{"274031":{"#nid":"274031","#data":{"type":"news","title":"Ballistic Transport in Graphene Suggests New Type of Electronic Device","body":[{"value":"\u003Cp\u003EUsing electrons more like photons could provide the foundation for a new type of electronic device that would capitalize on the ability of graphene to carry electrons with almost no resistance even at room temperature \u2013 a property known as ballistic transport.\u003C\/p\u003E\u003Cp\u003EResearch reported this week shows that electrical resistance in nanoribbons of epitaxial graphene changes in discrete steps following quantum mechanical principles. The research shows that the graphene nanoribbons act more like optical waveguides or quantum dots, allowing electrons to flow smoothly along the edges of the material. In ordinary conductors such as copper, resistance increases in proportion to the length as electrons encounter more and more impurities while moving through the conductor.\u003C\/p\u003E\u003Cp\u003EThe ballistic transport properties, similar to those observed in cylindrical carbon nanotubes, exceed theoretical conductance predictions for graphene by a factor of 10. The properties were measured in graphene nanoribbons approximately 40 nanometers wide that had been grown on the edges of three-dimensional structures etched into silicon carbide wafers.\u003C\/p\u003E\u003Cp\u003E\u201cThis work shows that we can control graphene electrons in very different ways because the properties are really exceptional,\u201d said \u003Ca href=\u0022https:\/\/www.physics.gatech.edu\/user\/walter-de-heer\u0022\u003EWalt de Heer\u003C\/a\u003E, a Regent\u2019s professor in the \u003Ca href=\u0022http:\/\/www.physics.gatech.edu\/\u0022\u003ESchool of Physics\u003C\/a\u003E at the Georgia Institute of Technology. \u201cThis could result in a new class of coherent electronic devices based on room temperature ballistic transport in graphene. Such devices would be very different from what we make today in silicon.\u201d\u003C\/p\u003E\u003Cp\u003EThe research, which was supported by the National Science Foundation, the Air Force Office of Scientific Research and the W.M. Keck Foundation, was reported February 5 in the journal \u003Cem\u003ENature\u003C\/em\u003E. The research was done through a collaboration of scientists from Georgia Tech in the United States, Leibniz Universit\u00e4t Hannover in Germany, the Centre National de la Recherche Scientifique (CNRS) in France and Oak Ridge National Laboratory \u2013 supported by the Department of Energy \u2013 in the United States.\u003C\/p\u003E\u003Cp\u003EFor nearly a decade, researchers have been trying to use the unique properties of graphene to create electronic devices that operate much like existing silicon semiconductor chips. But those efforts have met with limited success because graphene \u2013 a lattice of carbon atoms that can be made as little as one layer thick \u2013 cannot be easily given the electronic bandgap that such devices need to operate.\u003C\/p\u003E\u003Cp\u003EDe Heer argues that researchers should stop trying to use graphene like silicon, and instead use its unique electron transport properties to design new types of electronic devices that could allow ultra-fast computing \u2013 based on a new approach to switching. Electrons in the graphene nanoribbons can move tens or hundreds of microns without scattering.\u003C\/p\u003E\u003Cp\u003E\u201cThis constant resistance is related to one of the fundamental constants of physics, the conductance quantum,\u201d de Heer said. \u201cThe resistance of this channel does not depend on temperature, and it does not depend on the amount of current you are putting through it.\u201d\u003C\/p\u003E\u003Cp\u003EWhat does disrupt the flow of electrons, however, is measuring the resistance with an electrical probe. The measurements showed that touching the nanoribbons with a single probe doubles the resistance; touching it with two probes triples the resistance.\u003C\/p\u003E\u003Cp\u003E\u201cThe electrons hit the probe and scatter,\u201d explained de Heer. \u201cIt\u2019s a lot like a stream in which water is flowing nicely until you put rocks in the way. We have done systematic studies to show that when you touch the nanoribbons with a probe, you introduce a method for the electrons to scatter, and that changes the resistance.\u201d\u003C\/p\u003E\u003Cp\u003EThe nanoribbons are grown epitaxially on silicon carbon wafers into which patterns have been etched using standard microelectronics fabrication techniques. When the wafers are heated to approximately 1,000 degrees Celsius, silicon is preferentially driven off along the edges, forming graphene nanoribbons whose structure is determined by the pattern of the three-dimensional surface. Once grown, the nanoribbons require no further processing.\u003C\/p\u003E\u003Cp\u003EThe advantage of fabricating graphene nanoribbons this way is that it produces edges that are perfectly smooth, annealed by the fabrication process. The smooth edges allow electrons to flow through the nanoribbons without disruption. If traditional etching techniques are used to cut nanoribbons from graphene sheets, the resulting edges are too rough to allow ballistic transport.\u003C\/p\u003E\u003Cp\u003E\u201cIt seems that the current is primarily flowing on the edges,\u201d de Heer said. \u201cThere are other electrons in the bulk portion of the nanoribbons, but they do not interact with the electrons flowing at the edges.\u201d\u003C\/p\u003E\u003Cp\u003EThe electrons on the edge flow more like photons in optical fiber, helping them avoid scattering. \u201cThese electrons are really behaving more like light,\u201d he said. \u201cIt is like light going through an optical fiber. Because of the way the fiber is made, the light transmits without scattering.\u201d\u003C\/p\u003E\u003Cp\u003EThe researchers measured ballistic conductance in the graphene nanoribbons for up to 16 microns. Electron mobility measurements surpassing one million correspond to a sheet resistance of one ohm per square that is two orders of magnitude lower than what is observed in two-dimensional graphene \u2013 and ten times smaller than the best theoretical predictions for graphene.\u003C\/p\u003E\u003Cp\u003E\u201cThis should enable a new way of doing electronics,\u201d de Heer said. \u201cWe are already able to steer these electrons and we can switch them using rudimentary means. We can put a roadblock, and then open it up again. New kinds of switches for this material are now on the horizon.\u201d\u003C\/p\u003E\u003Cp\u003ETheoretical explanations for what the researchers have measured are incomplete. De Heer speculates that the graphene nanoribbons may be producing a new type of electronic transport similar to what is observed in superconductors. \u0026nbsp;\u003C\/p\u003E\u003Cp\u003E\u201cThere is a lot of fundamental physics that needs to be done to understand what we are seeing,\u201d he added. \u201cWe believe this shows that there is a real possibility for a new type of graphene-based electronics.\u201d\u003C\/p\u003E\u003Cp\u003EGeorgia Tech researchers have pioneered graphene-based electronics since 2001, for which they hold a patent, filed in 2003. The technique involves etching patterns into electronics-grade silicon carbide wafers, then heating the wafers to drive off silicon, leaving patterns of graphene.\u003C\/p\u003E\u003Cp\u003EIn addition to de Heer, the paper\u2019s authors included Jens Baringhaus, Frederik Edler and Christoph Tegenkamp from the Institut f\u00fcr Festk\u00f6rperphysik, Leibniz Universit\u00e4t, Hannover in Germany; Edward Conrad, Ming Ruan and Zhigang Jiang from the School of Physics at Georgia Tech; Claire Berger from Georgia Tech and Institut N\u00e9el at the Centre National de la Recherche Scientifique (CNRS) in France; Antonio Tejeda and Muriel Sicot from the Institut Jean Lamour, Universite de Nancy, Centre National de la Recherche Scientifique (CNRS) in France; An-Ping Li from the Center for Nanophase Materials Sciences at Oak Ridge National Laboratory, and Amina Taleb-Ibrahimi from the CNRS Synchotron SOLEIL in France.\u003C\/p\u003E\u003Cp\u003EThis research was supported by the National Science Foundation (NSF) Materials Research Science and Engineering Center (MRSEC) at Georgia Tech through award DMR-0820382; the Air Force Office of Scientific Research (AFOSR); the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy, and the Partner University Fund from the Embassy of France. Any conclusions or recommendations are those of the authors and do not necessarily represent the official views of the NSF, DOE or AFOSR.\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003ECITATION\u003C\/strong\u003E: Jens Baringhaus, et al., \u201cExceptional ballistic transport in epitaxial graphene nanoribbons,\u201d (Nature 2013). (\u003Ca href=\u0022http:\/\/dx.doi.org\/10.1038\/nature12952\u0022\u003Ehttp:\/\/dx.doi.org\/10.1038\/nature12952\u003C\/a\u003E).\u003Cbr \/\u003E\u003Cbr \/\u003E\u003Cstrong\u003EResearch News\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cstrong\u003EGeorgia Institute of Technology\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cstrong\u003E177 North Avenue\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cstrong\u003EAtlanta, Georgia\u0026nbsp; 30332-0181\u0026nbsp; USA\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cbr \/\u003E\u003Cstrong\u003EMedia Relations Contacts\u003C\/strong\u003E: John Toon (404-894-6986) (\u003Ca href=\u0022mailto:jtoon@gatech.edu\u0022\u003Ejtoon@gatech.edu\u003C\/a\u003E) or Brett Israel (404-385-1933) (\u003Ca href=\u0022mailto:brett.israel@comm.gatech.edu\u0022\u003Ebrett.israel@comm.gatech.edu\u003C\/a\u003E).\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003EWriter\u003C\/strong\u003E: John Toon\u003Cbr \/\u003E\u003Cbr \/\u003E\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EUsing electrons more like photons could provide the foundation for a new type of electronic device that would capitalize on the ability of graphene to carry electrons with almost no resistance even at room temperature \u2013 a property known as ballistic transport.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"Using electrons more like photons could provide the foundation for a new type of electronic device that would capitalize on the ability of graphene to carry electrons with almost no resistance."}],"uid":"27303","created_gmt":"2014-02-05 11:38:02","changed_gmt":"2016-10-08 03:15:51","author":"John Toon","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2014-02-05T00:00:00-05:00","iso_date":"2014-02-05T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"274011":{"id":"274011","type":"image","title":"Ballistic Transport in Graphene Nanoribbons","body":null,"created":"1449244112","gmt_created":"2015-12-04 15:48:32","changed":"1475894964","gmt_changed":"2016-10-08 02:49:24","alt":"Ballistic Transport in Graphene Nanoribbons","file":{"fid":"198711","name":"graphene-nanoribbons.jpg","image_path":"\/sites\/default\/files\/images\/graphene-nanoribbons_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/graphene-nanoribbons_0.jpg","mime":"image\/jpeg","size":1120437,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/graphene-nanoribbons_0.jpg?itok=-qqd5pwt"}},"274001":{"id":"274001","type":"image","title":"Walt de Heer - Ballistic Transport","body":null,"created":"1449244112","gmt_created":"2015-12-04 15:48:32","changed":"1475894964","gmt_changed":"2016-10-08 02:49:24","alt":"Walt de Heer - Ballistic Transport","file":{"fid":"198710","name":"walt-de-heer.jpg","image_path":"\/sites\/default\/files\/images\/walt-de-heer_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/walt-de-heer_0.jpg","mime":"image\/jpeg","size":947684,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/walt-de-heer_0.jpg?itok=IEGnB69-"}}},"media_ids":["274011","274001"],"groups":[{"id":"1188","name":"Research Horizons"}],"categories":[{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"135","name":"Research"},{"id":"150","name":"Physics and Physical Sciences"}],"keywords":[{"id":"85841","name":"ballistic transport"},{"id":"9116","name":"epitaxial graphene"},{"id":"429","name":"graphene"},{"id":"12423","name":"nanoribbons"},{"id":"166937","name":"School of Physics"},{"id":"12422","name":"Walt de Heer"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[{"id":"71881","name":"Science and Technology"}],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EJohn Toon\u003C\/p\u003E\u003Cp\u003EResearch News\u003C\/p\u003E\u003Cp\u003E\u003Ca href=\u0022mailto:jtoon@gatech.edu\u0022\u003Ejtoon@gatech.edu\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003E(404) 894-6986\u003C\/p\u003E","format":"limited_html"}],"email":["jtoon@gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"255471":{"#nid":"255471","#data":{"type":"news","title":"Chemically Engineered Graphene-Based 2D Organic Molecular Magnet","body":[{"value":"\u003Cp\u003ECarbon-based magnetic materials and structures of mesoscopic dimensions may offer unique opportunities for future nanomagnetoelectronic\/spintronic devices. To achieve their potential, carbon nanosystems must have controllable magnetic properties. We demonstrate that nitrophenyl functionalized graphene can act as a room-temperature 2D magnet. We report a comprehensive study of low-temperature magnetotransport, vibrating sample magnetometry (VSM), and superconducting quantum interference (SQUID) measurements before and after radical functionalization. Following nitrophenyl (NP) functionalization, epitaxially grown graphene systems can become organic molecular magnets with ferromagnetic and antiferromagnetic ordering that persists at temperatures above 400 K. The field-dependent, surface magnetoelectric properties were studied using scanning probe microscopy (SPM) techniques. The results indicate that the NP-functionalization orientation and degree of coverage directly affect the magnetic properties of the graphene surface. In addition, graphene-based organic magnetic nanostructures were found to demonstrate a pronounced magneto-optical Kerr effect (MOKE). The results were consistent across different characterization techniques and indicate room-temperature magnetic ordering along preferred graphene orientations in the NP-functionalized samples. Chemically isolated graphene nanoribbons (CINs) were observed along the preferred functionality directions. These results pave the way for future magnetoelectronic\/spintronic applications based on promising concepts such as current-induced magnetization switching, magnetoelectricity, half-metallicity, and quantum tunneling of magnetization.