply chain companies.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EAbout the Authors\u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003EYuya Suzuki is a PhD student under the advisement of Prof. Rao Tummala. His research focus is on thin film dielectrics and small micro-vias. \u003Ca href=\u0022mailto:ysuzuki3@mail.gatech.edu\u0022\u003Eysuzuki3@mail.gatech.edu\u003C\/a\u003E.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EFuhan Liu is the Assistant Program Manager for Electronic and Photonic Substrates at Georgia Tech PRC. \u003Ca href=\u0022mailto:fliu@ece.gatech.edu\u0022\u003Efliu@ece.gatech.edu\u003C\/a\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003EDr. Venky Sundaram is the Program Manager of Substrate Programs and Associate Director of Industry Programs at Georgia Tech PRC. \u003Ca href=\u0022mailto:vs24@mail.gatech.edu\u0022\u003Evs24@mail.gatech.edu\u003C\/a\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EProf. Rao Tummala is Joseph. M. Pettit Chair Professor in ECE and MSE and Director of Georgia Tech\u0026rsquo;s Packaging Research Center. \u003Ca href=\u0022mailto:rao.tummala@ece.gatech.edu\u0022\u003Erao.tummala@ece.gatech.edu\u003C\/a\u003E.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u0026nbsp;\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"Georgia Tech and its industry partners are developing the next generation of ultra-thin polymers to form 20-40\u00b5m pitch RDL for 2.5D and fan-out packages."}],"uid":"27850","created_gmt":"2016-12-05 15:39:58","changed_gmt":"2016-12-05 15:56:54","author":"Karen May","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2016-12-01T00:00:00-05:00","iso_date":"2016-12-01T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"584617":{"id":"584617","type":"image","title":"Multi-layer RDL demonstration with 2.5\u00b5m lines and 10\u00b5m vias by excimer laser ablation by Suss Microtech and SAP process at Georgia Tech.","body":null,"created":"1480953158","gmt_created":"2016-12-05 15:52:38","changed":"1480953158","gmt_changed":"2016-12-05 15:52:38","alt":"","file":{"fid":"222902","name":"multi-layer RDL 496 x 358.jpg","image_path":"\/sites\/default\/files\/images\/multi-layer%20RDL%20496%20x%20358.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/multi-layer%20RDL%20496%20x%20358.jpg","mime":"image\/jpeg","size":129106,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/multi-layer%20RDL%20496%20x%20358.jpg?itok=P3AMqgKw"}},"584619":{"id":"584619","type":"image","title":"RDL demonstration with 2.5\u00b5m line and 2.5\u00b5m via line by embedded trench\/via process in photo-sensitive IF 4600 dry films from TOK Japan.","body":null,"created":"1480953260","gmt_created":"2016-12-05 15:54:20","changed":"1480953260","gmt_changed":"2016-12-05 15:54:20","alt":"","file":{"fid":"222904","name":"RDL Demonstration 400 x 179.jpg","image_path":"\/sites\/default\/files\/images\/RDL%20Demonstration%20400%20x%20179.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/RDL%20Demonstration%20400%20x%20179.jpg","mime":"image\/jpeg","size":81834,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/RDL%20Demonstration%20400%20x%20179.jpg?itok=xIGZzRqG"}}},"media_ids":["584617","584619"],"groups":[{"id":"213791","name":"3D Systems Packaging Research Center"},{"id":"1237","name":"College of Engineering"},{"id":"197261","name":"Institute for Electronics and Nanotechnology"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"42911","name":"Education"},{"id":"134","name":"Student and Faculty"},{"id":"8862","name":"Student Research"},{"id":"135","name":"Research"},{"id":"153","name":"Computer Science\/Information Technology and Security"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"}],"keywords":[{"id":"4127","name":"PRC"},{"id":"12104","name":"Packaging Research Center"},{"id":"12103","name":"Rao Tummala"},{"id":"172859","name":"Venky Sundaram"},{"id":"172860","name":"Fuhan Liu"},{"id":"172861","name":"Yuya Suzuki"},{"id":"172862","name":"ultra-thin dry film polymer materials"},{"id":"172863","name":"ultra-thin polymers"},{"id":"172377","name":"fan-out packages"},{"id":"77001","name":"2.5D Packages"},{"id":"172864","name":"multi-layer RDL"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[{"id":"71881","name":"Science and Technology"}],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EKaren May\u003C\/p\u003E\r\n\r\n\u003Cp\u003EMarketing \u0026amp; Communications Coordinator\u003C\/p\u003E\r\n\r\n\u003Cp\u003EPackaging Research Center\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Ca href=\u0022mailto:karen.may@ece.gatech.edu\u0022\u003Ekaren.may@ece.gatech.edu\u003C\/a\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E(404) 385-1220\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["karen.may@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"582675":{"#nid":"582675","#data":{"type":"news","title":"What is New @ GT in Packaging? 5G and mm-wave Packaging","body":[{"value":"\u003Ch4\u003E\u003Cem\u003EGeorgia Tech and its industry partners are developing 5G and mm-wave packaging using ultra-thin Glass panel Fan-out technology with 10-100X improvement in bandwidth for consumer, computer, communication and automotive applications.\u003C\/em\u003E\u003C\/h4\u003E\r\n\r\n\u003Cp\u003EThe explosive growth of data traffic from increasing number of digital and sensor devices, connected to the network, and the escalating demand for self-driving cars requiring both long-range vehicle-to-network and short-range vehicle-to-vehicle connectivity, has created a need for 10-100X increase in wireless data communication rates beyond current 4G LTE connectivity. This extreme traffic density requires high-frequency mobile bands, much beyond WLAN at 6 GHz, requiring mm-wave (e.g., 28-39 GHz and above) communications. Many challenges in achieving these goals such as those associated with system-level design, materials, processes, antennas and module integration must be addressed.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ETraditional mm-wave packages are based on ceramic substrates. The high cost and low-integration limitations of ceramics have led to the evolution of organic packages. A fully-integrated antenna-in-package (AiP) for W-band phased-array system, with 64 dual-polarization antennas embedded in a multi-layer organic substrate, with SiGe transceiver dies that are flipchip-attached has been demonstrated by IBM. In addition, ultra-low loss organic substrates using Teflon and LCPs were explored with high gains and high bandwidth. The evolution of embedded and fan-out wafer level ball grid array package technology (eWLB) further enhanced the performance of mm-wave packages by eliminating the wirebonds, as demonstrated by Infineon technologies, with SiGe-BiCMOS technology. However, organic laminates and molding-compound based fan-outs are limited by the precision and tolerance of circuitry for mm-wave components.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EIn contrast to the above approaches for 5G and beyond, Georgia Tech and its industry partners are pioneering ultra-thin, panel-based glass fan-out (GFO) embedded technology. GFO offers many advantages such as low electrical loss, superior dimensional stability for precision circuitry, stability to high temperature and humidity, matched CTE to Si and other devices and availability in thin and large glass panels processed with Cu-through vias, similar in dimensions to TSVs and RDL wiring layers, and similar to BEOL on Si. The Georgia Tech approach leads to major design, material, process and 3D package architecture innovations.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ESome of the key research innovations of the Georgia Tech 5G and beyond program include:\u003C\/p\u003E\r\n\r\n\u003Col\u003E\r\n\t\u003Cli\u003ELow-loss transmission with innovative waveguide structures on glass substrates with insertion losses approaching 0.05 dB\/mm.\u003C\/li\u003E\r\n\t\u003Cli\u003EFormation of precision circuitry enabled by high dimensional stability and surface smoothness of glass resulting in further lowering of the losses.\u003C\/li\u003E\r\n\t\u003Cli\u003EMiniaturized and high bandwidth, high gain antenna arrays enabled by glass, in combination with ultra-low loss thinfilm polymers with initial results indicating that the bandwidth can be improved by 20% with a gain of 10 dBi than those on organic substrates.\u003C\/li\u003E\r\n\t\u003Cli\u003EFormation of via arrays in glass with double-side interconnections enabling compact passive elements such as couplers and filters.\u003C\/li\u003E\r\n\t\u003Cli\u003EIntegrated power amplifiers with thermal management using large copper through-via structures in glass thus eliminating the hotspots and reliability issues with embedded high-power dies.\u003C\/li\u003E\r\n\t\u003Cli\u003EFeasibility of transparent RF electronics enabled by transparent glass substrates, transparent dielectrics and conductors in automotive windshields and windows.\u003C\/li\u003E\r\n\t\u003Cli\u003EInnovative materials and processes such as 3D printing on flex substrates being pioneered by Georgia Tech for low-cost IoT applications.\u003C\/li\u003E\r\n\t\u003Cli\u003EInnovative module integration of passives and actives with ultra-short interconnection length and ultra-small-vias in glass, resulting in very low via inductance, less than 50 pH and via-related transition losses, to less than 0.03 dB.\u003C\/li\u003E\r\n\u003C\/ol\u003E\r\n\r\n\u003Cp\u003EThe 5G project is currently active in collaboration with many industry partners, including glass companies such as Corning Glass, Asahi Glass, and Schott Glass, supplying the ultra-thin glass panels; low-loss dielectric material suppliers such as Rogers; tool companies such as Ushio for precision lithography; Disco for planarization and dicing; Atotech for supplying the plating chemistry for advanced metallization processes; and end-users like Qualcomm.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EAbout the Authors\u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EAtom Watanabe is a PhD student under the advisement of Prof. Rao Tummala. His research focus is on EMI shielding and mm-wave module integration; \u003Ca href=\u0022mailto:atom@gatech.edu\u0022\u003Eatom@gatech.edu\u003C\/a\u003E.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EProf. Manos Tentzeris, Ken Byers Professor in ECE Department, Georgia Tech, is the faculty lead for the mm-wave program; \u003Ca href=\u0022mailto:etentze@ece.gatech.edu\u0022\u003Eetentze@ece.gatech.edu\u003C\/a\u003E.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EProf. Rao Tummala is the Joseph M. Pettit Chair Professor in ECE and MSE, and the Director of Georgia Tech\u0026rsquo;s 3D Systems Packaging Research Center (GT PRC); \u003Ca href=\u0022mailto:rao.tummala@ece.gatech.edu\u0022\u003Erao.tummala@ece.gatech.edu\u003C\/a\u003E.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EDr. Raj Pulugurtha is a Research Professor and the Program Manager of Power and RF Module Programs; \u003Ca href=\u0022mailto:pm86@mail.gatech.edu\u0022\u003Epm86@mail.gatech.edu\u003C\/a\u003E.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EDr. Venky Sundaram is a Research Professor and the Program Manager of Glass Substrate Program; \u003Ca href=\u0022mailto:vs24@mail.gatech.edu\u0022\u003Evs24@mail.gatech.edu\u003C\/a\u003E.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003E\u0026nbsp;\u003C\/em\u003E\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"Georgia Tech and its industry partners are developing 5G and mm-wave packaging using ultra-thin Glass panel Fan-out technology"}],"uid":"27850","created_gmt":"2016-10-17 18:01:37","changed_gmt":"2016-10-17 18:07:51","author":"Karen May","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2016-10-17T00:00:00-04:00","iso_date":"2016-10-17T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"582677":{"id":"582677","type":"image","title":"Printed mm-wave antenna arrays at Georgia Tech","body":null,"created":"1476727542","gmt_created":"2016-10-17 18:05:42","changed":"1476727542","gmt_changed":"2016-10-17 18:05:42","alt":"","file":{"fid":"222117","name":"Printed mm-wave antenna arrays at Georgia Tech PRC.png","image_path":"\/sites\/default\/files\/images\/Printed%20mm-wave%20antenna%20arrays%20at%20Georgia%20Tech%20PRC.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/Printed%20mm-wave%20antenna%20arrays%20at%20Georgia%20Tech%20PRC.png","mime":"image\/png","size":295936,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Printed%20mm-wave%20antenna%20arrays%20at%20Georgia%20Tech%20PRC.png?itok=T_7Y4BV-"}},"582676":{"id":"582676","type":"image","title":"mm-Wave Characterization of transmission lines on glass with TPVs ","body":null,"created":"1476727467","gmt_created":"2016-10-17 18:04:27","changed":"1476727467","gmt_changed":"2016-10-17 18:04:27","alt":"","file":{"fid":"222116","name":"mm-Wave Characterization of transmission lines on glass with TPVs - Georgia Tech PRC.png","image_path":"\/sites\/default\/files\/images\/mm-Wave%20Characterization%20of%20transmission%20lines%20on%20glass%20with%20TPVs%20-%20Georgia%20Tech%20PRC.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/mm-Wave%20Characterization%20of%20transmission%20lines%20on%20glass%20with%20TPVs%20-%20Georgia%20Tech%20PRC.png","mime":"image\/png","size":70259,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/mm-Wave%20Characterization%20of%20transmission%20lines%20on%20glass%20with%20TPVs%20-%20Georgia%20Tech%20PRC.png?itok=O3tkOn7G"}}},"media_ids":["582677","582676"],"groups":[{"id":"1237","name":"College of Engineering"},{"id":"197261","name":"Institute for Electronics and Nanotechnology"},{"id":"213791","name":"3D Systems Packaging Research Center"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"42911","name":"Education"},{"id":"134","name":"Student and Faculty"},{"id":"8862","name":"Student Research"},{"id":"135","name":"Research"},{"id":"153","name":"Computer Science\/Information Technology and Security"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"}],"keywords":[{"id":"4127","name":"PRC"},{"id":"12103","name":"Rao Tummala"},{"id":"172364","name":"5G"},{"id":"172479","name":"mm-wave packaging"},{"id":"172482","name":"antennea array"},{"id":"2621","name":"radar"},{"id":"62321","name":"Automotive"},{"id":"172480","name":"GFO"},{"id":"172481","name":"glass fanout"},{"id":"172373","name":"glass fan-out"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[{"id":"71881","name":"Science and Technology"}],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EKaren May\u003C\/p\u003E\r\n\r\n\u003Cp\u003EMarketing \u0026amp; Communications Coordinator\u003C\/p\u003E\r\n\r\n\u003Cp\u003EPackaging Research Center\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Ca href=\u0022mailto:karen.may@ece.gatech.edu\u0022\u003Ekaren.may@ece.gatech.edu\u003C\/a\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E(404) 385-1220\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["karen.may@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"581920":{"#nid":"581920","#data":{"type":"news","title":"What is New @ GT in Packaging? 