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  <title><![CDATA[Semiconductor Nanowires for Optoelectronic and Energy Applications]]></title>
  <body><![CDATA[<p><strong>Abstract:</strong><br />
The excitement of nanowire research is due to the unique electronic and optical properties of these nanostructures. Both axial and radial heterostructure nanowires have been proposed as nano-building blocks for next-generation devices, which are expected to revolutionise our technological world.</p>

<p>The unique properties stem from their large surface area-to-volume ratio, very high aspect ratio, and carrier and photon confinement in two dimensions.</p>

<p>These nanowires are usually grown by the so-called vapor-liquid-solid mechanism, which relies on a metal nanoparticle to catalyze and seed the growth. An alternative technique to grow the nanowires is by selective area growth technique, where a dielectric mask is first patterned on the substrate prior to growth.</p>

<p>In this talk, Hoe Tan&nbsp;will present an overview of compound semiconductor nanowire research activities at The Australian National University. The optical and structural properties of binary and ternary III-V nanowires including GaAs, InGaAs, InP, and GaAsSb nanowires grown by metal-organic vapor-phase epitaxy will be presented. Various issues such as tapering of the nanowires, compositional non-uniformity along nanowires, crystal structure, carrier lifetime, and polarization effect will be discussed.</p>

<p>Tan will also present his group&#39;s results of III-V nanowires grown on Si substrates, which are of great interests for the integration of nano-optoelectronic devices on Si platforms. Their results of enhancing the quantum efficiency of nanowires by using plasmonics are promising to improve the performance of nanowire devices.</p>

<p>Finally, the results from nanowire lasers, photodetectors, solar cells, and photoelectrodes for water splitting will be presented.</p>

<p><strong>About the Speaker:</strong><br />
Hoe Tan heads&nbsp;the Department of Electronic Materials Engineering at the Research School of Physics and Engineering, The Australian National University.</p>

<p>He received his B.E. (Hons) in Electrical Engineering from the University of Melbourne in 1992, after which he worked with Osram in Malaysia as a quality assurance engineer. In 1997, he was awarded the PhD degree from The Australian National University for his dissertation on &quot;Ion beam effects in GaAs-AlGaAs materials and devices.&quot;&nbsp;</p>

<p>He has been the past recipient of the Australian Research Council Postdoctoral, QEII, and Future Fellowships. He has published/co-published over 350 journal papers, including four book chapters. He is also a co-inventor in four&nbsp;US patents related to laser diodes and infrared photodetectors.</p>

<p>His research interests include epitaxial growth of low-dimensional compound semiconductors, nanostructured optoelectronic devices and ion-implantation processing of compound semiconductors for optoelectronic device applications.</p>

<p>Tan is a Senior Member of the IEEE.</p>
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      <value><![CDATA[A seminar by Hoe Tan, Australian National University, for the Joint OPA-IPS Invited Speaker Series at Georgia Tech]]></value>
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      <value><![CDATA[<p>Semiconductor nanowires for optoelectronic and energy applications.</p>
]]></value>
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      <value><![CDATA[2017-06-07T13:00:00-04:00]]></value>
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            <title><![CDATA[Hoe Tan, Australian National University]]></title>
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      <value><![CDATA[<p>Tianren Fan&nbsp;<br />
<a href="mailto:tianren.fan@gatech.edu">tianren.fan@gatech.edu</a></p>

<p>&nbsp;</p>
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