<![CDATA[Designing correlated & topological states in semiconductor moiré]]>

672352 event 1705947271 1705948977 <![CDATA[Designing correlated & topological states in semiconductor moiré]]> Research Areas

My research interest lies in understanding the topological states, quantum transport, and light-matter interaction in topological/strongly correlated materials and their potential applications for future quantum technology. I have worked in the areas of antiferromagnetic spintronics, nonlinear optics, moiré semiconductor, transport in Hubbard model system, material informatics, and machine learning. My research tools combine analytical methods with various numerical techniques for ground state and response properties, including density functional theory (with a focus on wannierization and response simulation), exact diagonalization, density-matrix renormalization group, and variational Monte Carlo. I am also greatly interested in high performance computing, for the study of large-scale quantum systems with massive parallelization in CPU/GPU platforms.

]]> Designing correlated & topological states in semiconductor moiré

Transition metal dichalcogenide (TMD) based moiré materials have been shown to host various correlated electronic phenomena including Mott insulating states and fractional filling charge orders, quantum spin Hall effects, and (fractional) quantum anomalous Hall effects. To describe the low-energy states of long-wavelength moiré superlattice, we introduced the concept of moiré quantum chemistry, and developed transfer learning based large-scale first principle methods. In twisted bilayer TMD, we proposed the Mott ferroelectricity, kinetic magnetism and pseudogap metal from spin polarons. The pseudogap metal phase emerges at small doping below half filling and an intermediate range of fields, which exhibits a single-particle gap and a doping-dependent magnetization plateau.

I will also discuss the fractional quantum anomalous Hall effect in twisted homobilayer and its competing states. This series of works reveal the rich physics of semiconductor moiré superlattices as manifested in a variety of correlated and topological states.

]]> 672834 image <![CDATA[Photo.png]]> Transition metal dichalcogenide (TMD) based moiré materials have been shown to host various correlated electronic phenomena including Mott insulating states and fractional filling charge orders, quantum spin Hall effects, and (fractional) quantum anomalous Hall effects. To describe the low-energy states of long-wavelength moiré superlattice, we introduced the concept of moiré quantum chemistry, and developed transfer learning based large-scale first principle methods. In twisted bilayer TMD, we proposed the Mott ferroelectricity, kinetic magnetism and pseudogap metal from spin polarons. The pseudogap metal phase emerges at small doping below half filling and an intermediate range of fields, which exhibits a single-particle gap and a doping-dependent magnetization plateau.

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