3D Glass Photonics ","body":[{"value":"\u003Ch4\u003E\u003Cem\u003EGeorgia Tech and its industry partners demonstrate 3D Glass Photonics for ultra-high bandwidth, low cost and low power.\u003C\/em\u003E\u003C\/h4\u003E\r\n\r\n\u003Cp\u003EThe proliferation of mobile devices, feeding the data to the cloud, has resulted in an unprecedented increase in global data traffic; projected to double to about six Exabytes (10\u003Csup\u003E18\u003C\/sup\u003E) per day by 2020. Electrical interconnects are limited for many reasons including device leakage, propagation delay, signal-to-signal crosstalk, reflection and others. Optical interconnects are immune to these and being photonic-based, are capable of meeting the above high bandwidth requirements. Unlike in long-distance telecommunications, short-distance bandwidth requires careful balance between performance, power and cost.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ESilicon photonics and board-level optoelectronics are being intensely explored by the industry. Silicon photonics promises the highest potential by combining photonics and electronics onto a single die, using CMOS-compatible processes. Board-level optoelectronics, on the other hand, utilize low-cost board substrate process technologies to create Optical Printed Circuit Boards (O-PCB).\u003C\/p\u003E\r\n\r\n\u003Cp\u003EIn contrast to these above approaches, Georgia Tech proposed and developed a very innovative 3D glass photonics (3DGP) technology, not at device or board-level, as with silicon and board-level photonics, but at package-level. It is a lower cost and low power alternative to silicon photonics and board-level optoelectronics. In addition, it is a 3D concept using glass with an ultra-short photonic\u0026nbsp;via interconnection. Glass offers a unique combination of optical, electrical, thermo-mechanical and dimensional-stability properties for precision alignments, and large-area panel processability for low cost, unmatched by other materials. Optically, the refractive index of glass can match that of glass optical fibers to enable low-loss light coupling. Electrically, the low-loss tangent of glass is far superior to that of silicon. Mechanically, the Coefficient of Thermal Expansion (CTE) of glass matches silicon and other devices, thus improving the system-level reliability. The low surface roughness and high dimensional stability of glass is capable of 1\u0026micro;m and below features similar to back end of line (BEOL) silicon processes, for high interconnect density and precise coupling to optical fibers. Lastly, glass has the potential for low cost by virtue of large panel manufacturing\u003C\/p\u003E\r\n\r\n\u003Cp\u003ERecently, Georgia Tech\u0026rsquo;s 3DGP program demonstrated a 400 Gbps optical transceiver module. This test vehicle featured optimized electrical interconnects at \u0026lt; 0.1 dB\/mm insertion loss, thermal interconnects to keep laser temperature under 80\u0026ordm;C, and novel optical interconnections comprising of planar optical waveguides, 3D vertical optical vias, 45\u0026ordm; turning mirrors, and fiber alignment grooves in glass. These novel optical interconnections resulted in \u0026lt; 2 dB coupling loss with high-density out-of-plane turning, and alignment tolerance on par with fiber-to-fiber coupling.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe Georgia Tech industry consortium is unique in the academic world. It involves partnership with end-user and supply chain companies, resulting in accelerated 3DGP technology development. The end-users include TE Connectivity and Ciena Corp.; and supply chain companies include Corning Glass, Asahi Glass, and Schott Glass for supplying the ultra-thin glass panels with vias or cavities; Dow-Chemical for polymers; Ushio for placing a lithographic tool at Georgia Tech to enable micro-mirror formation; Atotech for supplying the chemistry for advanced metallization processes; Microchem for supplying optical polymers; and DISCO for placing a dicing tool at Georgia Tech to enable fiber alignment groove formation.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EAbout the Authors\u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EBruce Chou, is graduating in Fall 2016 with his PhD under the advisement of Prof. Rao Tummala. His research focus is on Design and Demonstration of 3D Glass Photonics. \u003C\/em\u003E\u003Ca href=\u0022mailto:cchou36@gatech.edu\u0022\u003Ecchou36@gatech.edu\u003C\/a\u003E\u003Cem\u003E.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EProf. Rao Tummala is Joseph. M. Pettit Chair Professor in ECE and MSE and Director of Georgia Tech\u0026rsquo;s Packaging Research Center. \u003C\/em\u003E\u003Ca href=\u0022mailto:rao.tummala@ece.gatech.edu\u0022\u003E\u003Cem\u003Erao.tummala@ece.gatech.edu\u003C\/em\u003E\u003C\/a\u003E\u003Cem\u003E.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EDr. Fuhan Liu is a Research Professor and\u0026nbsp;Program Manager of Glass Photonics Program at GT PRC\u0026nbsp;\u003C\/em\u003E\u003Ca href=\u0022mailto:fuhan.liu@ece.gatech.edu\u0022\u003Efuhan.liu@ece.gatech.edu\u003C\/a\u003E.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EDr. Venky Sundaram is a Research Professor and Associate Director of Industry Programs at GT PRC \u003C\/em\u003E\u003Ca href=\u0022mailto:vs24@mail.gatech.edu\u0022\u003Evs24@mail.gatech.edu\u003C\/a\u003E\u003Cem\u003E.\u0026nbsp;\u003C\/em\u003E\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"Georgia Tech and its industry partners demonstrate 3D Glass Photonics for ultra-high bandwidth, low cost and low power."}],"uid":"27850","created_gmt":"2016-09-29 19:46:52","changed_gmt":"2016-10-10 14:14:21","author":"Karen May","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2016-09-29T00:00:00-04:00","iso_date":"2016-09-29T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"582312":{"id":"582312","type":"image","title":"400 Gbps optical transceiver test vehicles based on 3D glass photonics technology using low-cost processes and co-designed for optimum optical, electrical, and thermal interfaces.","body":null,"created":"1476108409","gmt_created":"2016-10-10 14:06:49","changed":"1476108798","gmt_changed":"2016-10-10 14:13:18","alt":"400 Gbps optical transeiver","file":{"fid":"221975","name":"400 Gbps optical transeiver FINAL 928 x 522.png","image_path":"\/sites\/default\/files\/images\/400%20Gbps%20optical%20transeiver%20FINAL%20928%20x%20522.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/400%20Gbps%20optical%20transeiver%20FINAL%20928%20x%20522.png","mime":"image\/png","size":695235,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/400%20Gbps%20optical%20transeiver%20FINAL%20928%20x%20522.png?itok=8p9c782S"}},"582313":{"id":"582313","type":"image","title":"Novel optical interconnection in glass featuring 45\u00ba turning mirror, planar waveguide, and gold pads aligned directly to the turning mirror to maximize alignment tolerance.","body":null,"created":"1476108470","gmt_created":"2016-10-10 14:07:50","changed":"1476108821","gmt_changed":"2016-10-10 14:13:41","alt":"Novel optical interconnection in glass","file":{"fid":"221976","name":"Novel optical interconnection in glass - GT PRC.png","image_path":"\/sites\/default\/files\/images\/Novel%20optical%20interconnection%20in%20glass%20-%20GT%20PRC.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/Novel%20optical%20interconnection%20in%20glass%20-%20GT%20PRC.png","mime":"image\/png","size":188618,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Novel%20optical%20interconnection%20in%20glass%20-%20GT%20PRC.png?itok=IhLK7TlP"}}},"media_ids":["582312","582313"],"groups":[{"id":"1237","name":"College of Engineering"},{"id":"197261","name":"Institute for Electronics and Nanotechnology"},{"id":"213791","name":"3D Systems Packaging Research Center"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"42911","name":"Education"},{"id":"134","name":"Student and Faculty"},{"id":"8862","name":"Student Research"},{"id":"135","name":"Research"},{"id":"153","name":"Computer Science\/Information Technology and Security"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"}],"keywords":[{"id":"4127","name":"PRC"},{"id":"12103","name":"Rao Tummala"},{"id":"1815","name":"optoelectronics"},{"id":"2290","name":"photonics"},{"id":"166924","name":"3D glass photonics"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[{"id":"71881","name":"Science and Technology"}],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EKaren May\u003C\/p\u003E\r\n\r\n\u003Cp\u003EMarketing \u0026amp; Communications Coordinator\u003C\/p\u003E\r\n\r\n\u003Cp\u003EPackaging Research Center\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Ca href=\u0022mailto:karen.may@ece.gatech.edu\u0022\u003Ekaren.may@ece.gatech.edu\u003C\/a\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E(404) 385-1220\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["karen.may@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"582299":{"#nid":"582299","#data":{"type":"news","title":"What is New @ GT in Packaging? Glass Panel Fan-out","body":[{"value":"\u003Ch4\u003E\u003Cem\u003EGeorgia Tech and its industry partners develop next generation of ultra-thin and ultra-high I\/O density panel and wafer fan-out packaging to close the interconnect gap for digital applications, thickness or miniaturization gap for analog, power, RF and mm-wave applications,\u0026nbsp;and power and thermal gap for high-power applications.\u003C\/em\u003E\u003C\/h4\u003E\r\n\r\n\u003Cp\u003EAll packages are fan-out packages with the exception of chip-scale or wafer-level packages. These fan-out packages fall into two categories: chip-first, also called embedded, and chip-last. Both provide wiring or RDL to connect to ICs at fine or coarse pitch. In the chip-first approach, RDL is deposited directly onto ICs thus requiring no assembly; in contrast, in the chip-last process, two separate processes, one to form RDL with or without a substrate and second to assemble ICs to the wiring layers.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EFan-out wafer-level packages (FO-WLP), as extension of wafer-level packages, provide RDL wiring and I\/Os beyond ICs on the surface of molding compounds. These packages, therefore, are no longer limited by I\/Os and are thus poised to disrupt the entire semiconductor industry due to their benefits in performance, due to ultra-short interconnections, and wafer-based manufacturing infrastructure availability, compared to traditional flip-chip or wire bond packages. Two sets of applications are driving the need for fan-out packages: 1) analog applications that include RF, mm-wave such as Radar, and power for consumer electronics, using smaller and thinner devices to achieve thin packages with high component densities; and 2) digital applications to embed processors with larger ICs at higher I\/O densities. The scope of FO-WLP technology is being proposed and developed in recent years to include multi-component SiP modules and integrated logic and 3D memory stacks to achieve high bandwidth.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EBut wafer fan out, as practiced today, has three major limitations: High cost, small Package size and low I\/O density. Cost and package size limitations are due to small 300 mm wafers from which these fan-out packages are produced and low I\/O density due to molding compound-driven challenges.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ETo address some of these concerns, panel-fanout Packaging (FO PLP) is beginning to emerge as a major new frontier. The economies of scale of panel-based processing may reduce FO-WLP cost by as much as 2-4x, depending on the package size, with the number of dies per package, the number of RDL layers and the panel size. FO PLP technologies can be broadly classified into two categories: 1) PWB infrastructure-based panel fan-out such as Imbera\u0026rsquo;s Integrated Module Board (IMB), AT\u0026amp;S\u0026rsquo;s Embedded Components Packaging (ECP), and ASE\u0026rsquo;s advanced \u0026ndash; Embedded Assembly Solution Integration (a-EASI); Amkor and J-Devices Wide Strip Panel Fan-out Package (WFOP); and 2) LCD infrastructure-based panel fan-out that include PTI\u0026rsquo;s molded fan-out using 370mm x 470mm panels, and most recently by Samsung LSI, Samsung Display and SEMCO by repurposing idled Gen 3.25 (600mm x 720mm) and Gen 4 (730mm x 920mm) LCD lines.\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThev\u0026nbsp;next generation of panel fan-out evolution must address three barriers:\u003C\/p\u003E\r\n\r\n\u003Col\u003E\r\n\t\u003Cli\u003EInterconnect gap for digital applications\u003C\/li\u003E\r\n\t\u003Cli\u003EThickness or miniaturization gap for analog, power, RF and mm-wave, and\u003C\/li\u003E\r\n\t\u003Cli\u003EThermal and power gap for high-power applications.\u003C\/li\u003E\r\n\u003C\/ol\u003E\r\n\r\n\u003Cp\u003EGeorgia Tech and its 50 industry partners are developing next generation of panel fan-out in both chip-first and chip-last approaches to address these barriers, not only for computing and communications applications, but also for high-temperature and high-power automotive applications. In contrast to the wafer fan-out with molding compounds and laminate-based panel fan-outs, both can generally be referred to as organic-based, Georgia Tech\u0026rsquo;s approach is based on inorganic panel fan-out, either with glass as GFO or poly-silicon fan-out as PSFO.