Abstract:

An overview of some recent results obtained III-V Lab, a common Laboratory between Thales, Alcatel-Lucent and CEA-LETI, using emerging AlGaN/GaN HEMT technology. This technology is very suitable up to Ku-Band and offer impressive power performances. The second part of the presentation offers a vision of results obtained using new InAlN/GaN heterostructures, which is expected to offer similar output power but with improved efficiencies and to cope with higher working frequencies.