\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003ECarbon-based magnetic materials and structures of mesoscopic dimensions may offer unique opportunities for future nanomagnetoelectronic\/spintronic devices. To achieve their potential, carbon nanosystems must have controllable magnetic properties. We demonstrate that nitrophenyl functionalized graphene can act as a room-temperature 2D magnet. We report a comprehensive study of low-temperature magnetotransport, vibrating sample magnetometry (VSM), and superconducting quantum interference (SQUID) measurements before and after radical functionalization.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"We demonstrate that nitrophenyl functionalized graphene can act as a room-temperature 2D magnet."}],"uid":"27428","created_gmt":"2013-11-15 16:50:34","changed_gmt":"2016-10-08 03:15:22","author":"Gina Adams","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2013-10-25T00:00:00-04:00","iso_date":"2013-10-25T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"256571":{"id":"256571","type":"image","title":"Figure 1","body":null,"created":"1449243846","gmt_created":"2015-12-04 15:44:06","changed":"1475894936","gmt_changed":"2016-10-08 02:48:56","alt":"Figure 1","file":{"fid":"198227","name":"figure1_0.jpeg","image_path":"\/sites\/default\/files\/images\/figure1_0_0.jpeg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/figure1_0_0.jpeg","mime":"image\/jpeg","size":586298,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/figure1_0_0.jpeg?itok=BJD6R9mN"}}},"media_ids":["256571"],"related_links":[{"url":"http:\/\/pubs.acs.org\/doi\/abs\/10.1021\/nn403939r","title":"ACS Nano"}],"groups":[{"id":"60783","name":"MRSEC"}],"categories":[{"id":"42941","name":"Art Research"}],"keywords":[{"id":"9116","name":"epitaxial graphene"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}},"255231":{"#nid":"255231","#data":{"type":"news","title":"Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors","body":[{"value":"\u003Cp\u003EThe maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high {\\kappa} dielectric T-gate and self-aligned contacts, further contributed to the record-breaking fmax.\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EThe maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high {\\kappa} dielectric T-gate and self-aligned contacts, further contributed to the record-breaking fmax.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC."}],"uid":"27428","created_gmt":"2013-11-15 15:02:20","changed_gmt":"2016-10-08 03:15:22","author":"Gina Adams","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2013-02-21T00:00:00-05:00","iso_date":"2013-02-21T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"related_links":[{"url":"http:\/\/pubs.acs.org\/doi\/abs\/10.1021\/nl303587r","title":"NANO Letters"}],"groups":[{"id":"60783","name":"MRSEC"}],"categories":[{"id":"42941","name":"Art Research"}],"keywords":[{"id":"9116","name":"epitaxial graphene"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}},"255241":{"#nid":"255241","#data":{"type":"news","title":"A method to extract pure Raman spectrum of epitaxial graphene on SiC","body":[{"value":"\u003Cp\u003EAuthors:\u0026nbsp; \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Kunc_J\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EJan Kunc\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Hu_Y\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EYike Hu\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Palmer_J\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EJames Palmer\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Berger_C\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EClaire Berger\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Heer_W\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EWalter A. de Heer\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003EA method is proposed to extract pure Raman spectrum of epitaxial graphene on SiC by using a Non-negative Matrix Factorization. It overcomes problems of negative spectral intensity and poorly resolved spectra resulting from a simple subtraction of a SiC background from the experimental data. We also show that the method is similar to deconvolution, for spectra composed of multiple sub- micrometer areas, with the advantage that no prior information on the impulse response functions is needed. We have used this property to characterize the Raman laser beam. The method capability in efficient data smoothing is also demonstrated\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EA method is proposed to extract pure Raman spectrum of epitaxial graphene on SiC by using a Non-negative Matrix Factorization. It overcomes problems of negative spectral intensity and poorly resolved spectra resulting from a simple subtraction of a SiC background from the experimental data. We also show that the method is similar to deconvolution, for spectra composed of multiple sub- micrometer areas, with the advantage that no prior information on the impulse response functions is needed. We have used this property to characterize the Raman laser beam. The method capability in efficient data smoothing is also demonstrated\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"A method is proposed to extract pure Raman spectrum of epitaxial graphene on SiC by using a Non-negative Matrix Factorization"}],"uid":"27428","created_gmt":"2013-11-15 15:12:57","changed_gmt":"2016-10-08 03:15:22","author":"Gina Adams","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2013-07-01T00:00:00-04:00","iso_date":"2013-07-01T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"257371":{"id":"257371","type":"image","title":"A method to extract pure Raman spectrum of epitaxial graphene on SiC","body":null,"created":"1449243856","gmt_created":"2015-12-04 15:44:16","changed":"1475894938","gmt_changed":"2016-10-08 02:48:58","alt":"A method to extract pure Raman spectrum of epitaxial graphene on SiC","file":{"fid":"198254","name":"2_4.jpg","image_path":"\/sites\/default\/files\/images\/2_4_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/2_4_0.jpg","mime":"image\/jpeg","size":598413,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/2_4_0.jpg?itok=DqZVHohh"}}},"media_ids":["257371"],"related_links":[{"url":"http:\/\/arxiv.org\/pdf\/1307.0421.pdf","title":"http:\/\/arxiv.org\/pdf\/1307.0421.pdf"}],"groups":[{"id":"60783","name":"MRSEC"}],"categories":[{"id":"42941","name":"Art Research"}],"keywords":[{"id":"9116","name":"epitaxial graphene"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}},"255261":{"#nid":"255261","#data":{"type":"news","title":"Highly efficient spin transport in epitaxial graphene on SiC","body":[{"value":"\u003Cp\u003EAuthors:\u0026nbsp; \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Dlubak_B\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EBruno Dlubak\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Martin_M\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EMarie-Blandine Martin\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Deranlot_C\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003ECyrile Deranlot\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Servet_B\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EBernard Servet\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Xavier_S\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003ESt\u00e9phane Xavier\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Mattana_R\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003ERichard Mattana\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Sprinkle_M\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EMike Sprinkle\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Berger_C\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EClaire Berger\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Heer_W\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EWalt A. De Heer\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Petroff_F\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EFr\u00e9d\u00e9ric Petroff\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Anane_A\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EAbdelmadjid Anane\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Seneor_P\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EPierre Seneor\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Fert_A\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EAlbert Fert\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003ESpin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer\/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting\/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 {\\mu}m. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen.\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003ESpin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer\/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"We report here on highly efficient spin transport in two-terminal polarizer\/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide"}],"uid":"27428","created_gmt":"2013-11-15 15:19:56","changed_gmt":"2016-10-08 03:15:22","author":"Gina Adams","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2013-07-07T00:00:00-04:00","iso_date":"2013-07-07T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"257361":{"id":"257361","type":"image","title":"Highly ef\ufb01cient spin transport in epitaxial graphene on SiC","body":null,"created":"1449243856","gmt_created":"2015-12-04 15:44:16","changed":"1475894938","gmt_changed":"2016-10-08 02:48:58","alt":"Highly ef\ufb01cient spin transport in epitaxial graphene on SiC","file":{"fid":"198253","name":"article6.jpg","image_path":"\/sites\/default\/files\/images\/article6_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/article6_0.jpg","mime":"image\/jpeg","size":87864,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/article6_0.jpg?itok=i33-bg4Y"}}},"media_ids":["257361"],"related_links":[{"url":"http:\/\/arxiv.org\/abs\/1307.1555","title":"http:\/\/arxiv.org\/abs\/1307.1555"}],"groups":[{"id":"60783","name":"MRSEC"}],"categories":[{"id":"42941","name":"Art Research"}],"keywords":[{"id":"9116","name":"epitaxial graphene"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}},"255431":{"#nid":"255431","#data":{"type":"news","title":"Probing terahertz surface plasmon waves in graphene structures","body":[{"value":"\u003Cp\u003EAuthors:\u0026nbsp; \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Mitrofanov_O\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EOleg Mitrofanov\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Yu_W\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EWenlong Yu\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Thompson_R\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003ERobert J. Thompson\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Jiang_Y\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EYuxuan Jiang\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Brener_I\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EIgal Brener\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Pan_W\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EWei Pan\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Berger_C\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EClaire Berger\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Heer_W\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EWalter A. de Heer\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Jiang_Z\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EZhigang Jiang\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003EEpitaxial graphene mesas and ribbons are investigated using terahertz (THz) nearfield microscopy to probe surface plasmon excitation and THz transmission properties on the sub-wavelength scale. The THz near-field images show variation of graphene properties on a scale smaller than the wavelength, and excitation of THz surface waves occurring at graphene edges, similar to that observed at metallic edges. The Fresnel reflection at the substrate SiC\/air interface is also found to be altered by the presence of graphene ribbon arrays, leading to either reduced or enhanced transmission of the THz wave depending on the wave polarization and the ribbon width.\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EEpitaxial graphene mesas and ribbons are investigated using terahertz (THz) nearfield microscopy to probe surface plasmon excitation and THz transmission properties on the sub-wavelength scale. The THz near-field images show variation of graphene properties on a scale smaller than the wavelength, and excitation of THz surface waves occurring at graphene edges, similar to that observed at metallic edges.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"Epitaxial graphene mesas and ribbons are investigated using terahertz (THz) nearfield microscopy to probe surface plasmon excitation and THz transmission properties on the sub-wavelength scale."