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe Georgia Tech Glass Fan-out (GFO) approach addresses the interconnect gap with Si BEOL-like wiring, currently at 20 \u0026micro;m pitch. In addition, GFO provides lower interconnect loss, and higher board-level reliability even with large package sizes. The silicon-like dimensional stability of glass in large-panel manufacturing brings an unparalleled combination of ultra-high I\/O density, ultra-high electrical performance, ultra-high reliability at low and high-temperature and low cost, not possible in molding compound-based or laminate-based fan-out technologies. With the low-loss of glass, being a factor of ~2-3x better than molding compounds, Georgia Tech\u0026rsquo;s GFO approach is ideal for RF and mm-wave modules. Unlike large high-density fan-out packages that require another package such as organic BGA package to connect to boards, GFO packages are designed to be directly SMT-attached to the board, enabled by the tailorability of the CTE of the glass panels and compliant interconnections. Lastly, the ultra-smooth surface and high dimensional stability of glass enables silicon-like RDL capability on large panels, for the first time, with less than 2\u0026micro;m critical dimensions (CD) for high density fan-out applications.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EThe GFO project is part of Georgia Tech\u0026rsquo;s industry consortium, supported by a number of industry partners, including Corning Glass, Asahi Glass, and Schott Glass that supply ultra-thin glass panels with cavities; Ushio that has placed a panel lithographic tool at Georgia Tech; Atotech that provides the plating chemistry for advanced metallization; and DISCO that has placed a low-cost planarization tool at Georgia Tech. End user applications for GFO in the Georgia Tech consortium include 5G, automotive camera and RADAR modules, low- and high-power modules, and logic-to-3D memory modules.\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cstrong\u003EAbout the Authors\u003C\/strong\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003ETailong Shi is a PhD student under the advisement of Prof. Rao Tummala. His research focus is on Design and Demonstration of glass fan-out (GFO) packages for 77GHz automotive RADAR and Camera modules. \u003C\/em\u003E\u003Cem\u003E\u003Ca href=\u0022mailto:tshi@gatech.edu\u0022\u003Etshi@gatech.edu\u003C\/a\u003E\u003C\/em\u003E\u003Cem\u003E.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EDr. Venky Sundaram is a Research Professor and the Associate Director of Industry Programs at Georgia Tech PRC. \u003C\/em\u003E\u003Cem\u003E\u003Ca href=\u0022mailto:vs24@mail.gatech.edu\u0022\u003Evs24@mail.gatech.edu\u003C\/a\u003E.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EDr. Fuhan Liu is a Research Professor and an Assistant Program Manager for the GFO program. \u003C\/em\u003E\u003Cem\u003E\u003Ca href=\u0022mailto:fuhan.liu@ece.gatech.edu\u0022\u003Efuhan.liu@ece.gatech.edu\u003C\/a\u003E\u003C\/em\u003E\u003Cem\u003E.\u0026nbsp;\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EDr. Vanessa Smet is a Research Professor and the Program Manager for the Interconnections \u0026amp; Assembly (I\u0026amp;A) and High-power program. \u003C\/em\u003E\u003Cem\u003E\u003Ca href=\u0022mailto:vanessa.smet@prc.gatech.edu\u0022\u003Evanessa.smet@prc.gatech.edu\u003C\/a\u003E\u003C\/em\u003E\u003Cem\u003E.\u003C\/em\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Cem\u003EProf. Rao Tummala is the Joseph M. Pettit Chair Professor in ECE and MSE, and the Director of Georgia Tech\u0026rsquo;s 3D Systems Packaging Research Center (GT PRC). \u003C\/em\u003E\u003Cem\u003E\u003Ca href=\u0022mailto:rao.tummala@ece.gatech.edu\u0022\u003Erao.tummala@ece.gatech.edu\u003C\/a\u003E\u003C\/em\u003E\u003Cem\u003E.\u0026nbsp; \u0026nbsp;\u003C\/em\u003E\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"Georgia Tech and its industry partners develop next generation Glass Panel Fan-out"}],"uid":"27850","created_gmt":"2016-10-10 13:43:18","changed_gmt":"2016-10-10 13:46:09","author":"Karen May","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2016-10-06T00:00:00-04:00","iso_date":"2016-10-06T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"581921":{"id":"581921","type":"image","title":"First demonstration of Glass Fan-out (GFO) embedding in ultra-thin glass panels.","body":null,"created":"1475178524","gmt_created":"2016-09-29 19:48:44","changed":"1476107577","gmt_changed":"2016-10-10 13:52:57","alt":"","file":{"fid":"221972","name":"Glass Fan Out Demonstration - FINAL 300 x 169.png","image_path":"\/sites\/default\/files\/images\/Glass%20Fan%20Out%20Demonstration%20-%20FINAL%20300%20x%20169_0.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/Glass%20Fan%20Out%20Demonstration%20-%20FINAL%20300%20x%20169_0.png","mime":"image\/png","size":82900,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Glass%20Fan%20Out%20Demonstration%20-%20FINAL%20300%20x%20169_0.png?itok=ta3mTith"}},"581922":{"id":"581922","type":"image","title":"Close up after GFO embedding in ultra-thin glass panels.","body":null,"created":"1475178556","gmt_created":"2016-09-29 19:49:16","changed":"1476107665","gmt_changed":"2016-10-10 13:54:25","alt":"","file":{"fid":"221973","name":"Glass Fan Out Demonstration Closeup - FINAL 300 x 169.png","image_path":"\/sites\/default\/files\/images\/Glass%20Fan%20Out%20Demonstration%20Closeup%20-%20FINAL%20300%20x%20169_0.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/Glass%20Fan%20Out%20Demonstration%20Closeup%20-%20FINAL%20300%20x%20169_0.png","mime":"image\/png","size":72461,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/Glass%20Fan%20Out%20Demonstration%20Closeup%20-%20FINAL%20300%20x%20169_0.png?itok=NLY3Gmi6"}}},"media_ids":["581921","581922"],"groups":[{"id":"1237","name":"College of Engineering"},{"id":"197261","name":"Institute for Electronics and Nanotechnology"},{"id":"213791","name":"3D Systems Packaging Research Center"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"42911","name":"Education"},{"id":"134","name":"Student and Faculty"},{"id":"8862","name":"Student Research"},{"id":"135","name":"Research"},{"id":"153","name":"Computer Science\/Information Technology and Security"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"}],"keywords":[{"id":"4127","name":"PRC"},{"id":"12103","name":"Rao Tummala"},{"id":"172373","name":"glass fan-out"},{"id":"172374","name":"embedding"},{"id":"148611","name":"glass panel"},{"id":"172375","name":"ultra-thin glass"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[{"id":"71881","name":"Science and Technology"}],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EKaren May\u003C\/p\u003E\r\n\r\n\u003Cp\u003EMarketing \u0026amp; Communications Coordinator\u003C\/p\u003E\r\n\r\n\u003Cp\u003EPackaging Research Center\u003C\/p\u003E\r\n\r\n\u003Cp\u003E\u003Ca href=\u0022mailto:karen.may@ece.gatech.edu\u0022\u003Ekaren.may@ece.gatech.edu\u003C\/a\u003E\u003C\/p\u003E\r\n\r\n\u003Cp\u003E(404) 385-1220\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["karen.may@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"536001":{"#nid":"536001","#data":{"type":"news","title":"Spring 2016 Georgia Tech Institute for Electronics and Nanotechnology (IEN) Seed Grant Program Winners Announced","body":[{"value":"\u003Cp\u003EThe Institute for Electronics and Nanotechnology at Georgia Tech has announced the winners for the 2016 Spring Seed Grant Awards. The primary purpose of the IEN Seed Grant is to give first or second year graduate students in various disciplines working on original and un-funded research in micro- and nano-scale projects the opportunity to access the most advanced academic cleanroom space in the Southeast. In addition to accessing the high-level fabrication, lithography, and characterization tools in the labs, the students will have the opportunity to gain proficiency in cleanroom and tool methodology and to use the consultation services provided by research staff members of the IEN Advanced Technology Team.\u0026nbsp; In addition, the Seed Grant program gives faculty with novel research topics the ability to develop preliminary data in order to pursue follow-up funding sources.\u003C\/p\u003E\u003Cp\u003EThe 4 winning projects, from a diverse group of engineering disciplines, were awarded a six month block of IEN cleanroom and lab access time. In keeping with the interdisciplinary mission of IEN, the projects that will be enabled by the grants include research in materials, biomedicine, nanoelectronics, and packaging applications.\u003C\/p\u003E\u003Cp\u003EThe Spring 2016 IEN Seed Grant Award winners are:\u003C\/p\u003E\u003Cul\u003E\u003Cli\u003EMoez Aziz (PI Hua Wang, Electrical and Computer Engineering), \u003Cem\u003EDeveloping Cellular Sample Delivery and Isolation Techniques on the Integrated CMOS Nanoelectronic Platform\u003C\/em\u003E\u003C\/li\u003E\u003Cli\u003EMeredith Fay (PI Wilbur Lam, Biomedical Engineering), \u003Cem\u003EHow Do White Blood Cells Talk to Each Other? Leveraging Microfabricated Systems to Investigate Direct Neutrophil-to-Neutrophil Communication\u003C\/em\u003E\u003C\/li\u003E\u003Cli\u003EAugustus Lang (PI John Reynolds, Chemistry and Biochemistry \u0026amp; Materials Science and Engineering), \u003Cem\u003EElectrofunctional Paper: Flexible Paper-Based Displays\u003C\/em\u003E\u003C\/li\u003E\u003Cli\u003EAmar Mohabir and Sterling Smith (undergraduate)(PI Mike Filler, Chemical \u0026amp; Biomolecular Engineering), \u003Cem\u003EPlasmonic-Phononic Hybrid Nanoparticles: New Materials for Extreme Infrared Light Focusing\u003C\/em\u003E\u003C\/li\u003E\u003C\/ul\u003E\u003Cp\u003EAwardees will present the results of their research efforts at the annual IEN User Day in 2017.\u003C\/p\u003E\u003Cp\u003EFor more information about IEN cleanroom facilities, research capabilities, and collaboration opportunities please visit \u003Ca href=\u0022http:\/\/www.ien.gatech.edu\u0022 title=\u0022www.ien.gatech.edu\u0022\u003Ewww.ien.gatech.edu\u003C\/a\u003E.\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"The Institute for Electronics and Nanotechnology at Georgia Tech has announced the winners for the 2016 Spring Seed Grant Awards."}],"uid":"27863","created_gmt":"2016-05-12 15:52:23","changed_gmt":"2016-10-08 03:21:39","author":"Christa Ernst","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2016-05-12T00:00:00-04:00","iso_date":"2016-05-12T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"507811":{"id":"507811","type":"image","title":"IEN Seed Grant logo","body":null,"created":"1457114400","gmt_created":"2016-03-04 18:00:00","changed":"1475895270","gmt_changed":"2016-10-08 02:54:30","alt":"IEN Seed Grant logo","file":{"fid":"205936","name":"seed_grant_ien_pic_0.jpg","image_path":"\/sites\/default\/files\/images\/seed_grant_ien_pic_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/seed_grant_ien_pic_0.jpg","mime":"image\/jpeg","size":45984,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/seed_grant_ien_pic_0.jpg?itok=2uIfVuWh"}}},"media_ids":["507811"],"groups":[{"id":"1271","name":"NanoTECH"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"42911","name":"Education"},{"id":"141","name":"Chemistry and Chemical Engineering"},{"id":"134","name":"Student and Faculty"},{"id":"8862","name":"Student Research"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"}],"keywords":[{"id":"249","name":"Biomedical Engineering"},{"id":"560","name":"chemical engineering"},{"id":"609","name":"electronics"},{"id":"12373","name":"flexible electronics"},{"id":"67901","name":"Hua Wang"},{"id":"4993","name":"john reynolds"},{"id":"16741","name":"Michael Filler"},{"id":"2832","name":"microelectronics"},{"id":"5190","name":"nanoelectronics"},{"id":"137861","name":"Nanoplasmonics"},{"id":"172027","name":"seed grant award"},{"id":"166968","name":"the Institute for Electronics and Nanotechnology"},{"id":"58001","name":"the institute for materials"},{"id":"14681","name":"Wilbur Lam"}],"core_research_areas":[{"id":"39441","name":"Bioengineering and Bioscience"},{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":["david.gottfried@ien.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"495291":{"#nid":"495291","#data":{"type":"news","title":"Low Cost and Ultra-Miniaturized RF Passives and LTE Modules for Consumer and Automotive Needs","body":[{"value":"\u003Cp\u003E\u003Cem\u003EGeorgia Tech and its industry partners demonstrate pioneering advances in 3D Glass-based RF modules and Integrated Passive Devices (3D IPDs) as the next stage of evolution, beyond LTCC and organic 2D MCM organic and embedded modules. \u003C\/em\u003E\u003C\/p\u003E\u003Cp\u003EGeorgia Tech\u2019s 3D IPAC approach enables 2X shrinkage in X-Y form factor and 2X smaller in thickness than LTCC and organic modules.It also enables superior performance from high-Q LC integration with better than 5% tolerance from precision lithography in contrast to ceramic modules, lower-loss interconnections between components leading to insertion losses of \u0026lt;0.5 dB. Glass provides ultra-smooth and dimensionally-stable substrates for high-throughput and large-area (1000 mm) panel processing \u003Cstrong\u003Ewith low cost\u003C\/strong\u003E. These advances are expected to enable the miniaturization, integration, performance and cost demands for emerging 5G front-end modules and their convergence with IoT and automotive communications.\u003C\/p\u003E\u003Cp\u003EGeorgia Tech proposed\u003Cstrong\u003E 3D Integrated Passive and Active Component (3D IPAC) based glass RF modules\u003C\/strong\u003E and 3D IPDs in 2013, for unparalleled miniaturization, performance and cost. The 3D IPAC RF Module starts with an ultra-thin substrate (30-100 microns) made of glass, with ultra-low electrical loss and ultra-short through-package vias for double-side assembly of active and passive components separated by only about 50 \u00b5m in interconnect length. Actives and passives are embedded or assembled double-side on the glass using ultra-short, low-temperature and fine-pith copper interconnections. The module also integrates thermal and shielding functions with innovative structures and materials.\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003ESeveral technology breakthroughs\u003C\/strong\u003E were accomplished to demonstrate such RF IPDs and modules. High-density through-vias in bare glass were formed from unique via-machining techniques by Georgia Tech\u2019s partners such as Corning and Asahi Glass. Innovative tools and processes were developed for large glass panel handling with thinfilm low-loss build-up dielectrics, in partnership with Georgia Tech\u2019s consortium members such as Atotech, NGK-NTK, Shinko and Unimicron. Advanced 3D TPV-based inductor designs were developed for high Q and high-density inductors, while inorganic nanodielectrics and nanomagneto dielectrics were utilized for further miniaturization of capacitors, inductors and EMI shield structures. Precision panel-level lithography was achieved for accurate microwave impedance matching with less than 5% tolerance. Double-side assembly was also demonstrated with such ultra-thin glass substrates.