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  <title><![CDATA[Illinois ECE Alumnus Shen Shares III-Nitride Power Electronics at MNTL]]></title>
  <body><![CDATA[<p>Students, faculty, and staff gathered at the Micro and Nanotechnology Laboratory (MNTL)&nbsp;the morning of Monday, June 27,&nbsp;to hear&nbsp;Professor Shyh-Chiang Shen&nbsp;(PhD ’01), visiting from the Georgia Institute of Technology, discuss III-Nitride Power Electronics. The ECE Illinois alumnus currently conducts research at the Center for Compound Semiconductors (CCS), which is led by fellow alumnus<strong>&nbsp;</strong>Russell Dupuis&nbsp;(PhD ’73, MS ’71, BSEE ’70).</p><p>In his presentation, Shen explained that silicon has become a favored substrate, but new research demonstrates the advantages of using Gallium Nitride (GaN) for next generation high power and high speed applications.</p><p><a href="http://www.ece.illinois.edu/newsroom/article/17876">Read the entire article on the ECE ILLINOIS web site</a></p>]]></body>
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      <value>2016-06-29T00:00:00-04:00</value>
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      <value><![CDATA[ECE Professor Shyh-Chiang Shen visited the University of Illinois at Urbana Champaign, where he gave a presentation on III-Nitride Power Electronics.]]></value>
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      <value><![CDATA[<p>ECE Professor Shyh-Chiang Shen&nbsp;visited the University of Illinois at Urbana Champaign, where he gave a presentation on III-Nitride Power Electronics.</p>]]></value>
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            <title><![CDATA[Shyh-Chiang Shen]]></title>
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      <email><![CDATA[jackie.nemeth@ece.gatech.edu]]></email>
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      <value><![CDATA[<p>Jackie Nemeth</p><p>School of Electrical and Computer Engineering</p><p>404-894-2906</p>]]></value>
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