}],"uid":"27428","created_gmt":"2013-11-15 16:18:29","changed_gmt":"2016-10-08 03:15:22","author":"Gina Adams","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2013-07-29T00:00:00-04:00","iso_date":"2013-07-29T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"257341":{"id":"257341","type":"image","title":"Probing terahertz surface plasmon waves in graphene structures","body":null,"created":"1449243856","gmt_created":"2015-12-04 15:44:16","changed":"1475894938","gmt_changed":"2016-10-08 02:48:58","alt":"Probing terahertz surface plasmon waves in graphene structures","file":{"fid":"198251","name":"article4.jpg","image_path":"\/sites\/default\/files\/images\/article4_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/article4_0.jpg","mime":"image\/jpeg","size":57480,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/article4_0.jpg?itok=XPrVhQrc"}}},"media_ids":["257341"],"related_links":[{"url":"http:\/\/arxiv.org\/abs\/1307.7374","title":"http:\/\/arxiv.org\/abs\/1307.7374"}],"groups":[{"id":"60783","name":"MRSEC"}],"categories":[{"id":"42941","name":"Art Research"}],"keywords":[{"id":"9116","name":"epitaxial graphene"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}},"255441":{"#nid":"255441","#data":{"type":"news","title":"Wafer bonding solution to epitaxial graphene \u2013 silicon integration","body":[{"value":"\u003Cp\u003EAuthors:\u0026nbsp; \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Dong_R\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003ERui Dong\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Guo_Z\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EZelei Guo\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Palmer_J\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EJames Palmer\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Hu_Y\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EYike Hu\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Ruan_M\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EMing Ruan\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Hankinson_J\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EJohn Hankinson\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Kunc_J\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EJan Kunc\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Bhattacharya_S\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003ESwapan K Bhattacharya\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Berger_C\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EClaire Berger\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Heer_W\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EWalt A. de Heer\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003EThe development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and subsequent graphene nano-patterning that degrades considerably the electronic mobility of nanopatterned graphene. Epitaxial graphene (EG) by contrast is grown on an essentially perfect crystalline (semi-insulating) surface, and graphene nanostructures with exceptional properties have been realized by a selective growth process on tailored SiC surface that requires no graphene patterning. However, the temperatures required in this structured growth process are too high for silicon technology. Here we demonstrate a new graphene to Si integration strategy, with a bonded and interconnected compact double-wafer structure. Using silicon-on-insulator technology (SOI) a thin monocrystalline silicon layer ready for CMOS processing is applied on top of epitaxial graphene on SiC. The parallel Si and graphene platforms are interconnected by metal vias. This method inspired by the industrial development of 3d hyper-integration stacking thin-film electronic devices preserves the advantages of epitaxial graphene and enables the full spectrum of CMOS processing.\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EThe development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and subsequent graphene nano-patterning that degrades considerably the electronic mobility of nanopatterned graphene.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"Here we demonstrate a new graphene to Si integration strategy, with a bonded and interconnected compact double-wafer structure."}],"uid":"27428","created_gmt":"2013-11-15 16:28:18","changed_gmt":"2016-10-08 03:15:22","author":"Gina Adams","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2013-08-13T00:00:00-04:00","iso_date":"2013-08-13T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"257331":{"id":"257331","type":"image","title":"Wafer bonding solution to epitaxial graphene \u2013 silicon integration Figure 1","body":null,"created":"1449243856","gmt_created":"2015-12-04 15:44:16","changed":"1475894938","gmt_changed":"2016-10-08 02:48:58","alt":"Wafer bonding solution to epitaxial graphene \u2013 silicon integration Figure 1","file":{"fid":"198250","name":"article3.jpg","image_path":"\/sites\/default\/files\/images\/article3_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/article3_0.jpg","mime":"image\/jpeg","size":114707,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/article3_0.jpg?itok=4np3S_ST"}}},"media_ids":["257331"],"related_links":[{"url":"http:\/\/arxiv.org\/abs\/1308.2697","title":"http:\/\/arxiv.org\/abs\/1308.2697"}],"groups":[{"id":"60783","name":"MRSEC"}],"categories":[{"id":"42931","name":"Performances"}],"keywords":[{"id":"9116","name":"epitaxial graphene"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}},"255461":{"#nid":"255461","#data":{"type":"news","title":"Exceptional ballistic transport in epitaxial graphene nanoribbons","body":[{"value":"\u003Cp\u003EAuthors:\u0026nbsp; \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Baringhaus_J\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EJens Baringhaus\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Ruan_M\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EMing Ruan\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Edler_F\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EFrederik Edler\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Tejeda_A\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EAntonio Tejeda\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Sicot_M\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EMuriel Sicot\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Ibrahimi_A\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EAmina Taleb Ibrahimi\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Jiang_Z\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EZhigang Jiang\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Conrad_E\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EEdward Conrad\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Berger_C\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EClaire Berger\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Tegenkamp_C\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EChristoph Tegenkamp\u003C\/a\u003E, \u003Ca href=\u0022http:\/\/arxiv.org\/find\/cond-mat\/1\/au:+Heer_W\/0\/1\/0\/all\/0\/1\u0022 rel=\u0022nofollow\u0022\u003EWalt A.de Heer\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003EGraphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons were thought to be semiconductors with these properties, however efforts to produce ribbons with useful bandgaps and high mobility has had limited success. We show here that high quality epitaxial graphene nanoribbons 40 nm in width, with annealed edges, grown on sidewall SiC are not semiconductors, but single channel room temperature ballistic conductors for lengths up to at least 16 micrometers. Mobilities exceeding one million corresponding to a sheet resistance below 1 Ohm have been observed, thereby surpassing two dimensional graphene by 3 orders of magnitude and theoretical predictions for perfect graphene by more than a factor of 10. The graphene ribbons behave as electronic waveguides or quantum dots. We show that transport in these ribbons is dominated by two components of the ground state transverse waveguide mode, one that is ballistic and temperature independent, and a second thermally activated component that appears to be ballistic at room temperature and insulating at cryogenic temperatures. At room temperature the resistance of both components abruptly increases with increasing length, one at a length of 160 nm and the other at 16 micrometers. These properties appear to be related to the lowest energy quantum states in the charge neutral ribbons. Since epitaxial graphene nanoribbons are readily produced by the thousands, their room temperature ballistic transport properties can be used in advanced nanoelectronics as well.\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EGraphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons were thought to be semiconductors with these properties, however efforts to produce ribbons with useful bandgaps and high mobility has had limited success. We show here that high quality epitaxial graphene nanoribbons 40 nm in width, with annealed edges, grown on sidewall SiC are not semiconductors, but single channel room temperature ballistic conductors for lengths up to at least 16 micrometers.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"We show here that high quality epitaxial graphene nanoribbons 40 nm in width, with annealed edges, grown on sidewall SiC are not semiconductors, but single channel room temperature ballistic conductors for lengths up to at least 16 micrometers."}],"uid":"27428","created_gmt":"2013-11-15 16:46:09","changed_gmt":"2016-10-08 03:15:22","author":"Gina Adams","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2013-08-26T00:00:00-04:00","iso_date":"2013-08-26T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"257311":{"id":"257311","type":"image","title":"A. Surface characterization: ARPES and STM","body":null,"created":"1449243856","gmt_created":"2015-12-04 15:44:16","changed":"1475894938","gmt_changed":"2016-10-08 02:48:58","alt":"A. Surface characterization: ARPES and STM","file":{"fid":"198249","name":"article2.jpg","image_path":"\/sites\/default\/files\/images\/article2_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/article2_0.jpg","mime":"image\/jpeg","size":91374,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/article2_0.jpg?itok=LnULdTLX"}}},"media_ids":["257311"],"related_links":[{"url":"http:\/\/arxiv.org\/abs\/1301.5354","title":"http:\/\/arxiv.org\/abs\/1301.5354"}],"groups":[{"id":"60783","name":"MRSEC"}],"categories":[{"id":"42941","name":"Art Research"}],"keywords":[{"id":"9116","name":"epitaxial graphene"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}},"171751":{"#nid":"171751","#data":{"type":"news","title":"Fabrication on Patterned Silicon Carbide Produces Bandgap for Graphene-Based Electronics","body":[{"value":"\u003Cp\u003EBy fabricating graphene structures atop nanometer-scale \u201csteps\u201d etched into silicon carbide, researchers have for the first time created a substantial electronic bandgap in the material suitable for room-temperature electronics. Use of nanoscale topography to control the properties of graphene could facilitate fabrication of transistors and other devices, potentially opening the door for developing all-carbon integrated circuits.\u003C\/p\u003E\u003Cp\u003EResearchers have measured a bandgap of approximately 0.5 electron-volts in 1.4-nanometer bent sections of graphene nanoribbons. The development could provide new direction to the field of graphene electronics, which has struggled with the challenge of creating bandgap necessary for operation of electronic devices.\u003C\/p\u003E\u003Cp\u003E\u201cThis is a new way of thinking about how to make high-speed graphene electronics,\u201d said Edward Conrad, a professor in the School of Physics at the Georgia Institute of Technology. \u201cWe can now look seriously at making fast transistors from graphene. And because our process is scalable, if we can make one transistor, we can potentially make millions of them.\u201d\u003C\/p\u003E\u003Cp\u003EThe findings were reported November 18 in the journal \u003Cem\u003ENature Physics\u003C\/em\u003E. The research, done at the Georgia Institute of Technology in Atlanta and at SOLEIL, the French national synchrotron facility, has been supported by the National Science Foundation Materials Research Science and Engineering Center (MRSEC) at Georgia Tech, the W.M. Keck Foundation and the Partner University Fund from the Embassy of France.\u003C\/p\u003E\u003Cp\u003EResearchers don\u2019t yet understand why graphene nanoribbons become semiconducting as they bend to enter tiny steps \u2013 about 20 nanometers deep \u2013 that are cut into the silicon carbide wafers. But the researchers believe that strain induced as the carbon lattice bends, along with the confinement of electrons, may be factors creating the bandgap. The nanoribbons are composed of two layers of graphene.\u003C\/p\u003E\u003Cp\u003EProduction of the semiconducting graphene structures begins with the use of e-beams to cut \u201ctrenches\u201d into silicon carbide wafers, which are normally polished to create a flat surface for the growth of epitaxial graphene. Using a high-temperature furnace, tens of thousands of graphene ribbons are then grown across the steps, using photolithography.\u003C\/p\u003E\u003Cp\u003EDuring the growth, the sharp edges of trenches become smoother as the material attempts to regain its flat surface. The growth time must therefore be carefully controlled to prevent the narrow silicon carbide features from melting too much.\u003C\/p\u003E\u003Cp\u003EThe graphene fabrication also must be controlled along a specific direction so that the carbon atom lattice grows into the steps along the material\u2019s \u201carmchair\u201d direction. \u201cIt\u2019s like trying to bend a length of chain-link fence,\u201d Conrad explained. \u201cIt only wants to bend one way.