\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003EGeorgia Tech\u2019s 3D IPD-based diplexers\u003C\/strong\u003E are 4X thinner compared to traditional approaches, with similar performance. With advanced thinfilm and high-density passive components, and design innovations, much superior performance is targeted in the next phase of the R\u0026amp;D program from 2016-2018. Georgia Tech and its partners also demonstrated \u003Cstrong\u003Eultra-miniaturized LTE and WLAN modules\u003C\/strong\u003E with its 3D IPAC approach with double-side integration of LNA, switch and filters. Good model-to-hardware correlations were seen from the module characterization of LNA gain and entry-to-exit insertion loss, illustrating the performance benefits of 3D IPAC modules. In the next phase, Georgia Tech is extending this concept further to complete PAMiD module integration with integrated thermal and shielding structures for LTE FDD\/TDD, 5G and mm wave applications.\u003C\/p\u003E\u003Cp\u003E\u0026nbsp;\u003C\/p\u003E\u003Cp\u003EFor more information about Georgia Tech\u2019s Integrated Passives and Actives, please contact Prof. Rao Tummala at \u003Ca href=\u0022mailto:rao.tummala@ece.gatech.edu\u0022\u003Erao.tummala@ece.gatech.edu\u003C\/a\u003E or Dr. P.M. Raj at \u003Ca href=\u0022mailto:raj.pulugurtha@prc.gatech.edu\u0022\u003Eraj.pulugurtha@prc.gatech.edu\u003C\/a\u003E.\u003C\/p\u003E\u003Cp\u003E\u0026nbsp;\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003EAbout the Authors\u003C\/strong\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cem\u003EDr. Raj Pulugurtha is the Program Manager for Integrated Passive and Actives as well as High-Temp Electronics at Georgia Tech PRC. \u003C\/em\u003E\u003Ca href=\u0022mailto:raj.pulugurtha@prc.gatech.edu\u0022\u003Eraj.pulugurtha@prc.gatech.edu\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cem\u003EDr. Rao Tummala is Director of Georgia Tech\u2019s Packaging Research Center. He is also a Chaired Professor in ECE and MSE. \u003C\/em\u003E\u003Ca href=\u0022mailto:rao.tummala@ece.gatech.edu\u0022\u003E\u003Cem\u003Erao.tummala@ece.gatech.edu\u003C\/em\u003E\u003C\/a\u003E\u003Cem\u003E.\u0026nbsp;\u003C\/em\u003E\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"Georgia Tech and its industry partners demonstrate pioneering advances in 3D Glass-based RF modules and Integrated Passive Devices (3D IPDs) as the next stage of evolution."}],"uid":"27850","created_gmt":"2016-02-04 11:30:02","changed_gmt":"2016-10-08 03:20:35","author":"Karen May","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2016-02-04T00:00:00-05:00","iso_date":"2016-02-04T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"495281":{"id":"495281","type":"image","title":"3D IPAC LTE module on large glass panel and its cross-section.","body":null,"created":"1454612400","gmt_created":"2016-02-04 19:00:00","changed":"1475895253","gmt_changed":"2016-10-08 02:54:13","alt":"3D IPAC LTE module on large glass panel and its cross-section.","file":{"fid":"204566","name":"ooo.png","image_path":"\/sites\/default\/files\/images\/ooo_0.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/ooo_0.png","mime":"image\/png","size":3329165,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/ooo_0.png?itok=_vejb0rQ"}}},"media_ids":["495281"],"groups":[{"id":"213791","name":"3D Systems Packaging Research Center"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"42911","name":"Education"},{"id":"134","name":"Student and Faculty"},{"id":"153","name":"Computer Science\/Information Technology and Security"},{"id":"8862","name":"Student Research"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"135","name":"Research"}],"keywords":[{"id":"77001","name":"2.5D Packages"},{"id":"48351","name":"interconnect"},{"id":"69571","name":"Interposers"},{"id":"171599","name":"low power"},{"id":"4127","name":"PRC"},{"id":"12103","name":"Rao Tummala"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EKaren Weber May\u003C\/p\u003E\u003Cp\u003EMarketing \u0026amp; Communications Coordinator\u003C\/p\u003E\u003Cp\u003EPackaging Research Center\u003C\/p\u003E\u003Cp\u003E\u003Ca href=\u0022mailto:karen.may@ece.gatech.edu\u0022\u003Ekaren.may@ece.gatech.edu\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003E(404) 385-1220\u003C\/p\u003E","format":"limited_html"}],"email":["karen.weber@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"490011":{"#nid":"490011","#data":{"type":"news","title":"Low Cost and High Performance 2.5D Glass Interposer BGA for Ultra-high Bandwidth at low power","body":[{"value":"\u003Cp\u003E\u003Cem\u003EGeorgia Tech and its partners have developed 2.5D glass interposer technology as a superior alternative to organic interposers in interconnect density, and silicon interposers in electrical performance, power consumption, and cost.\u003C\/em\u003E\u003C\/p\u003E\u003Cp\u003EGeorgia Tech was the first to start glass packaging five years ago as the next generation packaging technology after plastic or leadframe packaging in the 1970s, ceramic packaging in 1980s, and organic build-up in the 1990s. Georgia Tech proposed glass packaging as a superior packaging platform due to its improved electrical properties including low dielectric constant and low dielectric loss, thermal expansion match to silicon ICs, smooth surface finish, low moisture absorption, and availability in ultra-thin and large form factors without grinding. Georgia Tech identified and addressed three fundamental limitations of glass packaging that included low thermal conductivity, TSV-like through via formation at fine pitch and low cost, and mechanical brittleness.\u003C\/p\u003E\u003Cp\u003ECurrently, Georgia Tech is designing and demonstrating glass packaging for a variety of applications including digital, RF, power, flexible electronics and automotive applications.\u003C\/p\u003E\u003Cp\u003EThe goal of Georgia Tech\u2019s 2.5D glass interposer is to serve high-performance computing markets including networks, graphics and as the interconnect platform for split SOCs, as announced by IBM, AMD and now Intel. These markets share a common set of system requirements\u2014low latency, ultra-high interconnect density for ultra-high bandwidth, low-power interconnections, large package size, and low cost. Currently, silicon interposer is the only commercially-available technology that begins to address these system needs. Silicon interposers, while they provide suitable interconnect density, suffer from high signal losses due to dielectric and conductor losses and high cost due to small 300 mm size wafer processing and manufacturing, as well as the need for an organic BGA package between the interposer and system board. Organic interposers are being developed to overcome these limitations of silicon interposers, but are fundamentally limited in I\/O density over the long term. Georgia Tech\u2019s glass interposer, in contrast, is made up of 100 micron thin glass, which is available in large panel or roll-to-roll form, with through via at as low as 30 micron pitch and fine-pitch RDL with microvias at less than 10 microns\u2014enabling 40 micron chip-level I\/O pitch in development and 20 micron pitch in research.\u003C\/p\u003E\u003Cp\u003EGeorgia Tech and its industry partners are designing and developing 2.5D glass interposer BGA packages with the following strategic advantages:\u003C\/p\u003E\u003Cul\u003E\u003Cli\u003EHigh electrical performance achieved using low permittivity and low loss dielectrics to fabricate multilayer RDL wiring lines at 6 micron line pitch with 3 micron line lithography leading to 40 micron bump pitch, enabling short, high-density die-to-die interconnections with 0.12 dB\/mm line insertion loss at 2 GHz.\u003C\/li\u003E\u003Cli\u003ELow interconnect losses achieved by reducing dielectric and conductor losses using low loss dielectrics and thick copper conductive lines, compared to BEOL. As a result, line insertion losses for high-speed, off-package interconnects as low as 0.05 dB\/mm are achieved\u2014a 6X reduction compared to similar results reported with silicon interposers.\u003C\/li\u003E\u003Cli\u003EHigh reliability using unique interposer fabrication and assembly technologies\u003C\/li\u003E\u003Cli\u003EHigh density interconnections since glass behaves like silicon in its surface smoothness and dimensional stability in minimizing line lithography, line pitch and I\/O pitch. The Georgia Tech program has recently demonstrated 3 micron wiring lines with via-in-pad technology at 40 micron I\/O bump, targeting 20 micron pitch in 2016.\u003C\/li\u003E\u003C\/ul\u003E\u003Cp\u003E\u003Cstrong\u003EDirect board-level attachment of 2.5D glass interposer BGA:\u003C\/strong\u003E Unlike silicon interposer, which requires organic BGA for assembly to PCB, direct attachment of a glass interposer BGA to board has been demonstrated by the Georgia Tech team using a 18.5 mm glass BGA package size. The stresses due to CTE mismatch between the glass and board are managed by a variety of stress buffer approaches.\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003ECost:\u003C\/strong\u003E The cost of glass interposer package is expected to be similar to organic packages in high volume by utilizing large panels that are 5-10x larger than 300 mm silicon wafers. In addition to large panel processing to reduce cost, the Georgia Tech process uses low cost materials and dryfilm processes, double-side advanced semi-additive plating, large area lithography, high-speed plating, and panel scalable die assembly technologies.\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003EThe Georgia Tech glass packaging R\u0026amp;D is unique in the academic world.\u003C\/strong\u003E It involves partnership with manufacturing supply chain and end-user companies, resulting in accelerated 2.5D glass interposer package R\u0026amp;D. Corning and Asahi Glass, for example, have both developed high throughput roll-to-roll glass panel manufacturing as well as high throughput through-via processes and prepared them for volume manufacturing. Other supply chain manufacturing contributions to accelerate 2.5D fabrication development include: Ushio\u2019s lithographic tool placed at Georgia Tech for 2 micron line lithography, SUSS MicroTec\u2019s projection excimer laser ablation for microvias at less than 10 microns, Atotech\u2019s differential seed layer etch for advanced SAP, as well as Shinko\u2019s and Unimicron\u2019s glass substrate prototype fabrication using panel manufacturing processes.\u003C\/p\u003E\u003Cp\u003EThe current design and demonstration focus is the fabrication of low cost advanced RDL and TCB chip assembly processes, resulting in the first 2.5D glass interposer package prototype shown above.\u003C\/p\u003E\u003Cp\u003EThe next focus is to apply this interposer technology for high bandwidth logic-to-memory applications working with semiconductor and system companies\u003C\/p\u003E\u003Cp\u003EFor more information about Georgia Tech\u2019s glass packaging technology, please contact Prof. Rao Tummala at \u003Ca href=\u0022mailto:rao.tummala@ece.gatech.edu\u0022\u003Erao.tummala@ece.gatech.edu\u003C\/a\u003E.\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003EAbout the Authors\u003C\/strong\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cem\u003EBrett Sawyer, is a 4\u003Csup\u003Eth\u003C\/sup\u003E year ECE student pursuing his PhD under the advisement of Prof. Rao Tummala. His research focus is on Modeling, Design, and Fabrication of 2.5D Glass Interposer. \u003C\/em\u003E\u003Ca href=\u0022mailto:bsawyer@gatech.edu\u0022\u003E\u003Cem\u003Ebsawyer@gatech.edu\u003C\/em\u003E\u003C\/a\u003E\u003Cem\u003E.\u003C\/em\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cem\u003EDr. Rao Tummala is Director of Georgia Tech\u2019s Packaging Research Center. He is also a Chaired Professor in ECE and MSE. \u003C\/em\u003E\u003Ca href=\u0022mailto:rao.tummala@ece.gatech.edu\u0022\u003E\u003Cem\u003Erao.tummala@ece.gatech.edu\u003C\/em\u003E\u003C\/a\u003E\u003Cem\u003E.\u003C\/em\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cem\u003EDr. Venky Sundaram is Program Manager for Glass Substrate at GT PRC and research faculty in ECE. \u003C\/em\u003E\u003Cem\u003E\u003Ca href=\u0022mailto:vs24@mail.gatech.edu\u0022\u003Evs24@mail.gatech.edu\u003C\/a\u003E.\u0026nbsp;\u003C\/em\u003E\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"Georgia Tech and its partners have developed 2.5D glass interposer technology as a superior alternative to organic interposers in interconnect density, and silicon interposers in electrical performance, power consumption, and cost."}],"uid":"27850","created_gmt":"2016-01-25 14:58:14","changed_gmt":"2016-10-08 03:20:27","author":"Karen May","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2016-01-25T00:00:00-05:00","iso_date":"2016-01-25T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"490021":{"id":"490021","type":"image","title":"First 2.5D glass interposer prototype fabricated using low-cost processes and panel-level chip assembly at 50 micron thick bump pitch.","body":null,"created":"1453752000","gmt_created":"2016-01-25 20:00:00","changed":"1475895218","gmt_changed":"2016-10-08 02:53:38","alt":"First 2.5D glass interposer prototype fabricated using low-cost processes and panel-level chip assembly at 50 micron thick bump pitch.","file":{"fid":"204048","name":"first_2.5d.jpg","image_path":"\/sites\/default\/files\/images\/first_2.5d_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/first_2.5d_0.jpg","mime":"image\/jpeg","size":69090,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/first_2.5d_0.jpg?itok=lP4so1sz"}},"490031":{"id":"490031","type":"image","title":"Two-metal layer RDL on 300 micron thick glass panel.","body":null,"created":"1453752000","gmt_created":"2016-01-25 20:00:00","changed":"1475895245","gmt_changed":"2016-10-08 02:54:05","alt":"Two-metal layer RDL on 300 micron thick glass panel.","file":{"fid":"204422","name":"two_metal_layer.png","image_path":"\/sites\/default\/files\/images\/two_metal_layer_0.