632049news15807576511580757651<![CDATA[Georgia Tech Researchers and Partners in France Publish Article in Advanced Materials Technology on HI]]>
Abdallah Ougazzaden and co-authors, Taha Ayari, Suresh Sundaram, Chris Bishop, Adama Mballo, Phuong Vuong, Yacine Halfaya, Soufiane Karrrakchou, Simon Gautier, Paul Voss, and Jean Paul Salvestrini published an article entitled, “Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications,” in the journal, Advanced Materials Technologies (Adv. Mater. Technol. 10/2019). Researchers from Georgia Tech-Lorraine, GT-CNRS UMI 2958, and Insitut Lafayette collaborated on the paper. The authors acknowledge the French National Research Agency (ANR) under the GANEX Laboratory of Excellence (Labex) project for partially funding this study.
Advanced Materials Technologies is an international peer-reviewed journal that focuses on advanced engineering and device design aspects of materials systems for application in energy, healthcare, electronics, optics, microfluidics, food safety, sensors/biosensors, and environmental technology.
In article number 1900164 the team describes how III-Nitride based LEDs have been locally grown on h-BN and fabricated at a wafer-scale. This enables a simple, dicing-free, pick-and-place of the devices on a flexible substrate without performance degradation. The approach presented in the article is scalable on any wafer size, can be applied to other types of nitride-based devices, and can be compatible with commercial pick-and-place handlers for mass production.
With trends of technology disruption and acceleration in the electronics industry, the role of heterogeneous integration will prove important in emerging fields such as IoT, smart mobile, and intelligent automotive.