\u201d\u003C\/p\u003E\u003Cp\u003EThe new technique permits not only the creation of a bandgap in the material, but potentially also the fabrication of entire integrated circuits from graphene without the need for interfaces that introduce resistance. On either side of the semiconducting section of the graphene, the nanoribbons retain their metallic properties.\u003C\/p\u003E\u003Cp\u003E\u201cWe can make thousands of these trenches, and we can make them anywhere we want on the wafer,\u201d said Conrad. \u201cThis is more than just semiconducting graphene. The material at the bends is semiconducting, and it\u2019s attached to graphene continuously on both sides. It\u2019s basically a Shottky barrier junction.\u201d\u003C\/p\u003E\u003Cp\u003EBy growing the graphene down one edge of the trench and then up the other side, the researchers could in theory produce two connected Shottky barriers \u2013 a fundamental component of semiconductor devices. Conrad and his colleagues are now working to fabricate transistors based on their discovery.\u003C\/p\u003E\u003Cp\u003EConfirmation of the bandgap came from angle-resolved photoemission spectroscopy measurements made at the Synchrotron CNRS in France. There, the researchers fired powerful photon beams into arrays of the graphene nanoribbons and measured the electrons emitted.\u003C\/p\u003E\u003Cp\u003E\u201cYou can measure the energy of the electrons that come out, and you can measure the direction from which they come out,\u201d said Conrad. \u201cFrom that information, you can work backward to get information about the electronic structure of the nanoribbons.\u201d\u003C\/p\u003E\u003Cp\u003ETheorists had predicted that bending graphene would create a bandgap in the material. But the bandgap measured by the research team was larger than what had been predicted.\u003C\/p\u003E\u003Cp\u003EBeyond building transistors and other devices, in future work the researchers will attempt to learn more about what creates the bandgap \u2013 and how to control it. The property may be controlled by the angle of the bend in the graphene nanoribbon, which can be controlled by altering the depth of the step.\u003C\/p\u003E\u003Cp\u003E\u201cIf you try to lay a carpet over a small imperfection in the floor, the carpet will go over it and you may not even know the imperfection is there,\u201d Conrad explained. \u201cBut if you go over a step, you can tell. There are probably a range of heights in which we can affect the bend.\u201d\u003C\/p\u003E\u003Cp\u003EHe predicts that the discovery will create new activity as other graphene researchers attempt to utilize the results.\u003C\/p\u003E\u003Cp\u003E\u201cIf you can demonstrate a fast device, a lot of people will be interested in this,\u201d Conrad said. \u201cIf this works on a large scale, it could launch a niche market for high-speed, high-powered electronic devices.\u201d\u003C\/p\u003E\u003Cp\u003EIn addition to Conrad, the research team included J. Hicks, M.S. Nevius, F. Wang, K. Shepperd, J. Palmer, J. Kunc, W.A. De Heer and C. Berger, all from Georgia Tech; A. Tejeda from the Institut Jean Lamour, CNES \u2013 Univ. de Nancy and the Synchrotron SOLEIL; A. Taleb-Ibrahimi from the CNRS\/Synchrotron SOLEIL, and F. Bertran and P. Le Fevre from Synchrotron SOLEIL.\u003C\/p\u003E\u003Cp\u003E\u003Cem\u003EThis research was supported by the National Science Foundation Materials Research Science and Engineering Center (MRSEC) at Georgia Tech under Grants DMR-0820382 and DMR-1005880, the W.M. Keck Foundation, and the Partner University Fund from the Embassy of France. The content of the article is the responsibility of the authors and does not necessarily represent the views of the National Science Foundation.\u003C\/em\u003E\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003ECITATION\u003C\/strong\u003E: Hicks, J., A wide-bandgap metal-semiconductor-metal nanostructure made entirely from graphene, Nature Physics (2012). \u003Ca href=\u0022http:\/\/dx.doi.org\/10.1038\/NPHYS2487\u0022 title=\u0022http:\/\/dx.doi.org\/10.1038\/NPHYS2487\u0022\u003Ehttp:\/\/dx.doi.org\/10.1038\/NPHYS2487\u003C\/a\u003E.\u003Cbr \/\u003E\u003Cbr \/\u003E\u003Cstrong\u003EResearch News \u0026amp; Publications Office\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cstrong\u003EGeorgia Institute of Technology\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cstrong\u003E177 North Avenue\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cstrong\u003EAtlanta, Georgia\u0026nbsp; 30332-0181\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cbr \/\u003E\u003Cstrong\u003EMedia Relations Contact\u003C\/strong\u003E: John Toon (404-894-6986)(\u003Ca href=\u0022mailto:jtoon@gatech.edu\u0022\u003Ejtoon@gatech.edu\u003C\/a\u003E)\u003Cbr \/\u003E\u003Cstrong\u003EWriter\u003C\/strong\u003E: John Toon\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EBy fabricating graphene structures atop nanometer-scale \u201csteps\u201d etched into silicon carbide, researchers have for the first time created a substantial electronic bandgap in the material suitable for room-temperature electronics. Use of nanoscale topography to control the properties of graphene could facilitate fabrication of transistors and other devices, potentially opening the door for developing all-carbon integrated circuits.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"Researchers have created a substantial electronic bandgap in graphene suitable for room-temperature electronics."}],"uid":"27303","created_gmt":"2012-11-16 18:31:03","changed_gmt":"2016-10-08 03:13:14","author":"John Toon","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2012-11-18T00:00:00-05:00","iso_date":"2012-11-18T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"171721":{"id":"171721","type":"image","title":"Graphene bandgap","body":null,"created":"1449178999","gmt_created":"2015-12-03 21:43:19","changed":"1475894811","gmt_changed":"2016-10-08 02:46:51","alt":"Graphene bandgap","file":{"fid":"195736","name":"graphene-bandgap.jpg","image_path":"\/sites\/default\/files\/images\/graphene-bandgap_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/graphene-bandgap_0.jpg","mime":"image\/jpeg","size":178253,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/graphene-bandgap_0.jpg?itok=xxsj8w34"}},"171731":{"id":"171731","type":"image","title":"Graphene bandgap2","body":null,"created":"1449178999","gmt_created":"2015-12-03 21:43:19","changed":"1475894811","gmt_changed":"2016-10-08 02:46:51","alt":"Graphene bandgap2","file":{"fid":"195737","name":"graphene-bandgap2.jpg","image_path":"\/sites\/default\/files\/images\/graphene-bandgap2_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/graphene-bandgap2_0.jpg","mime":"image\/jpeg","size":205398,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/graphene-bandgap2_0.jpg?itok=z6QTpK_1"}},"171741":{"id":"171741","type":"image","title":"Graphene bandgap3","body":null,"created":"1449178999","gmt_created":"2015-12-03 21:43:19","changed":"1475894811","gmt_changed":"2016-10-08 02:46:51","alt":"Graphene bandgap3","file":{"fid":"195738","name":"graphene-bandgap3.jpg","image_path":"\/sites\/default\/files\/images\/graphene-bandgap3_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/graphene-bandgap3_0.jpg","mime":"image\/jpeg","size":144655,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/graphene-bandgap3_0.jpg?itok=voS-G2G3"}}},"media_ids":["171721","171731","171741"],"groups":[{"id":"1188","name":"Research Horizons"}],"categories":[{"id":"150","name":"Physics and Physical Sciences"}],"keywords":[{"id":"50751","name":"bandgap"},{"id":"50761","name":"Ed Conrad"},{"id":"9116","name":"epitaxial graphene"},{"id":"429","name":"graphene"},{"id":"432","name":"nanoribbon"},{"id":"166937","name":"School of Physics"},{"id":"169534","name":"silicon carbide"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EJohn Toon\u003C\/p\u003E\u003Cp\u003EResearch News \u0026amp; Publications Office\u003C\/p\u003E\u003Cp\u003E(404) 894-6986\u003C\/p\u003E\u003Cp\u003E\u003Ca href=\u0022mailto:jtoon@gatech.edu\u0022\u003Ejtoon@gatech.edu\u003C\/a\u003E\u003C\/p\u003E","format":"limited_html"}],"email":["jtoon@gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"132171":{"#nid":"132171","#data":{"type":"news","title":"Study Shows Availability of Hydrogen Controls Chemical Structure of Graphene Oxide","body":[{"value":"\u003Cp\u003EA new study shows that the availability of hydrogen plays a significant role in determining the chemical and structural makeup of graphene oxide, a material that has potential uses in nano-electronics, nano-electromechanical systems, sensing, composites, optics, catalysis and energy storage.\u003C\/p\u003E\u003Cp\u003EThe study also found that after the material is produced, its structural and chemical properties continue to evolve for more than a month as a result of continuing chemical reactions with hydrogen.\u003C\/p\u003E\u003Cp\u003EUnderstanding the properties of graphene oxide \u2013 and how to control them \u2013 is important to realizing potential applications for the material. To make it useful for nano-electronics, for instance, researchers must induce both an electronic band gap and structural order in the material. Controlling the amount of hydrogen in graphene oxide may be the key to manipulating the material properties.\u003C\/p\u003E\u003Cp\u003E\u201cGraphene oxide is a very interesting material because its mechanical, optical and electronic properties can be controlled using thermal or chemical treatments to alter its structure,\u201d said Elisa Riedo, an associate professor in the School of Physics at the Georgia Institute of Technology. \u201cBut before we can get the properties we want, we need to understand the factors that control the material\u2019s structure. This study provides information about the role of hydrogen in the reduction of graphene oxide at room temperature.\u201d\u003C\/p\u003E\u003Cp\u003EThe research, which studied graphene oxide produced from epitaxial graphene, was reported on May 6 in the journal Nature Materials. The research was sponsored by the National Science Foundation, the Materials Research Science and Engineering Center (MRSEC) at Georgia Tech, and by the U.S. Department of Energy.\u003C\/p\u003E\u003Cp\u003EGraphene oxide is formed through the use of chemical and thermal processes that mainly add two oxygen-containing functional groups to the lattice of carbon atoms that make up graphene: epoxide and hydroxyl species. The Georgia Tech researchers began their studies with multilayer expitaxial graphene grown atop a silicon carbide wafer, a technique pioneered by Walt de Heer and his research group at Georgia Tech. Their samples included an average of ten layers of graphene.\u003C\/p\u003E\u003Cp\u003EAfter oxidizing the thin films of graphene using the established Hummers method, the researchers examined their samples using X-ray photo-emission spectroscopy (XPS). Over about 35 days, they noticed the number of epoxide functional groups declining while the number of hydroxyl groups increased slightly. After about three months, the ratio of the two groups finally reached equilibrium.\u003C\/p\u003E\u003Cp\u003E\u201cWe found that the material changed by itself at room temperature without any external stimulation,\u201d said Suenne Kim, a postdoctoral fellow in Riedo\u2019s laboratory. \u201cThe degree to which it was unstable at room temperature was surprising.\u201d\u003C\/p\u003E\u003Cp\u003ECurious about what might be causing the changes, Riedo and Kim took their measurements to Angelo Bongiorno, an assistant professor who studies computational materials chemistry in Georgia Tech\u2019s School of Chemistry and Biochemistry. Bongiorno and graduate student Si Zhou studied the changes using density functional theory, which suggested that hydrogen could be combining with oxygen in the functional groups to form water. That would favor a reduction in the epoxide groups, which is what Riedo and Kim were seeing experimentally.\u003C\/p\u003E\u003Cp\u003E\u201cElisa\u2019s group was doing experimental measurements, while we were doing theoretical calculations,\u201d Bongiorno said. \u201cWe combined our information to come up with the idea that maybe there was hydrogen involved.\u201d\u003C\/p\u003E\u003Cp\u003EThe suspicions were confirmed experimentally, both by the Georgia Tech group and by a research team at the University of Texas at Dallas. This information about the role of hydrogen in determining the structure of graphene oxide suggests a new way to control its properties, Bongiorno noted.\u003C\/p\u003E\u003Cp\u003E\u201cDuring synthesis of the material, we could potentially use this as a tool to change the structure,\u201d he said. \u201cBy understanding how to use hydrogen, we could add it or take it out, allowing us to adjust the relative distribution and concentration of the epoxide and hydroxyl species which control the properties of the material.\u201d\u003C\/p\u003E\u003Cp\u003ERiedo and Bongiorno acknowledge that their material \u2013 based on epitaxial graphene \u2013 may be different from the oxide produced from exfoliated graphene. Producing graphene oxide from flakes of the material involves additional processing, including dissolving in an aqueous solution and then filtering and depositing the material onto a substrate. But they believe hydrogen plays a similar role in determining the properties of exfoliated graphene oxide.\u003C\/p\u003E\u003Cp\u003E\u201cWe probably have a new new form of graphene oxide, one that may be more useful commercially, although the same processes should also be happening within the other form of graphene oxide,\u201d said Bongiorno.