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/two_metal_layer_0.png","mime":"image\/png","size":180326,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/two_metal_layer_0.png?itok=QcCwUGuR"}}},"media_ids":["490021","490031"],"groups":[{"id":"1237","name":"College of Engineering"}],"categories":[{"id":"129","name":"Institute and Campus"},{"id":"42911","name":"Education"},{"id":"134","name":"Student and Faculty"},{"id":"153","name":"Computer Science\/Information Technology and Security"},{"id":"8862","name":"Student Research"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"135","name":"Research"}],"keywords":[{"id":"77001","name":"2.5D Packages"},{"id":"48351","name":"interconnect"},{"id":"69571","name":"Interposers"},{"id":"171599","name":"low power"},{"id":"4127","name":"PRC"},{"id":"12103","name":"Rao Tummala"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EKaren Weber May\u003C\/p\u003E\u003Cp\u003EMarketing \u0026amp; Communications Coordinator\u003C\/p\u003E\u003Cp\u003EPackaging Research Center\u003C\/p\u003E\u003Cp\u003E\u003Ca href=\u0022mailto:karen.may@ece.gatech.edu\u0022\u003Ekaren.may@ece.gatech.edu\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003E(404) 385-1220\u003C\/p\u003E","format":"limited_html"}],"email":["karen.weber@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"480521":{"#nid":"480521","#data":{"type":"news","title":"New Acoustic Technique Reveals Structural Information in Nanoscale Materials","body":[{"value":"\u003Cp\u003EUnderstanding where and how phase transitions occur is critical to developing new generations of the materials used in high-performance batteries, sensors, energy-harvesting devices, medical diagnostic equipment and other applications. But until now there was no good way to study and simultaneously map these phenomena at the relevant length scales.\u003C\/p\u003E\u003Cp\u003ENow, researchers at the Georgia Institute of Technology and Oak Ridge National Laboratory (ORNL) have developed a new nondestructive technique for investigating these material changes by examining the acoustic response at the nanoscale. Information obtained from this technique \u2013 which uses electrically-conductive atomic force microscope (AFM) probes \u2013 could guide efforts to design materials with enhanced properties at small size scales.\u003C\/p\u003E\u003Cp\u003EThe approach has been used in ferroelectric materials, but could also have applications in ferroelastics, solid protonic acids and materials known as relaxors. Sponsored by the National Science Foundation and the Department of Energy\u2019s Office of Science, the research was reported December 15 in the journal \u003Cem\u003EAdvanced Functional Materials\u003C\/em\u003E.\u003C\/p\u003E\u003Cp\u003E\u201cWe have developed a new characterization technique that allows us to study changes in the crystalline structure and changes in materials behavior at substantially smaller length scales with a relatively simple approach,\u201d said Nazanin Bassiri-Gharb, an associate professor in Georgia Tech\u2019s Woodruff School of Mechanical Engineering. \u201cKnowing where these phase transitions happen and at which length scales can help us design next-generation materials.\u201d\u003C\/p\u003E\u003Cp\u003EIn ferroelectric materials such as PZT (lead zirconate titanate), phase transitions can occur at the boundaries between one crystal type and another, under external stimuli. Properties such as the piezoelectric and dielectric effects can be amplified at the boundaries, which are caused by the multi-element \u201cconfused chemistry\u201d of the materials. Determining when these transitions occur can be done in bulk materials using various techniques, and at the smallest scales using an electron microscope.\u003C\/p\u003E\u003Cp\u003EThe researchers realized they could detect these phase transitions using acoustic techniques in samples at size scales between the bulk and tens of atoms. Using band-excitation piezoresponse force microscopy (BE-PFM) techniques developed at ORNL, they analyzed the resulting changes in resonant frequencies to detect phase changes in sample sizes relevant to the material applications. To do that, they applied an electric field to the samples using an AFM tip that had been coated with platinum to make it conductive, and through generation and detection of a band of frequencies.\u003C\/p\u003E\u003Cp\u003E\u201cWe\u2019ve had very good techniques for characterizing these phase changes at the large scale, and we\u2019ve been able to use electron microscopy to figure out almost atomistically where the phase transition occurs, but until this technique was developed, we had nothing in between,\u201d said Bassiri-Gharb. \u201cTo influence the structure of these materials through chemical or other means, we really needed to know where the transition breaks down, and at what length scale that occurs. This technique fills a gap in our knowledge.\u201d\u003C\/p\u003E\u003Cp\u003EThe changes the researchers detect acoustically are due to the elastic properties of the materials, so virtually any material with similar changes in elastic properties could be studied in this way. Bassiri-Gharb is interested in ferroelectrics such as PZT, but materials used in fuel cells, batteries, transducers and energy-harvesting devices could also be examined this way.\u003C\/p\u003E\u003Cp\u003E\u201cThis new method will allow for much greater insight into energy-harvesting and energy transduction materials at the relevant length sales,\u201d noted Rama Vasudeven, the first author of the paper and a materials scientist at the Center for Nanophase Materials Sciences, a U.S. Department of Energy user facility at ORNL.\u003C\/p\u003E\u003Cp\u003EThe researchers also modeled the relaxor-ferroelectric materials using thermodynamic methods, which supported the existence of a phase transition and the evolution of a complex domain pattern, in agreement with the experimental results.\u003C\/p\u003E\u003Cp\u003EUse of the AFM-based technique offers a number of attractive features. Laboratories already using AFM equipment can easily modify it to analyze these materials by adding electronic components and a conductive probe tip, Bassiri-Gharb noted. The AFM equipment can be operated under a range of temperature, electric field and other environmental conditions that are not easily implemented for electron microscope analysis, allowing scientists to study these materials under realistic operating conditions.\u003C\/p\u003E\u003Cp\u003E\u201cThis technique can probe a range of different materials at small scales and under difficult environmental conditions that would be inaccessible otherwise,\u201d said Bassiri-Gharb. \u201cMaterials used in energy applications experience these kinds of conditions, and our technique can provide the information we need to engineer materials with enhanced responses.\u201d\u003C\/p\u003E\u003Cp\u003EThough widely used, relaxor-ferroelectrics and PZT are still not well understood. In relaxor-ferroelectrics, for example, it\u2019s believed that there are pockets of material in phases that differ from the bulk, a distortion that may help confer the material\u2019s attractive properties. Using their technique, the researchers confirmed that the phase transitions can be extremely localized.\u003C\/p\u003E\u003Cp\u003EThey also learned that high responses of the materials occurred at those same locations.\u003Cbr \/\u003ENext steps would include varying the chemical composition of the material to see if those transitions \u2013 and enhanced properties \u2013 can be controlled. The researchers also plan to examine other materials.\u003C\/p\u003E\u003Cp\u003E\u201cIt turns out that many energy-related materials have electrical transitions, so we think this is going to be very important for studying functional materials in general,\u201d Bassiri-Gharb added. \u201cThe potential for gaining new understanding of these materials and their applications are huge.\u201d\u003C\/p\u003E\u003Cp\u003E\u003Cem\u003EThis research was supported by the National Science Foundation (NSF) through grant DMR-1255379. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility at ORNL. The content is solely the responsibility of the authors and does not necessarily represent the official views of the NSF or DOE.\u003C\/em\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003ECITATION\u003C\/strong\u003E: Rama K. Vasudevan, et al., \u201cAcoustic Detection of Phase Transitions at the Nanoscale,\u201d (Advanced Functional Materials, 2015). \u003Ca href=\u0022http:\/\/dx.doi.org\/10.1002\/adfm.201504407\u0022\u003Ehttp:\/\/dx.doi.org\/10.1002\/adfm.201504407\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003EResearch News\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cstrong\u003EGeorgia Institute of Technology\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cstrong\u003E177 North Avenue\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cstrong\u003EAtlanta, Georgia 30332-0181 USA\u003C\/strong\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003EMedia Relations Contact\u003C\/strong\u003E: John Toon (404-894-6986) (\u003Ca href=\u0022mailto:jtoon@gatech.edu\u0022\u003Ejtoon@gatech.edu\u003C\/a\u003E).\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003EWriter\u003C\/strong\u003E: John Toon\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EResearchers at the Georgia Institute of Technology and Oak Ridge National Laboratory (ORNL) have developed a new nondestructive technique for investigating phase transitions in materials by examining the acoustic response at the nanoscale.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"Researchers have developed a new technique for investigating phase transitions in materials by examining the acoustic response at the nanoscale."}],"uid":"27303","created_gmt":"2015-12-28 15:07:54","changed_gmt":"2016-10-08 03:20:20","author":"John Toon","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2015-12-28T00:00:00-05:00","iso_date":"2015-12-28T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"480491":{"id":"480491","type":"image","title":"AFM Cantilever Horizontal","body":null,"created":"1451937600","gmt_created":"2016-01-04 20:00:00","changed":"1475895234","gmt_changed":"2016-10-08 02:53:54","alt":"AFM Cantilever Horizontal","file":{"fid":"204189","name":"cantilever-schematic-horizonal.jpg","image_path":"\/sites\/default\/files\/images\/cantilever-schematic-horizonal_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/cantilever-schematic-horizonal_0.jpg","mime":"image\/jpeg","size":384620,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/cantilever-schematic-horizonal_0.jpg?itok=CpvkdLia"}},"480501":{"id":"480501","type":"image","title":"AFM Cantilever Vertical","body":null,"created":"1451937600","gmt_created":"2016-01-04 20:00:00","changed":"1475895234","gmt_changed":"2016-10-08 02:53:54","alt":"AFM Cantilever Vertical","file":{"fid":"204190","name":"cantilever-schematic.jpg","image_path":"\/sites\/default\/files\/images\/cantilever-schematic_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/cantilever-schematic_0.jpg","mime":"image\/jpeg","size":704851,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/cantilever-schematic_0.jpg?itok=V3Zz39Up"}},"480511":{"id":"480511","type":"image","title":"Energy Levels","body":null,"created":"1451937600","gmt_created":"2016-01-04 20:00:00","changed":"1475895234","gmt_changed":"2016-10-08 02:53:54","alt":"Energy Levels","file":{"fid":"204191","name":"energy_plots.jpg","image_path":"\/sites\/default\/files\/images\/energy_plots_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/energy_plots_0.jpg","mime":"image\/jpeg","size":137722,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/energy_plots_0.jpg?itok=q4tKi0jK"}}},"media_ids":["480491","480501","480511"],"groups":[{"id":"1188","name":"Research Horizons"}],"categories":[{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"135","name":"Research"},{"id":"150","name":"Physics and Physical Sciences"}],"keywords":[{"id":"1501","name":"acoustic"},{"id":"2779","name":"AFM"},{"id":"171553","name":"AFM cantilever"},{"id":"7826","name":"Batteries"},{"id":"431","name":"nanoscale"},{"id":"13686","name":"Nazanin Bassiri-Gharb"},{"id":"169799","name":"phase transition"},{"id":"167066","name":"sensors"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[{"id":"71881","name":"Science and Technology"}],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EJohn Toon\u003C\/p\u003E\u003Cp\u003EResearch News\u003C\/p\u003E\u003Cp\u003E\u003Ca href=\u0022mailto:jtoon@gatech.edu\u0022\u003Ejtoon@gatech.edu\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003E(404) 894-6986\u003C\/p\u003E","format":"limited_html"}],"email":["jtoon@gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"454251":{"#nid":"454251","#data":{"type":"news","title":"Swaminathan Receives Best Paper Award","body":[{"value":"\u003Cp\u003EMadhavan Swaminathan won a Best Paper Award at the 10\u003Csup\u003Eth\u003C\/sup\u003E IEEE Nanotechnology Materials and Devices Conference (NMDC 2015), held September 13-16 in Anchorage, Alaska.\u003C\/p\u003E\u003Cp\u003EA professor in the Georgia Tech School of Electrical and Computer Engineering (ECE), Swaminathan received the award for his paper entitled, \u201cEnabling Antenna Design with Nano-magnetic Materials Using Machine Learning.\u201d His coauthors on the paper are his ECE faculty colleagues, Rao Tummala and Raj Pulugurtha, and his colleagues from the University of L\u2019Aquila (Italy), Carmine Gianfagna and Giulio Antonini.\u003C\/p\u003E\u003Cp\u003EMagneto-dielectric materials enable antenna miniaturization. Since magneto dielectrics are synthesized from magnetic particles and polymer dielectrics, the dimensions of the particles and their volume fraction need to be controlled carefully to obtain the required antenna performance. In this paper, machine learning methods were used to determine the particle size and volume fraction to obtain the desired antenna properties such as gain, bandwidth, radiation efficiency, and resonant frequency.\u003C\/p\u003E\u003Cp\u003ESwaminathan holds the John Pippin Chair in Electromagnetics and is the director of the Interconnect and Packaging Center. He has been with Georgia Tech since 1994 and has been a member of the ECE faculty since 1997.\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EECE Professor Madhavan Swaminathan won a Best Paper Award at the 10\u003Csup\u003Eth\u003C\/sup\u003E IEEE Nanotechnology Materials and Devices Conference (NMDC 2015), held September 13-16 in Anchorage, Alaska.