505021 event 1456222614 1492118191 The goal of graphene electronics research has been to find a semiconducting form of graphene for use in devices. It has been recently shown that the buffer layer, the first layer of graphene on the SiC(0001) face, is a semiconductor with a band gap of >0.5eV. Now, two new semiconducting bands (with a band gap of >1.5eV) have been discovered which relate to a structured graphene geometry; metallic sidewall graphene nanoribbons seamlessly connect to a new form of semiconducting graphene, called terrace buffer. In this talk, we will present growth and structure data as well as ARPES measurements showing the new semiconducting graphene bands.  I will show what growth conditions lead to these new semiconducting bands.

]]> amorain@gatech.edu

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