\u003C\/p\u003E\u003Cp\u003EThe next steps are to understand how to control the amount of hydrogen in epitaxial graphene oxide, and what conditions may be necessary to affect reactions with the two functional groups. Ultimately, that may provide a way to open an electronic band gap and simultaneously obtain a graphene-based material with electron transport characteristics comparable to those of pristine graphene.\u003C\/p\u003E\u003Cp\u003E\u201cBy controlling the properties of graphene oxide through this chemical and thermal reduction, we may arrive at a material that remains close enough to graphene in structure to maintain the order necessary for the excellent electronic properties, while having the band gap needed to create transistors,\u201d Riedo said. \u201cIt could be that graphene oxide is the way to arrive at that type of material.\u201d\u003C\/p\u003E\u003Cp\u003EBeyond those already mentioned, the paper\u2019s authors included Yike Hu, Claire Berger and Walt de Heer from the School of Physics at Georgia Tech, and Muge Acik and Yves Chabal from the Department of Materials Science and Engineering at the University of Texas at Dallas.\u003Cbr \/\u003E\u003Cbr \/\u003E\u003Cem\u003EThis research was supported by the National Science Foundation under grants CMMI-1100290, DMR-0820382 and DMR-0706031, and by the U.S. Department of Energy\u2019s Office of Basic Energy Sciences under grants DE-FG02-06ER46293 and DE-SC001951. The content is solely the responsibility of the principal investigators and does not necessarily represent the official views of the National Science Foundation or the Department of Energy.\u003C\/em\u003E\u003Cbr \/\u003E\u003Cbr \/\u003E\u003Cstrong\u003EResearch News \u0026amp; Publications Office\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cstrong\u003EGeorgia Institute of Technology\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cstrong\u003E75 Fifth Street, N.W., Suite 314\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cstrong\u003EAtlanta, Georgia\u0026nbsp; 30308\u0026nbsp; USA\u003C\/strong\u003E\u003Cbr \/\u003E\u003Cbr \/\u003E\u003Cstrong\u003EMedia Relations Contacts\u003C\/strong\u003E: John Toon (404-894-6986)(\u003Ca href=\u0022mailto:jtoon@gatech.edu\u0022\u003Ejtoon@gatech.edu\u003C\/a\u003E) or Abby Robinson (404-385-3364)(\u003Ca href=\u0022mailto:abby@innovate.gatech.edu\u0022\u003Eabby@innovate.gatech.edu\u003C\/a\u003E)\u003Cbr \/\u003E\u003Cstrong\u003EWriter\u003C\/strong\u003E: John Toon\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":[{"value":"Metastable material continues to evolve for three months after fabrication"}],"field_summary":[{"value":"\u003Cp\u003EA new study shows that the availability of hydrogen plays a significant role in determining the chemical and structural makeup of graphene oxide, a material that has potential uses in nano-electronics, nano-electromechanical systems, sensing, composites, optics, catalysis and energy storage.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"Researchers have found that the availability of hydrogen controls the structure of graphene oxide."}],"uid":"27303","created_gmt":"2012-05-22 16:01:43","changed_gmt":"2016-10-08 03:12:18","author":"John Toon","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2012-05-22T00:00:00-04:00","iso_date":"2012-05-22T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"132081":{"id":"132081","type":"image","title":"Studying Graphene Oxide","body":null,"created":"1449178659","gmt_created":"2015-12-03 21:37:39","changed":"1475894759","gmt_changed":"2016-10-08 02:45:59","alt":"Studying Graphene Oxide","file":{"fid":"194701","name":"graphene-hydrogen119.jpg","image_path":"\/sites\/default\/files\/images\/graphene-hydrogen119_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/graphene-hydrogen119_0.jpg","mime":"image\/jpeg","size":1513223,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/graphene-hydrogen119_0.jpg?itok=hAtjBgvB"}},"132091":{"id":"132091","type":"image","title":"Studying Graphene Oxide2","body":null,"created":"1449178659","gmt_created":"2015-12-03 21:37:39","changed":"1475894759","gmt_changed":"2016-10-08 02:45:59","alt":"Studying Graphene Oxide2","file":{"fid":"194702","name":"graphene-hydrogen62.jpg","image_path":"\/sites\/default\/files\/images\/graphene-hydrogen62_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/graphene-hydrogen62_0.jpg","mime":"image\/jpeg","size":1537759,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/graphene-hydrogen62_0.jpg?itok=-FD3IilH"}},"132101":{"id":"132101","type":"image","title":"Graphene Oxide Sample","body":null,"created":"1449178659","gmt_created":"2015-12-03 21:37:39","changed":"1475894759","gmt_changed":"2016-10-08 02:45:59","alt":"Graphene Oxide Sample","file":{"fid":"194703","name":"graphene-hydrogen95.jpg","image_path":"\/sites\/default\/files\/images\/graphene-hydrogen95_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/graphene-hydrogen95_0.jpg","mime":"image\/jpeg","size":556983,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/graphene-hydrogen95_0.jpg?itok=yvlPkqHw"}}},"media_ids":["132081","132091","132101"],"groups":[{"id":"1188","name":"Research Horizons"}],"categories":[{"id":"141","name":"Chemistry and Chemical Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"150","name":"Physics and Physical Sciences"}],"keywords":[{"id":"9116","name":"epitaxial graphene"},{"id":"429","name":"graphene"},{"id":"34221","name":"graphene oxide"},{"id":"7435","name":"material"},{"id":"34271","name":"mestastable"},{"id":"166928","name":"School of Chemistry and Biochemistry"},{"id":"166937","name":"School of Physics"}],"core_research_areas":[{"id":"39451","name":"Electronics and Nanotechnology"},{"id":"39471","name":"Materials"}],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EJohn Toon\u003C\/p\u003E\u003Cp\u003EResearch News \u0026amp; Publications Office\u003C\/p\u003E\u003Cp\u003E(404) 894-6986\u003C\/p\u003E\u003Cp\u003E\u003Ca href=\u0022mailto:jtoon@gatech.edu\u0022\u003Ejtoon@gatech.edu\u003C\/a\u003E\u003C\/p\u003E","format":"limited_html"}],"email":["jtoon@gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"65044":{"#nid":"65044","#data":{"type":"news","title":"Technique Produces Graphene Nanoribbons with Metallic Properties","body":[{"value":"\u003Cp\u003EA new \u0022templated growth\u0022 technique for fabricating nanoribbons of epitaxial graphene has produced structures just 15 to 40 nanometers wide that conduct current with almost no resistance.  These structures could address the challenge of connecting graphene devices made with conventional architectures -- and set the stage for a new generation of devices that take advantage of the quantum properties of electrons.\u003C\/p\u003E\n\u003Cp\u003E\u0022We can now make very narrow, conductive nanoribbons that have quantum ballistic properties,\u0022 said Walt de Heer, a professor in the School of Physics at the Georgia Institute of Technology.  \u0022These narrow ribbons become almost like a perfect metal.  Electrons can move through them without scattering, just like they do in carbon nanotubes.\u0022\n\u003C\/p\u003E\n\u003Cp\u003EDe Heer discussed recent results of this graphene growth process March 21st at the American Physical Society\u2019s March 2011 Meeting in Dallas.  The research was sponsored by the National Science Foundation-supported Materials Research Science and Engineering Center (MRSEC).\n\u003C\/p\u003E\n\u003Cp\u003EFirst reported Oct. 3 in the advance online edition of the journal \u003Cem\u003ENature Nanotechnology\u003C\/em\u003E, the new fabrication technique allows production of epitaxial graphene structures with smooth edges.  Earlier fabrication techniques that used electron beams to cut graphene sheets produced nanoribbon structures with rough edges that scattered electrons, causing interference.  The resulting nanoribbons had properties more like insulators than conductors.\n\u003C\/p\u003E\n\u003Cp\u003E\u0022In our templated growth approach, we have essentially eliminated the edges that take away from the desirable properties of graphene,\u0022 de Heer explained.  \u0022The edges of the epitaxial graphene merge into the silicon carbide, producing properties that are really quite interesting.\u0022\n\u003C\/p\u003E\n\u003Cp\u003EThe templated growth technique begins with etching patterns into the silicon carbide surfaces on which epitaxial graphene is grown.  The patterns serve as templates directing the growth of graphene structures, allowing the formation of nanoribbons and other structures of specific widths and shapes without the use of cutting techniques that produce the rough edges.\n\u003C\/p\u003E\n\u003Cp\u003EIn creating these graphene nanostructures, de Heer and his research team first use conventional microelectronics techniques to etch tiny \u0022steps\u0022  -- or contours -- into a silicon carbide wafer whose surface has been made extremely flat.  They then heat the contoured wafer to approximately 1,500 degrees Celsius, which initiates melting that polishes any rough edges left by the etching process.\n\u003C\/p\u003E\n\u003Cp\u003EEstablished techniques are then used for growing graphene from silicon carbide by driving the silicon atoms from the surface.  Instead of producing a consistent layer of graphene across the entire surface of the wafer, however, the researchers limit the heating time so that graphene grows only on portions of the contours.\n\u003C\/p\u003E\n\u003Cp\u003EThe width of the resulting nanoribbons is proportional to the depth of the contours, providing a mechanism for precisely controlling the nanoribbon structures.  To form complex structures, multiple etching steps can be carried out to create complex templates.\n\u003C\/p\u003E\n\u003Cp\u003E\u0022This technique allows us to avoid the complicated e-beam lithography steps that people have been using to create structures in epitaxial graphene,\u0022 de Heer noted.  \u0022We are seeing very good properties that show these structures can be used for real electronic applications.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003ESince publication of the \u003Cem\u003ENature Nanotechnology\u003C\/em\u003E paper, de Heer\u0027s team has been refining its technique.  \u0022We have taken this to an extreme -- the cleanest and narrowest ribbons we can make,\u0022 he said.  \u0022We expect to be able to do everything we need with the size ribbons that we are able to make right now, though we probably could reduce the width to 10 nanometers or less.\u0022\n\u003C\/p\u003E\n\u003Cp\u003EWhile the Georgia Tech team is continuing to develop high-frequency transistors -- perhaps even at the terahertz range -- its primary effort now focuses on developing quantum devices, de Heer said.  Such devices were envisioned in the patents Georgia Tech holds on various epitaxial graphene processes.\n\u003C\/p\u003E\n\u003Cp\u003E\u0022This means that the way we will be doing graphene electronics will be different,\u0022 he explained.  \u0022We will not be following the model of using standard field-effect transistors (FETs), but will pursue devices that use ballistic conductors and quantum interference. We are headed straight into using the electron wave effects in graphene.\u0022\n\u003C\/p\u003E\n\u003Cp\u003ETaking advantage of the wave properties will allow electrons to be manipulated with techniques similar to those used by optical engineers.  For instance, switching may be carried out using interference effects -- separating beams of electrons and then recombining them in opposite phases to extinguish the signals.\n\u003C\/p\u003E\n\u003Cp\u003EQuantum devices would be smaller than conventional transistors and operate at lower power.  Because of its ability to transport electrons with virtually no resistance, epitaxial graphene may be the ideal material for such devices, de Heer said.\n\u003C\/p\u003E\n\u003Cp\u003E\u0022Using the quantum properties of electrons rather than the standard charged-particle properties means opening up new ways of looking at electronics,\u0022 he predicted.  \u0022This is probably the way that electronics will evolve, and it appears that graphene is the ideal material for making this transition.\u0022\n\u003C\/p\u003E\n\u003Cp\u003EDe Heer\u0027s research team hopes to demonstrate a rudimentary switch operating on the quantum interference principle within a year.  \n\u003C\/p\u003E\n\u003Cp\u003EEpitaxial graphene may be the basis for a new generation of high-performance devices that will take advantage of the material\u0027s unique properties in applications where higher costs can be justified.  Silicon, today\u0027s electronic material of choice, will continue to be used in applications where high-performance is not required, de Heer said.\n\u003C\/p\u003E\n\u003Cp\u003E\u0022This is an important step in the process,\u0022 he added.  \u0022There are going to be a lot of surprises as we move into these quantum devices and find out how they work.  We have good reason to believe that this can be the basis for a new generation of transistors based on quantum interference.\u0022\n\u003C\/p\u003E\n\u003Cp\u003E\u003Cstrong\u003EResearch News \u0026amp; Publications Office\u003Cbr \/\u003E\nGeorgia Institute of Technology\u003Cbr \/\u003E\n75 Fifth Street, N.W., Suite 314\u003Cbr \/\u003E\nAtlanta, Georgia 30308 USA\n\u003C\/strong\u003E\u003C\/p\u003E\n\u003Cp\u003E\u003Cstrong\u003EMedia Relations Contacts\u003C\/strong\u003E: John Toon (404-894-6986)(\u003Ca href=\u0022mailto:jtoon@gatech.edu\u0022\u003Ejtoon@gatech.edu\u003C\/a\u003E) or Abby Robinson (404-385-3364)(\u003Ca href=\u0022mailto:abby@innovate.gatech.edu\u0022\u003Eabby@innovate.gatech.edu\u003C\/a\u003E).\n\u003C\/p\u003E\n\u003Cp\u003E\u003Cstrong\u003EWriter\u003C\/strong\u003E: John Toon\n\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EA new \u0022templated growth\u0022 technique for fabricating nanoribbons of epitaxial graphene has produced structures just 15 to 40 nanometers wide that conduct current with almost no resistance.  