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"ECE Professor Madhavan Swaminathan won a Best Paper Award at the 10th IEEE Nanotechnology Materials and Devices Conference (NMDC 2015), held September 13-16 in Anchorage, Alaska."}],"uid":"27241","created_gmt":"2015-09-30 16:06:27","changed_gmt":"2016-10-08 03:19:40","author":"Jackie Nemeth","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2015-09-30T00:00:00-04:00","iso_date":"2015-09-30T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"301341":{"id":"301341","type":"image","title":"Madhavan Swaminathan","body":null,"created":"1449244572","gmt_created":"2015-12-04 15:56:12","changed":"1475895004","gmt_changed":"2016-10-08 02:50:04","alt":"Madhavan Swaminathan","file":{"fid":"199552","name":"madhavanswaminathan131021br459_web.jpg","image_path":"\/sites\/default\/files\/images\/madhavanswaminathan131021br459_web_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/madhavanswaminathan131021br459_web_0.jpg","mime":"image\/jpeg","size":4110863,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/madhavanswaminathan131021br459_web_0.jpg?itok=EFX1-Tlq"}}},"media_ids":["301341"],"related_links":[{"url":"http:\/\/www.ece.gatech.edu\/","title":"School of Electrical and Computer Engineering"},{"url":"http:\/\/www.gatech.edu\/","title":"Georgia Tech"},{"url":"http:\/\/ieeenmdc.org\/nmdc-2015\/","title":"IEEE Nanotechnology Materials and Devices Conference"},{"url":"http:\/\/www.ece.gatech.edu\/faculty-staff\/fac_profiles\/bio.php?id=100","title":"Madhavan Swaminathan"}],"groups":[{"id":"1255","name":"School of Electrical and Computer Engineering"}],"categories":[{"id":"134","name":"Student and Faculty"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"135","name":"Research"},{"id":"150","name":"Physics and Physical Sciences"}],"keywords":[{"id":"109","name":"Georgia Tech"},{"id":"143371","name":"IEEE Nanotechnology Materials and Devices Conference"},{"id":"13096","name":"Interconnect and Packaging Center"},{"id":"24251","name":"Madhavan Swaminathan"},{"id":"166855","name":"School of Electrical and Computer Engineering"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EJackie Nemeth\u003C\/p\u003E\u003Cp\u003ESchool of Electrical and Computer Engineering\u003C\/p\u003E\u003Cp\u003E404-894-2906\u003C\/p\u003E\u003Cp\u003E\u003Ca href=\u0022mailto:jackie.nemeth@ece.gatech.edu\u0022\u003Ejackie.nemeth@ece.gatech.edu\u003C\/a\u003E\u003C\/p\u003E","format":"limited_html"}],"email":["jackie.nemeth@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"451631":{"#nid":"451631","#data":{"type":"news","title":"Nano-mechanical Study Offers New Assessment of Silicon for Next-gen Batteries","body":[{"value":"\u003Cp\u003EA detailed nano-mechanical study of mechanical degradation processes in silicon structures containing varying levels of lithium ions offers good news for researchers attempting to develop reliable next-generation rechargeable batteries using silicon-based electrodes.\u003C\/p\u003E\u003Cp\u003EAnodes \u2013 the negative electrodes \u2013 based on silicon can theoretically store up to ten times more lithium ions than conventional graphite electrodes, making the material attractive for use in high-performance lithium-ion batteries. However, the brittleness of the material has discouraged efforts to use pure silicon in battery anodes, which must withstand dramatic volume changes during charge and discharge cycles.\u003C\/p\u003E\u003Cp\u003EUsing a combination of experimental and simulation techniques, researchers from the Georgia Institute of Technology and three other research organizations have reported surprisingly high damage tolerance in electrochemically-lithiated silicon materials. The work suggests that all-silicon anodes may be commercially viable if battery charge levels are kept high enough to maintain the material in its ductile state.\u003C\/p\u003E\u003Cp\u003ESupported by the National Science Foundation, the research was reported September 24 in the journal \u003Cem\u003ENature Communications\u003C\/em\u003E.\u003C\/p\u003E\u003Cp\u003E\u201cSilicon has a very high theoretical capacity, but because of the perceived mechanical issues, people have been frustrated about using it in next-generation batteries,\u201d said \u003Ca href=\u0022http:\/\/www.me.gatech.edu\/faculty\/xia\u0022\u003EShuman Xia\u003C\/a\u003E, an assistant professor in the \u003Ca href=\u0022http:\/\/www.me.gatech.edu\/\u0022\u003EGeorge W. Woodruff School of Mechanical Engineering\u003C\/a\u003E at Georgia Tech. \u201cBut our research shows that lithiated silicon is not as brittle as we may have thought. If we work carefully with the operational window and depth of discharge, our results suggest we can potentially design very durable silicon-based batteries.\u201d\u003C\/p\u003E\u003Cp\u003ELithium ion batteries are used today in a wide range of applications from hand-held mobile devices up to laptop computers and electric vehicles. A new generation of high-capacity batteries could facilitate expanded transportation applications and large-scale storage of electricity produced by renewable sources.\u003C\/p\u003E\u003Cp\u003EThe challenge is to get more lithium ions into the anodes and cathodes of the batteries. Today\u2019s lithium batteries use graphite anodes, but silicon has been identified as an alternative because it can store substantially more lithium ions per atom. However, storing those ions produces a volume change of up to 280 percent, causing stress that can crack anodes made from pure silicon, leading to significant performance degradation. One strategy is to use a composite of silicon particles and graphite, but that does not realize the full potential of silicon for boosting battery capacity.\u003C\/p\u003E\u003Cp\u003EIn an effort to understand what was happening with the materials, the research team used a series of systematic nano-mechanical tests, backed up by molecular dynamics simulations. To facilitate their study, they used silicon nanowires and electrochemical cells containing silicon films that were about 300 nanometers in thickness.\u003C\/p\u003E\u003Cp\u003EThe researchers studied the stress produced by lithiation of the silicon thin films, and used a nanoindenter \u2013 a tiny tip used to apply pressure on the film surface \u2013 to study crack propagation in these thin films, which contained varying amounts of lithium ions. Lithium-lean silicon cracked under the indentation stress, but the researchers were surprised to find that above a certain concentration of lithium, they could no longer crack the thin film samples.\u003C\/p\u003E\u003Cp\u003EUsing unique experimental equipment to assess the effects of mechanical bending on partially lithiated silcon nanotires, researchers led by Professor Scott Mao at the University of Pittsburgh studied the nanowire damage mechanisms in real-time using a transmission electron microscope (TEM). Their in-situ testing showed that the silicon cores of the nanowires remained brittle, while the outer portion of the wires became more ductile as they absorbed lithium.\u003C\/p\u003E\u003Cp\u003E\u201cOur nanoindentation and TEM experiments were very consistent,\u201d said Xia. \u201cBoth suggest that lithiated silicon material becomes very tolerant of damage as the lithium concentration goes above a certain level \u2013 a lithium-to-silicon molar ratio of about 1.5. Beyond this level, we can\u2019t even induce cracking with very large indentation loads.\u201d\u003C\/p\u003E\u003Cp\u003E\u003Ca href=\u0022http:\/\/www.me.gatech.edu\/faculty\/t_zhu\u0022\u003ETing Zhu\u003C\/a\u003E, a professor in Woodruff School of Mechanical Engineering at Georgia Tech, conducted detailed molecular dynamics simulations to understand what was happening in the electrochemically-lithiated silicon. As more lithium entered the silicon structures, he found, the ductile lithium-lithium and lithium-silicon bonds overcame the brittleness of the silicon-silicon bonds, giving the resulting lithium-silicon alloy more desirable fracture strength.\u003C\/p\u003E\u003Cp\u003E\u201cIn our simulation of lithium-rich alloys, the lithium-lithium bonds dominate,\u201d Zhu said. \u201cThe formation of damage and propagation of cracking can be effectively suppressed due to the large fraction of lithium-lithium and lithium-silicon bonds. Our simulation revealed the underpinnings of the alloy\u2019s transition from a brittle state to a ductile state.\u201d\u003C\/p\u003E\u003Cp\u003EUsing the results of the studies, the researchers charted the changing mechanical properties of the silicon structures as a function of their lithium content. By suggesting a range of operating conditions under which the silicon remains ductile, Xia hopes the work will cause battery engineers to take a new look at all-silicon electrodes.\u003C\/p\u003E\u003Cp\u003E\u201cOur work has fundamental and immediate implications for the development of high-capacity lithium-based batteries, both from practical and fundamental points of view,\u201d he said. \u201cLithiated silicon can have a very high damage tolerance beyond a threshold value of lithium concentration. This tells us that silicon-based batteries could be made very durable if we carefully control the depth of discharge.\u201d\u003C\/p\u003E\u003Cp\u003EIn future work, Xia and Zhu hope to study the mechanical properties of germanium, another potential anode material for high-rate rechargeable lithium-ion batteries. They will also look at all-solid batteries, which would operate without a liquid electrolyte to shuttle ions between the two electrodes. \u201cWe hope to find a solid electrolyte with both high lithium ion conductivity and good mechanical strength for replacing the current liquid electrolytes that are highly flammable,\u201d Zhu said.\u003C\/p\u003E\u003Cp\u003E\u201cThe research framework we have developed here is of general applicability to a very wide range of electrode materials,\u201d Xia noted. \u201cWe believe this work will stimulate a lot of new directions in battery research.\u201d\u003C\/p\u003E\u003Cp\u003E\u003Cem\u003EThis research was supported by the National Science Foundation through grants CMMI-1300458, CMMI-1100205 and NSF-DMR-1410936. The content is solely the responsibility of the authors and does not necessarily represent the official views of the National Science Foundation.\u003C\/em\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003ECITATION\u003C\/strong\u003E: Xueju Wang, et al., \u201c\u003Cem\u003EHigh Damage Tolerance of Electrochemically Lithiated Silicon\u003C\/em\u003E,\u201d (Nature Communications, 2015). (\u003Ca href=\u0022http:\/\/dx.doi.org\/10.1038\/ncomms9417\u0022\u003Ehttp:\/\/dx.doi.org\/10.1038\/ncomms9417\u003C\/a\u003E).\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003EResearch News\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cstrong\u003EGeorgia Institute of Technology\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cstrong\u003E177 North Avenue\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cstrong\u003EAtlanta, Georgia 30332-0181 USA\u003C\/strong\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003EMedia Relations Contact\u003C\/strong\u003E: John Toon (404-894-6986) (\u003Ca href=\u0022mailto:jtoon@gatech.edu\u0022\u003Ejtoon@gatech.edu\u003C\/a\u003E)\u003Cbr \/\u003E\u003Cstrong\u003EWriter\u003C\/strong\u003E: John Toon\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EA detailed nano-mechanical study of mechanical degradation processes in silicon structures containing varying levels of lithium ions offers good news for researchers attempting to develop reliable next-generation rechargeable batteries using silicon-based electrodes.\u0026nbsp;\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"A new nano-mechanical study of silicon structures offers good news for battery researchers."}],"uid":"27303","created_gmt":"2015-09-24 11:01:31","changed_gmt":"2016-10-08 03:19:36","author":"John Toon","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2015-09-24T00:00:00-04:00","iso_date":"2015-09-24T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"451571":{"id":"451571","type":"image","title":"Examining thin film silicon","body":null,"created":"1449256280","gmt_created":"2015-12-04 19:11:20","changed":"1475895194","gmt_changed":"2016-10-08 02:53:14","alt":"Examining thin film silicon","file":{"fid":"203343","name":"silicon-anode003.jpg","image_path":"\/sites\/default\/files\/images\/silicon-anode003_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/silicon-anode003_0.jpg","mime":"image\/jpeg","size":1692767,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/silicon-anode003_0.jpg?itok=CPydDM8Y"}},"451581":{"id":"451581","type":"image","title":"Testing lithiated silicon","body":null,"created":"1449256280","gmt_created":"2015-12-04 19:11:20","changed":"1475895194","gmt_changed":"2016-10-08 02:53:14","alt":"Testing lithiated silicon","file":{"fid":"203344","name":"silicon-anode007.jpg","image_path":"\/sites\/default\/files\/images\/silicon-anode007_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/silicon-anode007_0.jpg","mime":"image\/jpeg","size":1401521,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/silicon-anode007_0.jpg?itok=yN8EglXy"}},"451591":{"id":"451591","type":"image","title":"Nano-mechanical studies of silicon films","body":null,"created":"1449256280","gmt_created":"2015-12-04 19:11:20","changed":"1475895194","gmt_changed":"2016-10-08 02:53:14","alt":"Nano-mechanical studies of silicon films","file":{"fid":"203345","name":"silicon-anode006.jpg","image_path":"\/sites\/default\/files\/images\/silicon-anode006_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/silicon-anode006_0.jpg","mime":"image\/jpeg","size":1505174,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/silicon-anode006_0.jpg?itok=cL6leFKC"}}},"media_ids":["451571","451581","451591"],"groups":[{"id":"1188","name":"Research Horizons"}],"categories":[{"id":"144","name":"Energy"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"135","name":"Research"}],"keywords":[{"id":"142581","name":"anode. Shuman Xia"},{"id":"7826","name":"Batteries"},{"id":"142541","name":"lithiated silicon"},{"id":"142571","name":"lithium"},{"id":"142531","name":"nano-mechanical"},{"id":"92451","name":"Ting Zhu"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39531","name":"Energy and Sustainable Infrastructure"},{"id":"39471","name":"Materials"}],"news_room_topics":[{"id":"71881","name":"Science and Technology"}],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EJohn Toon\u003C\/p\u003E\u003Cp\u003EResearch News\u003C\/p\u003E\u003Cp\u003E\u003Ca href=\u0022mailto:jtoon@gatech.edu\u0022\u003Ejtoon@gatech.edu\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003E(404) 894-6986\u003C\/p\u003E","format":"limited_html"}],"email":["jtoon@gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"311781":{"#nid":"311781","#data":{"type":"news","title":"Swaminathan Tapped for NITT Distinguished Alumni Award","body":[{"value":"\u003Cp\u003EMadhavan Swaminathan has received the Distinguished Alumni Award from the National Institute of Technology Tiruchirappalli (NITT), located in the Indian state of Tamil Nadu, for his pioneering work and leadership in electronic packaging at Georgia Tech and IBM over the last 25 years.\u003C\/p\u003E\u003Cp\u003EThe Honorable Pranab Mukherjee, president of India, presented Swaminathan and 30 additional distinguished recipients with this honor on July 19 at the NITT campus, which is currently celebrating its 50-Year Golden Jubilee. Suresh Sitaraman, a professor in the George W. Woodruff School of Mechanical Engineering, was also recognized with the same award at this event.\u003C\/p\u003E\u003Cp\u003ESwaminathan received his bachelor of engineering degree in electronics and communications from NITT in 1985 and went on to earn his master\u2019s and doctoral degrees from Syracuse University in 1989 and 1991, respectively. In addition to his accomplishments at Georgia Tech and IBM, Swaminathan was recognized for helping to shape the design aspects of packaging that have led to the development of system on package technologies around the world, including the creation of an electronic packaging program at NITT and the education of engineers and scientists in India from both the private and public sectors.\u003C\/p\u003E\u003Cp\u003ESwaminathan is a faculty member at Georgia Tech, where he currently holds the John Pippin Chair in Electromagnetics in the School of Electrical and Computer Engineering (ECE) and is the director of the Interconnect and Packaging Center. He also served as the deputy director of the Microsystems Packaging Research Center, a National Science Foundation-sponsored Engineering Research Center. Prior to joining Georgia Tech, he worked for IBM on the packaging for supercomputers.\u003C\/p\u003E\u003Cp\u003EAs the leader of the Mixed-Signal Design Research Group in ECE, Swaminathan has graduated 35 Ph.D. and 17 M.S. students. He has published more than 400 technical articles, holds 27 patents, and has authored three books, all related to electronic packaging. He also co-founded and founded two spin-off companies, Jacket Micro Devices (JMD), which focused on integrated RF modules and substrates for wireless applications, and E-System Design, which focuses on the development of CAD tools for integrated 3D microsystems.\u003C\/p\u003E\u003Cp\u003ESwaminathan\u2019s research has been recognized through numerous awards, including 16 best paper and best student paper awards, a Technical Excellence Award from Semiconductor Research Corporation in 2007, the IBM Outstanding Faculty Award in 2004 and 2005, the Georgia Tech ECE Outstanding Graduate Research Advisor Award in 2002, and the 2014 IEEE Components, Packaging, and Manufacturing Technology Society Outstanding Sustained Technical Excellence Award. A Fellow of the IEEE, Dr. Swaminathan has also served as the Distinguished Lecturer for the IEEE Electromagnetic Compatibility Society.\u003C\/p\u003E\u003Cp\u003E*****************\u003C\/p\u003E\u003Cp\u003EIn the group photo, Swaminathan is pictured in the top row, second from the left, while Sitaraman is in the middle row on the left end of the row.\u003C\/p\u003E\u003Cp\u003E\u0026nbsp;\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EECE Professor Madhavan Swaminathan has received the Distinguished Alumni Award from the National Institute of Technology Tiruchirappalli (NITT), located in the Indian state of Tamil Nadu, for his pioneering work and leadership in electronic packaging at Georgia Tech and IBM over the last 25 years.\u003C\/p\u003E\u003Cp\u003E\u0026nbsp;\u0026nbsp;\u003C\/p\u003E\u003Cp\u003E\u0026nbsp;\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"ECE Professor Madhavan Swaminathan has received the Distinguished Alumni Award from the National Institute of Technology Tiruchirappalli (NITT) for his pioneering work and leadership in electronic packaging at Georgia Tech and IBM over the last 25 ye"}],"uid":"27241","created_gmt":"2014-07-30 15:49:50","changed_gmt":"2016-10-08 03:16:48","author":"Jackie Nemeth","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2014-07-30T00:00:00-04:00","iso_date":"2014-07-30T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"311771":{"id":"311771","type":"image","title":"2014 NITT Distinguished Alumni Award Recipients","body":null,"created":"1449244751","gmt_created":"2015-12-04 15:59:11","changed":"1475895020","gmt_changed":"2016-10-08 02:50:20","alt":"2014 NITT Distinguished Alumni Award Recipients","file":{"fid":"199865","name":"nitt_distinguished_alumni_award_recipients.jpg","image_path":"\/sites\/default\/files\/images\/nitt_distinguished_alumni_award_recipients_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/nitt_distinguished_alumni_award_recipients_0.jpg","mime":"image\/jpeg","size":6543403,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/nitt_distinguished_alumni_award_recipients_0.jpg?itok=HhGrujNH"}},"301341":{"id":"301341","type":"image","title":"Madhavan Swaminathan","body":null,"created":"1449244572","gmt_created":"2015-12-04 15:56:12","changed":"1475895004","gmt_changed":"2016-10-08 02:50:04","alt":"Madhavan Swaminathan","file":{"fid":"199552","name":"madhavanswaminathan131021br459_web.jpg","image_path":"\/sites\/default\/files\/images\/madhavanswaminathan131021br459_web_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/madhavanswaminathan131021br459_web_0.jpg","mime":"image\/jpeg","size":4110863,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/madhavanswaminathan131021br459_web_0.jpg?itok=EFX1-Tlq"}}},"media_ids":["311771","301341"],"related_links":[{"url":"http:\/\/www.gatech.edu\/","title":"Georgia Tech"},{"url":"http:\/\/www.ece.gatech.edu\/","title":"School of Electrical and Computer Engineering"},{"url":"http:\/\/www.nitt.edu\/home\/","title":"National Institute of Technology Tiruchirappalli"},{"url":"http:\/\/www.ece.gatech.edu\/faculty-staff\/fac_profiles\/bio.php?id=100","title":"Madhavan Swaminathan"},{"url":"http:\/\/www.ece.gatech.edu\/research\/labs\/hppdl\/Epsilon2010\/index.html","title":"Mixed Signal Design Group"}],"groups":[{"id":"1255","name":"School of Electrical and Computer Engineering"}],"categories":[{"id":"134","name":"Student and Faculty"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"135","name":"Research"}],"keywords":[{"id":"109","name":"Georgia Tech"},{"id":"13096","name":"Interconnect and Packaging Center"},{"id":"24251","name":"Madhavan Swaminathan"},{"id":"98801","name":"National Institute of Technology Tiruchirappalli"},{"id":"166855","name":"School of Electrical and Computer Engineering"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EJackie Nemeth\u003C\/p\u003E\u003Cp\u003ESchool of Electrical and Computer Engineering\u003C\/p\u003E\u003Cp\u003E404-894-2906\u003C\/p\u003E\u003Cp\u003E\u003Ca href=\u0022mailto:jackie.nemeth@ece.gatech.edu\u0022\u003Ejackie.nemeth@ece.gatech.edu\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003E\u0026nbsp;\u003C\/p\u003E","format":"limited_html"}],"email":["jackie.nemeth@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"309071":{"#nid":"309071","#data":{"type":"news","title":"Official Inauguration of the Institut Lafayette","body":[{"value":"\u003Cp\u003EOn Monday, May 26, 2014, the leadership of the Georgia Institute of Technology, Mr. E.G. Reade, consul General, dignitaries from the Lorraine region of France, and a host of research and corporate partners will gather at Georgia Tech-Lorraine in Metz, France for the official inauguration of the new building that will house the \u003Cem\u003EInstitut Lafayette\u003C\/em\u003E.\u003C\/p\u003E\u003Cp\u003EGeorgia Tech entered into a partnership with French governmental entities in 1990 to establish its first international campus in Metz, France. After two decades of innovative educational achievements, a world-class research presence was added in 2006 with the creation of the Georgia Tech-\u003Cem\u003ECentre National de la Recherche Scientifique\u003C\/em\u003E (CNRS) \u003Cem\u003EUnit\u00e9 Mixte Internationale\u003C\/em\u003E laboratory.\u0026nbsp;\u003C\/p\u003E\u003Cp\u003EGeorgia Tech is now moving to the next critical stage of expansion of its global influence with the creation of an innovation platform, the\u003Cem\u003E Institut Lafayette\u003C\/em\u003E. By providing access to a state-of-the-art technology infrastructure; by sharing world-class expertise in science and technology; and by offering business model validation and commercialization tools, the \u003Cem\u003EInstitut Lafayette\u003C\/em\u003E will showcase and underscore Georgia Tech\u2019s capacity to help create a full regional ecosystem which can generate innovations of economic and social value for its international partners.\u003C\/p\u003E\u003Cp\u003EThis expansion of Georgia Tech\u2019s global footprint will increase its impact around the globe, and serve to bring the world to Georgia Tech and to the State of Georgia. The \u003Cem\u003EInstitut Lafayette \u003C\/em\u003Ewill create opportunities to establish alliances with universities, companies, and governmental and non-governmental entities whose goals and activities align with Georgia Tech\u2019s strategic mission. This expansion will also significantly augment the teaching, research and entrepreneurial activities of Georgia Tech\u2019s faculty, staff, alumni and students both in Atlanta and in Lorraine. The new facilities also expand the European activities of the Georgia Tech Center for Organic Photonics and Electronics (Georgia Tech-COPE). The \u003Cem\u003EInstitut Lafayette\u003C\/em\u003E is expected to serve as a catalyst for economic development in the region of Lorraine and to increase trade exchange opportunities with metropolitan Atlanta, and the State of Georgia.\u003C\/p\u003E\u003Cp\u003ELocated adjacent to the existing Georgia Tech-Lorraine building, the brand new 25,000 square foot facility is comprised of offices, laboratories and a 5,000 square foot clean room, fully equipped with state-of-the-art nanofabrication tools to support innovations in optoelectronics and advanced semiconductor materials research. This facility will be managed by Georgia Tech faculty members who are world-renown experts in organic materials and semiconductors.\u003C\/p\u003E\u003Cp\u003EThis innovation platform will provide a unique combination of research expertise, an advanced technology infrastructure, and an array of technology transfer services which will increase efficiency and accelerate technology transfer. \u0026nbsp;Its impact and effectiveness will be further enabled by leveraging the resources of Georgia Tech \u2013 The Georgia Tech Enterprise Innovation Institute (EI2) will provide expertise in technology transfer and commercialization, and the Institute of Electronics and Nanotechnology (IEN) will provide expertise in managing and operating high-technology infrastructures.\u003C\/p\u003E\u003Cp\u003EThe \u003Cem\u003EInstitut Lafayette\u003C\/em\u003E was named after the Marquis de Lafayette, a French aristocrat and military officer who served as a major-general in the Continental Army under George Washington in the American Revolution.\u0026nbsp; \u0026nbsp;It was in Metz in 1775 that the Marquis de Lafayette made the decision to commit himself to the cause of American independence.\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"Georgia Tech is now moving to the next critical stage of expansion of its global influence with the creation of an innovation platform, the Institut Lafayette."}],"uid":"27185","created_gmt":"2014-07-17 10:51:12","changed_gmt":"2016-10-08 03:16:45","author":"Jason Martin","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2014-07-17T00:00:00-04:00","iso_date":"2014-07-17T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"309081":{"id":"309081","type":"image","title":"Inauguration of Institut Lafayette","body":null,"created":"1449244726","gmt_created":"2015-12-04 15:58:46","changed":"1475895017","gmt_changed":"2016-10-08 02:50:17","alt":"Inauguration of Institut Lafayette","file":{"fid":"199815","name":"dsc_5166.jpg","image_path":"\/sites\/default\/files\/images\/dsc_5166_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/dsc_5166_0.jpg","mime":"image\/jpeg","size":6153981,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/dsc_5166_0.jpg?itok=8nKVcd1R"}}},"media_ids":["309081"],"related_links":[{"url":"http:\/\/lafayette.gatech.edu\/","title":"Institut Lafayette"},{"url":"http:\/\/www.lorraine.gatech.edu\/","title":"Georgia Tech-Lorraine"},{"url":"http:\/\/www.umi2958.eu\/","title":"Georgia Tech CNRS"},{"url":"http:\/\/www.cope.gatech.edu\/","title":"COPE"},{"url":"http:\/\/www.ien.gatech.edu\/","title":"Institute for Electronics and Nanotechnology"}],"groups":[{"id":"1273","name":"Center for Organic Photonics and Electronics (COPE)"}],"categories":[{"id":"141","name":"Chemistry and Chemical Engineering"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"150","name":"Physics and Physical Sciences"}],"keywords":[{"id":"918","name":"COPE"},{"id":"609","name":"electronics"},{"id":"174","name":"Europe"},{"id":"1499","name":"Institute"},{"id":"4817","name":"lafayette"},{"id":"1692","name":"materials"},{"id":"107","name":"Nanotechnology"},{"id":"167686","name":"Semiconductors"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}},"301351":{"#nid":"301351","#data":{"type":"news","title":"Swaminathan Recognized with IEEE CPMT Accolade","body":[{"value":"\u003Cp\u003EMadhavan Swaminathan received the 2014 IEEE Components, Packaging, and Manufacturing Technology Society Outstanding Sustained Technical Contribution Award on May 29 at the IEEE Electronic Components Technology Conference, held in Lake Buena Vista, Florida.