These structures could address the challenge of connecting graphene devices.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"Researchers have made graphene nanoribbons with metallic properties."}],"uid":"27303","created_gmt":"2011-03-21 00:00:00","changed_gmt":"2016-10-08 03:08:26","author":"John Toon","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2011-03-21T00:00:00-04:00","iso_date":"2011-03-21T00:00:00-04:00","tz":"America\/New_York"},"extras":[],"hg_media":{"65045":{"id":"65045","type":"image","title":"Growing epitaxial graphene","body":null,"created":"1449176783","gmt_created":"2015-12-03 21:06:23","changed":"1475894574","gmt_changed":"2016-10-08 02:42:54","alt":"Growing epitaxial graphene","file":{"fid":"192147","name":"tis35461.jpg","image_path":"\/sites\/default\/files\/images\/tis35461_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/tis35461_0.jpg","mime":"image\/jpeg","size":1731501,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/tis35461_0.jpg?itok=Q2grkYwo"}},"65046":{"id":"65046","type":"image","title":"Prof. Walt de Heer","body":null,"created":"1449176783","gmt_created":"2015-12-03 21:06:23","changed":"1475894574","gmt_changed":"2016-10-08 02:42:54","alt":"Prof. Walt de Heer","file":{"fid":"192148","name":"toh35777.jpg","image_path":"\/sites\/default\/files\/images\/toh35777_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/toh35777_0.jpg","mime":"image\/jpeg","size":1603740,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/toh35777_0.jpg?itok=GCENVzgL"}},"65047":{"id":"65047","type":"image","title":"Growing expitaxial graphene","body":null,"created":"1449176783","gmt_created":"2015-12-03 21:06:23","changed":"1475894574","gmt_changed":"2016-10-08 02:42:54","alt":"Growing expitaxial graphene","file":{"fid":"192149","name":"tfu35461.jpg","image_path":"\/sites\/default\/files\/images\/tfu35461_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/tfu35461_0.jpg","mime":"image\/jpeg","size":65166,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/tfu35461_0.jpg?itok=4hcNTgqa"}}},"media_ids":["65045","65046","65047"],"related_links":[{"url":"http:\/\/www.physics.gatech.edu\/","title":"Georgia Tech School of Physics"},{"url":"http:\/\/www.mrsec.gatech.edu\/","title":"Materials Research Science and Engineering Center"},{"url":"https:\/\/www.physics.gatech.edu\/user\/walter-de-heer","title":"Walt de Heer"}],"groups":[{"id":"1188","name":"Research Horizons"}],"categories":[{"id":"141","name":"Chemistry and Chemical Engineering"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"135","name":"Research"},{"id":"150","name":"Physics and Physical Sciences"}],"keywords":[{"id":"10890","name":"conductor"},{"id":"9116","name":"epitaxial graphene"},{"id":"429","name":"graphene"},{"id":"12423","name":"nanoribbons"},{"id":"4827","name":"resistance"},{"id":"12422","name":"Walt de Heer"}],"core_research_areas":[],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003E\u003Cstrong\u003EJohn Toon\u003C\/strong\u003E\u003Cbr \/\u003EResearch News \u0026amp; Publications Office\u003Cbr \/\u003E\u003Ca href=\u0022http:\/\/www.gatech.edu\/contact\/index.html?id=jt7\u0022\u003EContact John Toon\u003C\/a\u003E\u003Cbr \/\u003E\u003Cstrong\u003E404-894-6986\u003C\/strong\u003E\u003C\/p\u003E","format":"limited_html"}],"email":["jtoon@gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"63409":{"#nid":"63409","#data":{"type":"news","title":"Expitaxial Graphene Shows Promise for Replacing Silicon in Electronics","body":[{"value":"\u003Cp\u003EMove over silicon.  There\u0027s a new electronic material in town, and it goes fast.\n\u003C\/p\u003E\n\u003Cp\u003EThat material, the focus of the 2010 Nobel Prize in physics, is graphene -- a fancy name for extremely thin layers of ordinary carbon atoms arranged in a \u0022chicken-wire\u0022 lattice. These layers, sometimes just a single atom thick, conduct electricity with virtually no resistance, very little heat generation -- and less power consumption than silicon.\n\u003C\/p\u003E\n\u003Cp\u003EWith silicon device fabrication approaching its physical limits, many researchers believe graphene can provide a new platform material that would allow the semiconductor industry to continue its march toward ever-smaller and faster electronic devices -- progress described in Moore\u0027s Law. Though graphene will likely never replace silicon for everyday electronic applications, it could take over as the material of choice for high-performance devices. \n\u003C\/p\u003E\n\u003Cp\u003EAnd graphene could ultimately spawn a new generation of devices designed to take advantage of its unique properties. \n\u003C\/p\u003E\n\u003Cp\u003ESince 2001, Georgia Tech has become a world leader in developing epitaxial graphene, a specific type of graphene that can be grown on large wafers and patterned for use in electronics manufacturing. In a recent paper published in the journal \u003Cem\u003ENature Nanotechnology\u003C\/em\u003E, Georgia Tech researchers reported fabricating an array of 10,000 top-gated transistors on a 0.24 square centimeter chip, an achievement believed to be the highest density reported so far in graphene devices. \n\u003C\/p\u003E\n\u003Cp\u003EIn creating that array, they also demonstrated a clever new approach for growing complex graphene patterns on templates etched into silicon carbide. The new technique offered the solution to one of the most difficult issues that had been facing graphene electronics. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022This is a significant step toward electronics manufacturing with graphene,\u0022 said Walt de Heer, a professor in Georgia Tech\u0027s School of Physics who pioneered the development of graphene for high-performance electronics. \u0022This is another step showing that our method of working with epitaxial graphene grown on silicon carbide is the right approach and the one that will probably be used for making graphene electronics.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003E\u003Cstrong\u003EUnrolled Carbon Nanotubes\u003C\/strong\u003E \n\u003C\/p\u003E\n\u003Cp\u003EFor de Heer, the story of graphene begins with carbon nanotubes, tiny cylindrical structures considered miraculous when they first began to be studied by scientists in 1991. De Heer was among the researchers excited about the properties of nanotubes, whose unique arrangement of carbon atoms gave them physical and electronic properties that scientists believed could be the foundation for a new generation of electronic devices. \n\u003C\/p\u003E\n\u003Cp\u003ECarbon nanotubes still have attractive properties, but the ability to grow them consistently -- and to incorporate them in high-volume electronics applications -- has so far eluded researchers. De Heer realized before others that carbon nanotubes would probably never be used for high-volume electronic devices. \n\u003C\/p\u003E\n\u003Cp\u003EBut he also realized that the key to the attractive electronic properties of the nanotubes was the lattice created by the carbon atoms. Why not simply grow that lattice on a flat surface, and use fabrication techniques proven in the microelectronics industry to create devices in much the same way as silicon integrated circuits? \n\u003C\/p\u003E\n\u003Cp\u003EBy heating silicon carbide -- a widely-used electronic material -- de Heer and his colleagues were able to drive silicon atoms from the surface, leaving just the carbon lattice in thin layers of graphene large enough to grow the kinds of electronic devices familiar to a generation of electronics designers.\n\u003C\/p\u003E\n\u003Cp\u003EThat process was the basis for a patent filed in 2003, and for initial research support from chip-maker Intel. Since then, de Heer\u0027s group has published dozens of papers and helped spawn other research groups also using epitaxial graphene for electronic devices. Though scientists are still learning about the material, companies such as IBM have launched research programs based on epitaxial graphene, and agencies such as the National Science Foundation (NSF) and Defense Advanced Research Projects Agency (DARPA) have invested in developing the material for future electronics applications. \n\u003C\/p\u003E\n\u003Cp\u003EGeorgia Tech\u0027s work on developing epitaxial graphene for manufacturing electronic devices was recognized in the background paper produced by the Royal Swedish Academy of Sciences as part of the Nobel Prize documentation. \n\u003C\/p\u003E\n\u003Cp\u003EThe race to find commercial applications for graphene is intense, with researchers from the United States, Europe, Japan and Singapore engaged in well-funded efforts. Since awarding of the Nobel to a group from the United Kingdom, the flood of news releases about graphene developments has grown. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022Our epitaxial graphene is now used around the world by many research laboratories,\u0022 de Heer noted. \u0022We are probably at the stage where silicon was in the 1950s. This is the beginning of something that is going to be very large and important.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003E\u003Cstrong\u003ESilicon \u0022Running Out of Gas\u0022\u003C\/strong\u003E \n\u003C\/p\u003E\n\u003Cp\u003EA new electronics material is needed because silicon is running out of miniaturization room. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022Primarily, we\u0027ve gotten the speed increases from silicon by continually shrinking feature sizes and improving interconnect technology,\u0022 said Dennis Hess, director of the National Science Foundation-sponsored Materials Research Science and Engineering Center (MRSEC) established at Georgia Tech to study future electronic materials, starting with epitaxial graphene. \u0022We are at the point where in less than 10 years, we won\u0027t be able to shrink feature sizes any farther because of the physics of the device operation. That means we will either have to change the type of device we make, or change the electronic material we use.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003EIt\u0027s a matter of physics. At the very small size scales needed to create ever more dense device arrays, silicon generates too much resistance to electron flow, creating more heat than can be dissipated and consuming too much power. \n\u003C\/p\u003E\n\u003Cp\u003EGraphene has no such restrictions, and in fact, can provide electron mobility as much as 100 times better than silicon. De Heer believes his group has developed the roadmap for the future of high-performance electronics -- and that it is paved with epitaxial graphene. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022We have basically developed a whole scheme for making electronics out of graphene,\u0022 he said. \u0022We have set down what we believe will be the ground rules for how that will work, and we have the key patents in place.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003ESilicon, of course, has matured over many generations through constant research and improvement. De Heer and Hess agree that silicon will always be around, useful for low-cost consumer products such as iPods, toasters, personal computers and the like. \n\u003C\/p\u003E\n\u003Cp\u003EDe Heer expects graphene to find its niche doing things that couldn\u0027t otherwise be done. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022We\u0027re not trying to do something cheaper or better; we\u0027re going to do things that can\u0027t be done at all with silicon,\u0022 he said. \u0022Making electronic devices as small as a molecule, for instance, cannot be done with silicon, but in principle could be done with graphene. The key question is how to extend Moore\u0027s Law in a post-CMOS world.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003EUnlike the carbon nanotubes he studied in the 1990s, de Heer sees no major problems ahead for the development of epitaxial graphene. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022That graphene is going to be a major player in the electronics of the future is no longer in doubt,\u0022 he said. \u0022We don\u0027t see any real roadblocks ahead. There are no flashing red lights or other signs that seem to say that this won\u0027t work. All of the issues we see relate to improving technical issues, and we know how to do that.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003E\u003Cstrong\u003EMaking the Best Graphene\u003C\/strong\u003E \n\u003C\/p\u003E\n\u003Cp\u003ESince beginning the exploration of graphene in 2001, de Heer and his research team have made continuous improvements in the quality of the material they produce, and those improvements have allowed them to demonstrate a number of physical properties -- such as the Quantum Hall Effect -- that verify the unique properties of the material.\n\u003C\/p\u003E\n\u003Cp\u003E\u0022The properties that we see in our epitaxial graphene are similar to what we have calculated for an ideal theoretical sheet of graphene suspended in the air,\u0022 said Claire Berger, a research scientist in the Georgia Tech School of Physics who also has a faculty appointment at the Centre National de la Recherche Scientifique in France. \u0022We see these properties in the electron transport and we see these properties in all kinds of spectroscopy. Everything that is supposed to be occurring in a single sheet of graphene we are seeing in our systems.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003EKey to the material\u0027s future, of course, is the ability to make electronic devices that work consistently. The researchers believe they have almost reached that point. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022All of the properties that epitaxial graphene needs to make it viable for electronic devices have been proven in this material,\u0022 said Ed Conrad, a professor in Georgia Tech\u0027s School of Physics who is also a MRSEC member. \u0022We have shown that we can make macroscopic amounts of this material, and with the devices that are scalable, we have the groundwork that could really make graphene take off.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003EReaching higher and higher device density is also important, along with the ability to control the number of layers of graphene produced. The group has demonstrated that in their multilayer graphene, each layer retains the desired properties. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022Multilayer graphene has different stacking than graphite, the material found in pencils,\u0022 Conrad noted. \u0022In graphite, every layer is rotated 60 degrees and that\u0027s the only way that nature can do it. When we grow graphene on silicon carbide, the layers are rotated 30 degrees. When that happens, the symmetry of the system changes to make the material behave the way we want it to.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003E\u003Cstrong\u003EEpitaxial Versus Exfoliated\u003C\/strong\u003E\n\u003C\/p\u003E\n\u003Cp\u003EMuch of the world\u0027s graphene research -- including work leading to the Nobel -- involved the study of exfoliated graphene: layers of the material removed from a block of graphite, originally with tape. While that technique produces high-quality graphene, it\u0027s not clear how that could be scaled up for industrial production. \n\u003C\/p\u003E\n\u003Cp\u003EWhile agreeing that the exfoliated material has produced useful information about graphene properties, de Heer dismisses it as \u0022a science project\u0022 unlikely to have industrial electronics application. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022Electronics companies are not interested in graphene flakes,\u0022 he said. \u0022They need industrial graphene, a material that can be scaled up for high-volume manufacturing. Industry is now getting more and more interested in what we are doing.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003EDe Heer says Georgia Tech\u0027s place in the new graphene world is to focus on electronic applications. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022We are not really trying to compete with these other groups,\u0022 he said. \u0022We are really trying to create a practical electronic material. To do that, we will have to do many things right, including fabricating a scalable material that can be made as large as a wafer. It will have to be uniform and able to be processed using industrial methods.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003E\u003Cstrong\u003EResolving Technical Issues\u003C\/strong\u003E \n\u003C\/p\u003E\n\u003Cp\u003EAmong the significant technical issues facing graphene devices has been electron scattering that occurs at the boundaries of nanoribbons. If the edges aren\u0027t perfectly smooth -- as usually happens when the material is cut with electron beams -- the roughness bounces electrons around, creating resistance and interference. \n\u003C\/p\u003E\n\u003Cp\u003ETo address that problem, de Heer and his team recently developed a new \u0022templated growth\u0022 technique for fabricating nanometer-scale graphene devices. The technique involves etching patterns into the silicon carbide surfaces on which epitaxial graphene is grown. The patterns serve as templates directing the growth of graphene structures, allowing the formation of nanoribbons of specific widths without the use of e-beams or other destructive cutting techniques. Graphene nanoribbons produced with these templates have smooth edges that avoid electron-scattering problems. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022Using this approach, we can make very narrow ribbons of interconnected graphene without the rough edges,\u0022 said de Heer. \u0022Anything that can be done to make small structures without having to cut them is going to be useful to the development of graphene electronics because if the edges are too rough, electrons passing through the ribbons scatter against the edges and reduce the desirable properties of graphene.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003EIn nanometer-scale graphene ribbons, quantum confinement makes the material behave as a semiconductor suitable for creation of electronic devices. But in ribbons a micron or so wide, the material acts as a conductor. Controlling the depth of the silicon carbide template allows the researchers to create these different structures simultaneously, using the same growth process. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022The same material can be either a conductor or a semiconductor depending on its shape,\u0022 noted de Heer. \u0022One of the major advantages of graphene electronics is to make the device leads and the semiconducting ribbons from the same material. That\u0027s important to avoid electrical resistance that builds up at junctions between different materials.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003EAfter formation of the nanoribbons, the researchers apply a dielectric material and metal gate to construct field-effect transistors. While successful fabrication of high-quality transistors demonstrates graphene\u0027s viability as an electronic material, de Heer sees them as only the first step in what could be done with the material. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022When we manage to make devices well on the nanoscale, we can then move on to make much smaller and finer structures that will go beyond conventional transistors to open up the possibility for more sophisticated devices that use electrons more like light than particles,\u0022 he said. \u0022If we can factor quantum mechanical features into electronics, that is going to open up a lot of new possibilities.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003E\u003Cstrong\u003ECollaborations with Other Groups\u003C\/strong\u003E \n\u003C\/p\u003E\n\u003Cp\u003EBefore engineers can use epitaxial graphene for the next generation of electronic devices, they will have to understand its unique properties. As part of that process, Georgia Tech researchers are collaborating with scientists at the National Institute of Standards and Technology (NIST). The collaboration has produced new insights into how electrons behave in graphene. \n\u003C\/p\u003E\n\u003Cp\u003EIn a recent paper published in the journal \u003Cem\u003ENature Physics\u003C\/em\u003E, the Georgia Tech-NIST team described for the first time how the orbits of electrons are distributed spatially by magnetic fields applied to layers of epitaxial graphene. They also found that these electron orbits can interact with the substrate on which the graphene is grown, creating energy gaps that affect how electron waves move through the multilayer material. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022The regular pattern of magnetically-induced energy gaps in the graphene surface creates regions where electron transport is not allowed,\u0022 said Phillip N. First, a professor in the Georgia Tech School of Physics and MRSEC member. \u0022Electron waves would have to go around these regions, requiring new patterns of electron wave interference. Understanding this interference would be important for some bi-layer graphene devices that have been proposed.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003EEarlier NIST collaborations led to improved understanding of graphene electron states, and the way in which low temperature and high magnetic fields can affect energy levels. The researchers also demonstrated that atomic-scale moir\u00e9 patterns, an interference pattern that appears when two or more graphene layers are overlaid, can be used to measure how sheets of graphene are stacked. \n\u003C\/p\u003E\n\u003Cp\u003EIn a collaboration with the U.S. Naval Research Laboratory and University of Illinois at Urbana-Champaign, a group of Georgia Tech professors developed a simple and quick one-step process for creating nanowires on graphene oxide. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022We\u0027ve shown that by locally heating insulating graphene oxide, both the flakes and the epitaxial varieties, with an atomic force microscope tip, we can write nanowires with dimensions down to 12 nanometers,\u0022 said Elisa Riedo, an associate professor in the Georgia Tech School of Physics and a MRSEC member. \u0022And we can tune their electronic properties to be up to four orders of magnitude more conductive.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003E\u003Cstrong\u003EA New Industrial Revolution?\u003C\/strong\u003E \n\u003C\/p\u003E\n\u003Cp\u003EThough graphene can be grown and fabricated using processes similar to those of silicon, it is not easily compatible with silicon. That means companies adopting it will also have to build new fabrication facilities -- an expensive investment. Consequently, de Heer believes industry will be cautious about moving into a new graphene world. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022Silicon technology is completely entrenched and well developed,\u0022 he admitted. \u0022We can adopt many of the processes of silicon, but we can\u0027t easily integrate ourselves into silicon. Because of that, we really need a major paradigm shift. But for the massive electronics industry, that will not happen easily or gently.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003EHe draws an analogy to steamships and passenger trains at the dawn of the aviation age. At some point, it became apparent that airliners were going to replace both ocean liners and trains in providing first-class passenger service. Though the cost of air travel was higher, passengers were willing to pay a premium for greater speed. \n\u003C\/p\u003E\n\u003Cp\u003E\u0022We are going to see a coexistence of technologies for a while, and how the hybridization of graphene and silicon electronics is going to happen remains up in the air,\u0022 de Heer predicted. \u0022That is going to take decades, though in the next ten years we are probably going to see real commercial devices that involve graphene.\u0022 \n\u003C\/p\u003E\n\u003Cp\u003E\u003Cem\u003E\u003Cstrong\u003EThis article originally appeared in Research Horizons, Georgia Tech\u0027s research magazine.\u003C\/strong\u003E\u003C\/em\u003E\u003Cstrong\u003E\u003C\/strong\u003E\n\u003C\/p\u003E\n\u003Cp\u003E\u003Cstrong\u003EResearch News \u0026amp; Publications Office\u003Cbr \/\u003E\nGeorgia Institute of Technology\u003Cbr \/\u003E\n75 Fifth Street, N.W., Suite 314\u003Cbr \/\u003E\nAtlanta, Georgia  30308  USA\n\u003C\/strong\u003E\u003C\/p\u003E\n\u003Cp\u003E\u003Cstrong\u003EMedia Relations Contacts\u003C\/strong\u003E: John Toon (404-894-6986)(\u003Ca href=\u0022mailto:jtoon@gatech.edu\u0022\u003Ejtoon@gatech.edu\u003C\/a\u003E) or Abby Vogel Robinson (404-385-3364)(\u003Ca href=\u0022mailto:abby@innovate.gatech.edu\u0022\u003Eabby@innovate.gatech.edu\u003C\/a\u003E).\n\u003C\/p\u003E\n\u003Cp\u003E\u003Cstrong\u003EWriter\u003C\/strong\u003E: John Toon\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EGeorgia Tech has become a leader in developing epitaxial graphene, a material that can be grown on large wafers and patterned for use in electronics manufacturing. In a recent paper, Georgia Tech researchers reported fabricating an array of 10,000 top-gated transistors on a 0.24 square centimeter chip.\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"Georgia Tech has become a world leader in epitaxial graphene."}],"uid":"27303","created_gmt":"2011-01-06 01:00:00","changed_gmt":"2016-10-08 03:07:57","author":"John Toon","boilerplate_text":"","field_publication":"","field_article_url":"","dateline":{"date":"2011-01-06T00:00:00-05:00","iso_date":"2011-01-06T00:00:00-05:00","tz":"America\/New_York"},"extras":[],"hg_media":{"63410":{"id":"63410","type":"image","title":"Producing epitaxial graphene","body":null,"created":"1449176690","gmt_created":"2015-12-03 21:04:50","changed":"1475894557","gmt_changed":"2016-10-08 02:42:37","alt":"Producing epitaxial graphene","file":{"fid":"191816","name":"tbs48688.jpg","image_path":"\/sites\/default\/files\/images\/tbs48688_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/tbs48688_0.jpg","mime":"image\/jpeg","size":1202030,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/tbs48688_0.jpg?itok=V_zWpccS"}},"63411":{"id":"63411","type":"image","title":"Professor Walt de Heer","body":null,"created":"1449176690","gmt_created":"2015-12-03 21:04:50","changed":"1475894557","gmt_changed":"2016-10-08 02:42:37","alt":"Professor Walt de Heer","file":{"fid":"191817","name":"tic48688.jpg","image_path":"\/sites\/default\/files\/images\/tic48688_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/tic48688_0.jpg","mime":"image\/jpeg","size":1245665,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/tic48688_0.jpg?itok=ZOUqWETF"}},"63412":{"id":"63412","type":"image","title":"Researcher Claire Berger","body":null,"created":"1449176690","gmt_created":"2015-12-03 21:04:50","changed":"1475894557","gmt_changed":"2016-10-08 02:42:37","alt":"Researcher Claire Berger","file":{"fid":"191818","name":"tcs48688.jpg","image_path":"\/sites\/default\/files\/images\/tcs48688_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/tcs48688_0.jpg","mime":"image\/jpeg","size":1118539,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/tcs48688_0.jpg?itok=26pfw7Do"}}},"media_ids":["63410","63411","63412"],"related_links":[{"url":"http:\/\/www.mrsec.gatech.edu\/","title":"Materials Research Science and Engineering Center"},{"url":"http:\/\/www.physics.gatech.edu\/","title":"Georgia Tech School of Physics"},{"url":"https:\/\/www.physics.gatech.edu\/user\/walter-de-heer","title":"Walt de Heer"}],"groups":[{"id":"1188","name":"Research Horizons"}],"categories":[{"id":"153","name":"Computer Science\/Information Technology and Security"},{"id":"145","name":"Engineering"},{"id":"149","name":"Nanotechnology and Nanoscience"},{"id":"135","name":"Research"},{"id":"150","name":"Physics and Physical Sciences"}],"keywords":[{"id":"9826","name":"de Heer"},{"id":"9116","name":"epitaxial graphene"},{"id":"429","name":"graphene"},{"id":"9115","name":"MRSEC"},{"id":"960","name":"physics"}],"core_research_areas":[],"news_room_topics":[],"event_categories":[],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003E\u003Cstrong\u003EJohn Toon\u003C\/strong\u003E\u003Cbr \/\u003EResearch News \u0026amp; Publications Office\u003Cbr \/\u003E\u003Ca href=\u0022http:\/\/www.gatech.edu\/contact\/index.html?id=jt7\u0022\u003EContact John Toon\u003C\/a\u003E\u003Cbr \/\u003E\u003Cstrong\u003E404-894-6986\u003C\/strong\u003E\u003C\/p\u003E","format":"limited_html"}],"email":["jtoon@gatech.edu"],"slides":[],"orientation":[],"userdata":""}},"62337":{"#nid":"62337","#data":{"type":"event","title":"MRSEC Seminar Series: Dr. Harald Brune","body":[{"value":"\u003Cp align=\u0022left\u0022\u003EThe Georgia Tech Materials Science and Engineering Center (MRSEC) welcomes Dr. Harald Brune, a professor at the Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne, on \u0022Band Gap Engineering and Real Space Structure of Graphene Mono- and Bilayers on Metal Surfaces.\u0022\u003C\/p\u003E\u003Cp align=\u0022left\u0022\u003E\u003Cstrong\u003EAbstract:\u003C\/strong\u003E\u003Cbr \/\u003EGraphene forms moir\u00e9 structures on lattice mismatched close-packed metal surfaces. These structures involve periodic transitions between three stacking areas. Graphene is most loosely bound in the one where the C-rings are centered on metal atoms and therefore these stacking areas are expected to exhibit an electronic structure coming close to the one of free standing graphene. Indeed sharp linear bands forming Dirac cones have been observed for g-monolayers on Ir(111), but hitherto not on Ru(0001), where only the second layer displayed the characteristic electronic structure of graphene.\u0026nbsp; We present angle-resolved photoelectron spectroscopy (ARPES) and scanning tunneling microscopy (STM) results on the electronic and real-space structure of graphene mono- and bilayers on Ru(0001) and of graphene monolayers on Ir(111). We find that long-range ordered graphene monolayers on Ru(0001) display sharp Dirac cones. The lateral positions of the C-ring centers in the first monolayer\u0026nbsp;show strong distortions from a hexagonal lattice. Therefore the moir\u00e9 structure is not the beating of two laterally rigid hexagonal lattices, instead, graphene optimizes its binding to the substrate by strongly adapting the C-C distances. The moir\u00e9 of g\/Ir(111) gives rise to six-fold symmetric replica around the K-point. A super-lattice of Ir islands grown on-top introduces a strongly increases the amplitude of the periodic electron potential leading to three-fold symmetry, a band gap opening and to strongly asymmetric group velocities. In the case of Ru, very similar growth temperatures and identical ethylene dosage give rise to strongly different g coverage and long-range order such that these samples are best assessed by the presented combination of morphology and electronic structure characterization.\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp align=\u0022left\u0022\u003EThe Georgia Tech Materials Science and Engineering Center (MRSEC) welcomes Dr. Harald Brune, a professor at the Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne, on \u0022Band Gap Engineering and Real Space Structure of Graphene Mono- and Bilayers on Metal Surfaces.\u0022\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"Harald Brune to speak at 3pm in Nanotechnology Building about graphene."}],"uid":"27428","created_gmt":"2010-10-25 12:08:45","changed_gmt":"2016-10-08 01:53:16","author":"Gina Adams","boilerplate_text":"","field_publication":"","field_article_url":"","field_event_time":{"event_time_start":"2010-11-15T13:30:00-05:00","event_time_end":"2010-11-15T15:00:00-05:00","event_time_end_last":"2010-11-15T15:00:00-05:00","gmt_time_start":"2010-11-15 18:30:00","gmt_time_end":"2010-11-15 20:00:00","gmt_time_end_last":"2010-11-15 20:00:00","rrule":null,"timezone":"America\/New_York"},"extras":["free_food"],"related_links":[{"url":"http:\/\/www.mrsec.gatech.edu\/","title":"Materials Research Science and Engineering Center"}],"groups":[{"id":"60783","name":"MRSEC"}],"categories":[],"keywords":[{"id":"9116","name":"epitaxial graphene"},{"id":"429","name":"graphene"},{"id":"107","name":"Nanotechnology"},{"id":"960","name":"physics"}],"core_research_areas":[],"news_room_topics":[],"event_categories":[{"id":"1795","name":"Seminar\/Lecture\/Colloquium"}],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003E\u003Ca href=\u0022mailto:gina.adams@chbe.gatech.edu\u0022\u003EGina Adams\u003C\/a\u003E\u003Cbr \/\u003EMRSEC Program Manager\u003Cbr \/\u003E404-385-0327\u003C\/p\u003E","format":"limited_html"}],"email":[],"slides":[],"orientation":[],"userdata":""}},"61500":{"#nid":"61500","#data":{"type":"event","title":"Graphene Journal Club - Oct 29 - 1pm","body":[{"value":"\u003Cp\u003E\u003Cstrong\u003E\u003Cp align=\u0022left\u0022\u003EHere we report a technique for transferring graphene layers, one by one, from a multilayer deposit formed by epitaxial growth on the Si-terminated face of a 6H-SiC substrate. The procedure uses a bilayer film of palladium\/polyimide deposited onto the graphene coated SiC, which is then mechanically peeled away and placed on a target substrate. Orthogonal etching of the palladium and polyimide leaves isolated sheets of graphene with sizes of square centimeters. Repeating these steps transfers additional sheets from the same SiC substrate.\u003C\/p\u003E\u003Cp align=\u0022left\u0022\u003ERaman spectroscopy, scanning tunneling spectroscopy, low-energy electron diffraction and X-ray photoelectron spectroscopy, together with scanning tunneling, atomic force, optical, and scanning electron microscopy reveal key properties of the materials. The sheet resistances determined from measurements of four point probe devices were found to be configurations demonstrate the versatility of the procedures.\u003C\/p\u003E\u003C\/strong\u003E\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":"","field_summary_sentence":[{"value":"Transfer of graphene grown on SiC to other substrates"}],"uid":"27428","created_gmt":"2010-10-06 14:41:14","changed_gmt":"2016-10-08 01:52:31","author":"Gina Adams","boilerplate_text":"","field_publication":"","field_article_url":"","field_event_time":{"event_time_start":"2010-10-29T13:00:00-04:00","event_time_end":"2010-10-29T15:00:00-04:00","event_time_end_last":"2010-10-29T15:00:00-04:00","gmt_time_start":"2010-10-29 17:00:00","gmt_time_end":"2010-10-29 19:00:00","gmt_time_end_last":"2010-10-29 19:00:00","rrule":null,"timezone":"America\/New_York"},"extras":[],"groups":[{"id":"60783","name":"MRSEC"}],"categories":[],"keywords":[{"id":"9116","name":"epitaxial graphene"},{"id":"429","name":"graphene"},{"id":"11034","name":"MRSEC Journal Club"}],"core_research_areas":[],"news_room_topics":[],"event_categories":[{"id":"1791","name":"Student sponsored"}],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[],"email":[],"slides":[],"orientation":[],"userdata":""}},"60784":{"#nid":"60784","#data":{"type":"event","title":"Epitaxial Graphene Symposium","body":[{"value":"\u003Cp\u003EThe workshop will cover the gamut of epitaxial graphene on silicon \ncarbide topics.\u0026nbsp; More information and application forms can be found at \u003Ca title=\u0022Epitaxial Graphene Symposium Registration\u0022 href=\u0022http:\/\/www.steg2.gatech.edu\/\u0022 target=\u0022_self\u0022\u003Ewww.steg2.gatech.edu\u003C\/a\u003E.\u003C\/p\u003E\n\u003Cp\u003E2nd International Symposium on the Science and Technology of Epitaxial Graphene (STEG 2)\u003C\/p\u003E\n\u003Ch4\u003EWhen: September 14 - 17, 2010\u003C\/h4\u003E\n\u003Ch4\u003EWhere: Amelia Island, Florida\u003C\/h4\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EThe workshop will cover the gamut of epitaxial graphene on silicon \ncarbide topics.\u0026nbsp; More information and application forms can be found at \u003Ca title=\u0022Epitaxial Graphene Symposium Registration\u0022 href=\u0022http:\/\/www.steg2.gatech.edu\/\u0022 target=\u0022_self\u0022\u003Ewww.steg2.gatech.edu\u003C\/a\u003E.\u003C\/p\u003E\n\u003Cp\u003E2nd International Symposium on the Science and Technology of Epitaxial Graphene (STEG 2)\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"2nd International Symposium on the Science and Technology of Epitaxial Graphene"}],"uid":"27387","created_gmt":"2010-09-03 09:19:44","changed_gmt":"2016-10-08 01:52:15","author":"Brian Danin","boilerplate_text":"","field_publication":"","field_article_url":"","field_event_time":{"event_time_start":"2010-09-14T01:00:00-04:00","event_time_end":"2010-09-17T01:00:00-04:00","event_time_end_last":"2010-09-17T01:00:00-04:00","gmt_time_start":"2010-09-14 05:00:00","gmt_time_end":"2010-09-17 05:00:00","gmt_time_end_last":"2010-09-17 05:00:00","rrule":null,"timezone":"America\/New_York"},"extras":[],"hg_media":{"60373":{"id":"60373","type":"image","title":"Moire alignment of graphene","body":null,"created":"1449176267","gmt_created":"2015-12-03 20:57:47","changed":"1475894523","gmt_changed":"2016-10-08 02:42:03","alt":"Moire alignment of graphene","file":{"fid":"191110","name":"tpx85581.jpg","image_path":"\/sites\/default\/files\/images\/tpx85581_0.jpg","image_full_path":"http:\/\/www.tlwarc.hg.gatech.edu\/\/sites\/default\/files\/images\/tpx85581_0.jpg","mime":"image\/jpeg","size":953599,"path_740":"http:\/\/www.tlwarc.hg.gatech.edu\/sites\/default\/files\/styles\/740xx_scale\/public\/images\/tpx85581_0.jpg?itok=4b2fa4es"}}},"media_ids":["60373"],"groups":[{"id":"60783","name":"MRSEC"}],"categories":[],"keywords":[{"id":"9116","name":"epitaxial graphene"},{"id":"429","name":"graphene"},{"id":"9115","name":"MRSEC"}],"core_research_areas":[],"news_room_topics":[],"event_categories":[{"id":"1789","name":"Conference\/Symposium"}],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EPlease contact Gina, by \u003Ca href=\u0022mailto:steg2@physics.gatech.edu\u0022\u003Eemail\u003C\/a\u003E or phone at +1 (404) 385-0327.\u003C\/p\u003E","format":"limited_html"}],"email":[],"slides":[],"orientation":[],"userdata":""}},"55281":{"#nid":"55281","#data":{"type":"event","title":"Nano@Tech with Dr. Dennis Hess","body":[{"value":"\u003Cp\u003ENano@Tech welcomes Dr. Dennis Hess, director of GT MRSEC and professor in the School of Chemical and Biomolecular Engineering, on \u0022The GT MRSEC on New Electronic Materials:  Research, Education and Outreach.\u0022\u003C\/p\u003E\u003Cp\u003E\u003Cstrong\u003EAbstract:\n\u003C\/strong\u003E\u003Cbr \/\u003EThe Georgia Tech Materials Research Science and Engineering Center (MRSEC) was established by NSF in September 2008.  This Center is funded for 6 years and is a cross-disciplinary effort involving GT as well as The University of California Berkeley, The University of California Riverside, Alabama A\u0026amp;M, and The University of Michigan.  Initially, the Center focus is on graphene, a material with the requisite properties and potential to serve as the successor to silicon in ICs, sensors, and MEMS devices.  Although research is a major effort of Center activity, substantial efforts are in place for education and outreach.  This presentation will describe the organization of the GT MRSEC, the breadth of research that has been undertaken, the educational activities underway and planned, including a Partnership for Research and Education in Materials (PREM) with The Atlanta University Center (Clark Atlanta, Morehouse and Spelman Universities), and the outreach programs.  Future plans and goals will be described.\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003EDr. Dennis Hess, director of GT MRSEC and professor in the School of Chemical and Biomolecular Engineering, on \u0022The GT MRSEC on New Electronic Materials: Research, Education and Outreach.\u0022\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"\u0022The GT MRSEC on New Electronic Materials: Research, Education and Outreach\u0022"}],"uid":"27299","created_gmt":"2010-04-07 12:10:39","changed_gmt":"2016-10-08 01:51:13","author":"Michael Hagearty","boilerplate_text":"","field_publication":"","field_article_url":"","field_event_time":{"event_time_start":"2010-04-13T13:00:00-04:00","event_time_end":"2010-04-13T14:30:00-04:00","event_time_end_last":"2010-04-13T14:30:00-04:00","gmt_time_start":"2010-04-13 17:00:00","gmt_time_end":"2010-04-13 18:30:00","gmt_time_end_last":"2010-04-13 18:30:00","rrule":null,"timezone":"America\/New_York"},"extras":["free_food"],"related_links":[{"url":"http:\/\/www.chbe.gatech.edu\/fac_staff\/faculty\/hess.php","title":"Dennis Hess"},{"url":"http:\/\/www.mrsec.gatech.edu\/","title":"Materials Research Science and Engineering Center"}],"groups":[{"id":"1182","name":"General"}],"categories":[],"keywords":[{"id":"9116","name":"epitaxial graphene"},{"id":"9115","name":"MRSEC"},{"id":"4315","name":"nano@tech"},{"id":"1785","name":"nanomaterials"},{"id":"2179","name":"outreach"},{"id":"365","name":"Research"},{"id":"167355","name":"silicon"}],"core_research_areas":[],"news_room_topics":[],"event_categories":[{"id":"1795","name":"Seminar\/Lecture\/Colloquium"}],"invited_audience":[],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003E\u003Ca href=\u0022mailto:katie.hutchison@mirc.gatech.edu\u0022\u003EKatie Hutchinson\u003C\/a\u003E\u003Cbr \/\u003E\u0026nbsp;404-385-0814\u003C\/p\u003E","format":"limited_html"}],"email":[],"slides":[],"orientation":[],"userdata":""}}}