\u003C\/p\u003E\u003Cp\u003ESwaminathan was honored \u0022for significant and sustained contributions that have helped shape the design aspects of packaging in the areas of power delivery, system on package technologies, and 3D integration.\u0022\u003C\/p\u003E\u003Cp\u003EA faculty member in the Georgia Tech School of Electrical and Computer Engineering since 1994, Swaminathan holds the John Pippin Chair in Electromagnetics, and he is the director of the Interconnect and Packaging Center. He previously served as the deputy director of the Microsystems Packaging Research Center from 2004-2008.\u003C\/p\u003E\u003Cp\u003ESwaminathan leads the Mixed Signal Design Group in ECE, where he and his team conduct research in computational electromagnetics, multi-physics modeling, computer-aided design, 3D integration, nano materials, microwave design, RF sensors, and high-speed signaling.\u003C\/p\u003E\u003Cp\u003EHe has published more than 400 technical articles, holds 27 issued patents, and is the author and co-editor of three books, all related to electronic packaging. He is the co-founder and founder, respectively, of two spin-off companies, Jacket Micro Devices and E-System Design.\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EECE Professor Madhavan Swaminathan received the 2014 IEEE Components, Packaging, and Manufacturing Technology Society Outstanding Sustained Technical Contribution Award on May 29 at the IEEE Electronic Components Technology Conference, held in Lake Buena Vista, Florida.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"ECE Professor Madhavan Swaminathan received the 2014 IEEE Components, Packaging, and Manufacturing Technology Society (CPMT) Outstanding Sustained Technical Contribution Award on May 29 at the IEEE Electronic Components Technology Conference."}],"uid":"27241","created_gmt":"2014-06-04 14:55:27","changed_gmt":"2016-10-08 03:16:33","author":"Jackie Nemeth","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2014-06-04T00:00:00-04:00","iso_date":"2014-06-04T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"301341":{"id":"301341","type":"image","title":"Madhavan Swaminathan","body":null,"created":"1449244572","gmt_created":"2015-12-04 15:56:12","changed":"1475895004","gmt_changed":"2016-10-08 02:50:04","alt":"Madhavan Swaminathan","file":{"fid":"199552","name":"madhavanswaminathan131021br459_web.jpg","image_path":"\/sites\/default\/files\/images\/madhavanswaminathan131021br459_web_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/madhavanswaminathan131021br459_web_0.jpg","mime":"image\/jpeg","size":4110863,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/madhavanswaminathan131021br459_web_0.jpg?itok=EFX1-Tlq"}}},"media_ids":["301341"],"related_links":[{"url":"http:\/\/www.gatech.edu\/","title":"Georgia Tech"},{"url":"http:\/\/www.ece.gatech.edu\/","title":"School of Electrical and Computer Engineering"},{"url":"http:\/\/www.ece.gatech.edu\/faculty-staff\/fac_profiles\/bio.php?id=100","title":"Madhavan Swaminathan"},{"url":"https:\/\/www.ectc.net\/","title":"IEEE Electronic Components Technology Conference"}],"groups":[{"id":"1255","name":"School of Electrical and Computer Engineering"}],"categories":[{"id":"134","name":"Student and Faculty"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"135","name":"Research"},{"id":"150","name":"Physics and Physical Sciences"}],"keywords":[{"id":"109","name":"Georgia Tech"},{"id":"94741","name":"IEEE Electronic Components Technology Conference"},{"id":"13096","name":"Interconnect and Packaging Center"},{"id":"24251","name":"Madhavan Swaminathan"},{"id":"166855","name":"School of Electrical and Computer Engineering"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EJackie Nemeth\u003C\/p\u003E\u003Cp\u003ESchool of Electrical and Computer Engineering\u003C\/p\u003E\u003Cp\u003E404-894-2906\u003C\/p\u003E\u003Cp\u003E\u003Ca href=\u0022mailto:jackie.nemeth@ece.gatech.edu\u0022\u003Ejackie.nemeth@ece.gatech.edu\u003C\/a\u003E\u003C\/p\u003E","format":"limited_html"}],"email":["jackie.nemeth@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"156961":{"#nid":"156961","#data":{"type":"news","title":"Boeing Joins Georgia Tech Center for Organic Photonics and Electronics","body":[{"value":"\u003Cp\u003EBoeing [NYSE: BA] has joined the Center for Organic Photonics at Georgia Institute of Technology as a member of the Center\u2019s \u003Cem\u003EIndustrial Affiliates Program\u003C\/em\u003E.\u0026nbsp;\u003C\/p\u003E\u003Cp\u003EAs a member of the program, Boeing will connect to the faculty expertise and highly trained students and graduates of the center as well as an international network of partners in the field of organic photonics and electronics. This includes information on the latest research and discoveries and invitations to exclusive events.\u003C\/p\u003E\u003Cp\u003E\u201cWe\u2019ve joined this center to have access to the state of the art conductive and electro-active technology base that has been assembled at Georgia Tech,\u201d said Patrick Kinlen of Boeing Research \u0026amp; Technology Materials, Processes \u0026amp; Structures Technologies. \u201cThis technology has impact for Boeing in the area of conductive coatings, photovoltaics, electrochromics and energy storage.\u201d\u003C\/p\u003E\u003Cp\u003E\u201cCOPE is extremely pleased to count Boeing among its industrial affiliates,\u201d said Bernard Kippelen, Georgia Tech director of the center. \u201cHaving a company with a long tradition of aerospace leadership and innovation like The Boeing Company join our center speaks for the strong potential that COPE\u2019s technological innovations can have in the future of commercial jetliners, and in defense, space and security applications.\u201d \u0026nbsp;\u0026nbsp;\u0026nbsp;\u0026nbsp;\u003C\/p\u003E\u003Cp\u003EBoeing is the world\u2019s largest aerospace company and leading manufacturer of commercial jetliners and defense, space and security systems. A top U.S. exporter, the company supports airlines and U.S. and allied government customers in 150 countries. Boeing products and tailored services include commercial and military aircraft, satellites, weapons, electronic and defense systems, launch systems, advanced information and communications systems, and performance-based logistics and training.\u003C\/p\u003E\u003Cp\u003EBoeing Research \u0026amp; Technology is the advanced, central research and development organization of Boeing. It provides innovative technologies that enable the development of future aerospace solutions while improving the cycle time, cost, quality and performance of current aerospace products and services.\u0026nbsp;\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EBoeing is the world\u2019s largest aerospace company and leading manufacturer of commercial jetliners and defense, space and security systems. A top U.S. exporter, the company supports airlines and U.S. and allied government customers in 150 countries. Boeing products and tailored services include commercial and military aircraft, satellites, weapons, electronic and defense systems, launch systems, advanced information and communications systems, and performance-based logistics and training.\u0026nbsp;\u003C\/p\u003E\u003Cp\u003EAs a member of the program, Boeing will connect to the faculty expertise and highly trained students and graduates of the center as well as an international network of partners in the field of organic photonics and electronics. This includes insider information on the latest research and discoveries and invitations to exclusive events.\u003C\/p\u003E\u003Cp\u003E\u003Cem\u003E\u003Cbr \/\u003E\u003C\/em\u003E\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"Boeing [NYSE: BA] has joined the Center for Organic Photonics at Georgia Institute of Technology as a member of the Center\u2019s Industrial Affiliates Program"}],"uid":"27185","created_gmt":"2012-09-25 15:42:17","changed_gmt":"2016-10-08 03:12:50","author":"Jason Martin","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2012-09-27T00:00:00-04:00","iso_date":"2012-09-27T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"156971":{"id":"156971","type":"image","title":"Boeing Logo","body":null,"created":"1449178872","gmt_created":"2015-12-03 21:41:12","changed":"1475894792","gmt_changed":"2016-10-08 02:46:32","alt":"Boeing Logo","file":{"fid":"195314","name":"boeing.png","image_path":"\/sites\/default\/files\/images\/boeing_0.png","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/boeing_0.png","mime":"image\/png","size":2999,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/boeing_0.png?itok=5USo3bjW"}}},"media_ids":["156971"],"related_links":[{"url":"http:\/\/www.boeing.com\/","title":"More about Boeing"},{"url":"http:\/\/www.gatech.edu\/","title":"Georgia Tech"},{"url":"http:\/\/www.cope.gatech.edu\/","title":"COPE"}],"groups":[{"id":"1273","name":"Center for Organic Photonics and Electronics (COPE)"}],"categories":[{"id":"141","name":"Chemistry and Chemical Engineering"},{"id":"144","name":"Energy"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"150","name":"Physics and Physical Sciences"}],"keywords":[{"id":"4358","name":"boeing"},{"id":"44501","name":"conductive coatings"},{"id":"918","name":"COPE"},{"id":"4995","name":"electrochromics"},{"id":"609","name":"electronics"},{"id":"44511","name":"energy storage"},{"id":"19411","name":"industrial affiliates program"},{"id":"2290","name":"photonics"},{"id":"953","name":"photovoltaics"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003E\u003Cstrong\u003EDaryl Stephenson\u003C\/strong\u003E\u003Cbr \/\u003E Boeing Research \u0026amp; Technology Communications\u003Cbr \/\u003E +1 314-232-8203\u003Cbr \/\u003E\u003Ca href=\u0022mailto:daryl.l.stephenson@boeing.com\u0022\u003EEmail\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003EJason Martin\u003C\/strong\u003E\u003Cbr \/\u003EGerogia Tech - Center for Organic Photonics and Electronics\u003Cbr \/\u003E+1 404-385-3138\u003Cbr \/\u003E\u003Ca href=\u0022mailto:jason.martin@chemistry.gatech.edu\u0022\u003EEmail\u003C\/a\u003E\u003C\/p\u003E","format":"limited_html"}],"email":[],"slides":[],"orientation":[],"userdata":""}},"582270":{"#nid":"582270","#data":{"type":"news","title":"Ryan Bahr Chosen for GOMACTech 2016 Best Poster Paper Award","body":[{"value":"\u003Cp\u003ERyan Bahr was chosen for the Best Student Poster Paper Award at the GOMACTech 2016 Conference, held March 14-17 in Orlando, Florida. He will be presented with the award at the 2017 GOMACTech Conference, to be held March 20-23 in Reno, Nevada.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EBahr is a Ph.D. student in the Georgia Tech School of Electrical and Computer Engineering (ECE). He shares this honor with his three coauthors, fellow ECE Ph.D. students Jimmy Hester and John Kimionis, and ECE Professor Emmanouil M. (Manos) Tentzeris, who serves as the Ph.D. advisor for all three students and is the Ken Byers Professor in Flexible Electronics.\u003C\/p\u003E\r\n\r\n\u003Cp\u003ETheir poster paper, \u0026ldquo;Additively Manufactured Flexible \u0026amp; Origami-Reconfigurable RF Sensors,\u0026rdquo; dealt with using novel wireless communication, sensor, and energy harvesting modules on low-cost substrates like paper, plastics, and fabrics, using in-house developed inkjet- and 3D-printed techniques. These modules could find numerous applications in the areas of defense, quality of life, biomonitoring, food quality monitoring, logistics, and the Internet of Things.\u003C\/p\u003E\r\n\r\n\u003Cp\u003EGOMACTech primarily reviews developments in microcircuit applications for government systems. Established in 1968, the conference has focused on advances in systems developed by the U.S. Department of Defense and other government agencies. It is also used to announce major government microelectronics initiatives and provides a forum for government reviews.\u003C\/p\u003E\r\n","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EECE Ph.D. student\u0026nbsp;Ryan Bahr was chosen for the GOMACTech 2016 Best Student Poster Paper Award.\u003C\/p\u003E\r\n","format":"limited_html"}],"field_summary_sentence":[{"value":"ECE Ph.D. student Ryan Bahr was chosen for the GOMACTech 2016 Best Student Poster Paper Award."}],"uid":"27241","created_gmt":"2016-10-07 15:04:51","changed_gmt":"2016-10-07 15:04:51","author":"Jackie Nemeth","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2016-10-07T00:00:00-04:00","iso_date":"2016-10-07T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"582267":{"id":"582267","type":"image","title":"Ryan Bahr","body":null,"created":"1475850838","gmt_created":"2016-10-07 14:33:58","changed":"1475850838","gmt_changed":"2016-10-07 14:33:58","alt":"","file":{"fid":"221951","name":"ryan_bahr.jpg","image_path":"\/sites\/default\/files\/images\/ryan_bahr.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/ryan_bahr.jpg","mime":"image\/jpeg","size":646696,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/ryan_bahr.jpg?itok=k3aTjba4"}}},"media_ids":["582267"],"related_links":[{"url":"http:\/\/www.ece.gatech.edu","title":"School of Electrical and Computer Engineering"},{"url":"http:\/\/www.athena.gatech.edu\/index.html","title":"ATHENA Group"},{"url":"http:\/\/www.gatech.edu","title":"Georgia Tech"},{"url":"https:\/\/www.gomactech.net","title":"GOMACTech Conference"}],"groups":[{"id":"1255","name":"School of Electrical and Computer Engineering"}],"categories":[{"id":"134","name":"Student and Faculty"},{"id":"8862","name":"Student Research"},{"id":"135","name":"Research"},{"id":"138","name":"Biotechnology, Health, Bioengineering, Genetics"},{"id":"144","name":"Energy"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"150","name":"Physics and Physical Sciences"}],"keywords":[{"id":"24571","name":"Emmanouil M. (Manos) Tentzeris"},{"id":"167023","name":"Ryan Bahr"},{"id":"5308","name":"RF Sensors"},{"id":"12373","name":"flexible electronics"},{"id":"167024","name":"GOMACTech Conference"},{"id":"167025","name":"ATHENA Lab"},{"id":"109","name":"Georgia Tech"}],"core_research_areas":[{"id":"39441","name":"Bioengineering and Bioscience"},{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39531","name":"Energy and Sustainable Infrastructure"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003E\u0026nbsp;\u003C\/p\u003E\r\n\r\n\u003Cp\u003EJackie Nemeth\u003C\/p\u003E\r\n\r\n\u003Cp\u003ESchool of Electrical and Computer Engineering\u003C\/p\u003E\r\n\r\n\u003Cp\u003E404-894-2906\u003C\/p\u003E\r\n","format":"limited_html"}],"email":["jackie.nemeth@ece.gatech.edu"],"slides":[],"orientation":[],"userdata":""}}}